SKM400GAR12E4
© by SEMIKRON Rev. 2 – 16.06.2009 1
SEMITRANS®3
GAR
IGBT4 Modules
SKM400GAR12E4
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x ICNOM
• Soft switching 4. Generation CAL
diode (CAL4)
Typical Applications
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
• DC – motor
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
VCES 1200 V
ICTj= 175 °C Tc=25°C 618 A
Tc=80°C 475 A
ICnom 400 A
ICRM ICRM = 3xICnom 1200 A
VGES -20 ... 20 V
tpsc
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj= 150 °C 10 µs
Tj-40 ... 175 °C
Inverse diode
IFTj= 175 °C Tc=25°C 440 A
Tc=80°C 329 A
IFnom 400 A
IFRM IFRM = 3xIFnom 1200 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 1980 A
Tj-40 ... 175 °C
Freewheeling diode
IFTj= 175 °C Tc=25°C 440 A
Tc=80°C 329 A
IFnom 400 A
IFRM IFRM = 3xIFnom 1200 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 1980 A
Tj-40 ... 175 °C
Module
It(RMS) 500 A
Tstg -40 ... 125 °C
Visol AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat) IC=400A
VGE =15V
chiplevel
Tj=25°C 1.8 2.05 V
Tj= 150 °C 2.2 2.4 V
VCE0 Tj=25°C 0.8 0.9 V
Tj= 150 °C 0.7 0.8 V
rCE VGE =15V Tj=25°C 2.5 2.9 mΩ
Tj= 150 °C 3.8 4.0 mΩ
VGE(th) VGE=VCE, IC= 15.2 mA 5 5.8 6.5 V
ICES VGE =0V
VCE = 1200 V
Tj=25°C 0.1 0.3 mA
Tj= 150 °C mA
Cies VCE =25V
VGE =0V
f=1MHz 24.6 nF
Coes f=1MHz 1.62 nF
Cres f=1MHz 1.38 nF
QGVGE =- 8 V...+ 15 V 2260 nC
RGint Tj=25°C 1.9 Ω
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