27
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466) Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SA1693
–80
–80
–6
–6
–3
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■Typical Switching Characteristics (Common Emitter)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SA1693
–10max
–10max
–80min
50min∗
–1.5max
20typ
150typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
VCB=–80V
VEB=–6V
IC=–50mA
VCE=–4V, IC=–2A
IC=–2A, IB=–0.2A
VCE=–12V, IE=0.5A
VCB=–10V, f=1MHz
VCC
(V)
–30
RL
(Ω)
10
IC
(A)
–3
VBB2
(V)
5
IB2
(A)
0.3
ton
(
µ
s)
0.18typ
tstg
(
µ
s)
1.10typ
tf
(
µ
s)
0.21typ
IB1
(A)
–0.3
2SA1693
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
Safe Operating Area (Single Pulse)
hFE–IC
Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0
0
–2
–4
–6
–1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–200mA
–150mA
–100mA
–80mA
–50mA
–30mA
–20mA
I
B
=–10mA
0
–3
–2
–1
0 –0.5 –1.0 –1.5
Base Current IB(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=–6A
–4A
–2A
–0.02 –0.1 –0.5 –1 –5–6
30
50
100
300
Collector Current IC(A)
DC Current Gain hFE
(VCE=–4V)
Typ
–5 –10 –100–50
–0.1
–1
–0.5
–10
–20
–5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
DC
10ms
100ms
0.02 0.10.05 0.5 1 5 6
0
20
10
30
Cut-off Frequency fT(MHZ)
(VCE=–12V)
Emitter Current IE(A)
Typ
fT–IE Characteristics
(Typical)
60
40
20
3.5
00 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
0
–6
–4
–2
0–2–1
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
(VCE=–4V)
–0.02 –0.1 –0.5 –1 –5 –6
30
50
100
300
DC Current Gain hFE
125˚C
25˚C
–30˚C
Collector Current IC(A)
θj-a–t Characteristics
0.3
1
5
0.5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
Without Heatsink
Natural Cooling
VBB1
(V)
–10
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9±0.3
4.0 2.0
5.0±0.2
1.8
ø3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1 5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
∗hFE Rank O(50to100), P(70to140), Y(90to180)
■
Electrical Characteristics
