DSS20200L 20V PNP LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data * BVCEO > -20V * * IC = -2A Continuous Collector Current * * ICM = -4A Peak Pulse Current Case: SOT23 Case Material: molded plastic, "Green" molding compound UL Flammability Classification Rating 94V-0 * Low Saturation Voltage VCE(sat) < -120mV @ -1A * * RCE(SAT) = 40m for a low equivalent on-resistance * * Complimentary NPN Type : DSS20201L * Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) * Halogen and Antimony Free. "Green" Device (Note 3) * Qualified to AEC-Q101 Standards for High Reliability Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 * SOT23 Weight: 0.008 grams (approximate) E C C B B E Top View Device Symbol Top View Pin-Out Ordering Information (Note 4) Product DSS20200L-7 DSS20200L-13 Notes: Marking ZP1 ZP1 Reel size (inches) 7 13 Tape width (mm) 8 8 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. ZP1 Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 DSS20200L Document number: DS31604 Rev. 3 - 2 Mar 3 YM Marking Information 2010 X Apr 4 ZP1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September) 2011 Y May 5 Jun 6 1 of 7 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D November 2013 (c) Diodes Incorporated DSS20200L Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -7 V Peak Pulse Collector Current ICM -4 A Continuous Collector Current IC -2 A Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Symbol (Note 5) (Note 6) (Note 5) (Note 6) PD RJA (Note 7) Value Unit 600 1.2 209 104 RJL 75 TJ, TSTG -55 to +150 mW C/W C ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as note (5), except mounted on 25mm x 25mm 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. DSS20200L Document number: DS31604 Rev. 3 - 2 2 of 7 www.diodes.com November 2013 (c) Diodes Incorporated DSS20200L Thermal Characteristics and Derating information 10 1.6 -IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) 1.4 1.2 1.0 (Note 4) 0.8 0.6 (Note 3) 0.4 Pw = 10ms 1 Pw = 100ms 0.1 DC 0.01 0.2 0 0.001 0.1 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Figure 1 Power Dissipation vs. Ambient Temperature 0 1 10 100 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 2 Typical Collector Current vs. Collector-Emitter Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.9 RJA(t) = r(t) * RJA RJA = 166C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - T A = P * RJA(t) Duty Cycle, D = t1 /t2 D = Single Pulse 0.001 0.00001 DSS20200L Document number: DS31604 Rev. 3 - 2 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Figure 3 Transient Thermal Response 3 of 7 www.diodes.com 10 100 1,000 November 2013 (c) Diodes Incorporated DSS20200L Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Symbol Min Typ Max Unit Test Conditions BVCBO -20 V Collector-Emitter Breakdown Voltage (Note 9) BVCEO -20 V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 V IE = -100A Collector-Base Cutoff Current ICBO -100 Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 9) IEBO -100 250 250 180 150 -13 -50 -90 -100 -120 -80 -180 40 90 DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(SAT) nA nA IC = -100A VCB = -20V, IE = 0 VEB = -7V, IC = 0 VCE = -2V, IC = -10mA VCE = -2V, IC = -500mA VCE = -2V, IC = -1A VCE = -2V, IC = -2A IC = -0.1A, IB = -10mA mV IC = -1A, IB = -100mA IC = -1A, IB = -10mA IC = -2A, IB = -200mA Equivalent On-Resistance RCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Base-Emitter Turn-on Voltage SMALL SIGNAL CHARACTERISTICS VBE(ON) Transition Frequency fT 100 Output Capacitance Cobo 100 pF VCB = -3V, f = 1MHz Input Capacitance SWITCHING CHARACTERISTICS Turn-On Time Cibo 330 pF VEB = -0.5V, f = 1MHz -0.9 m V IC = -1A, IB = -10mA -0.9 V VCE = -2V, IC = -1A MHz ton 180 ns td 60 ns Rise Time tr 120 ns Turn-Off Time toff 430 ns Storage Time ts 300 ns Fall Time tf 130 ns Delay Time Note: IC = -2A, IB = -200mA VCE = -5V, IC = -100mA, f = 100MHz VCC = -15V, IC = -750mA, IB1 = -15mA VCC = -15V, IC = -750mA, IB1 = IB2 = -15mA 9. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2% Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) 2.0 1,000 T A = 150C 1.6 hFE, DC CURRENT GAIN -IC, COLLECTOR CURRENT (A) 1.8 IB = -5mA 1.4 1.2 IB = -4mA 1.0 IB = -3mA 0.8 IB = -2mA 0.6 T A = 85C T A = 25C T A = -55C 100 VCE = -2V 0.4 IB = -1mA 0.2 0 0 2 4 6 8 10 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 4 Typical Collector Current vs. Collector-Emitter Voltage DSS20200L Document number: DS31604 Rev. 3 - 2 4 of 7 www.diodes.com 10 0.1 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Figure 5 Typical DC Current Gain vs. Collector Current November 2013 (c) Diodes Incorporated 1 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.1 T A = 150C T A = 85C TA = 25C 0.01 TA = -55C 0.001 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Figure 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 1.2 VCE = -2V 1.0 0.8 TA = -55C 0.6 TA = 25C 0.4 T A = 85C T A = 150C 0.2 0 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Figure 7 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1,000 IC/IB = 10 f = 1MHz 1.0 CAPACITANCE (pF) -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) DSS20200L 0.8 TA = -55C 0.6 0.4 T A = 25C TA = 85C 100 Cibo Cobo 10 TA = 150C 0.2 0 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Figure 8 Typical Base-Emitter Saturation Voltage vs. Collector Current 1 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Figure 9 Typical Capacitance Characteristics fT, GAIN-BANDWIDTH PRODUCT (MHz) 1,000 100 10 VCE = -5V f = 100MHz 1 0 10 20 30 40 50 60 70 80 90 100 -IC, COLLECTOR CURRENT (mA) Figure 10 Typical Gain-Bandwidth Product vs. Collector Current DSS20200L Document number: DS31604 Rev. 3 - 2 5 of 7 www.diodes.com November 2013 (c) Diodes Incorporated DSS20200L Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A B C H K M K1 D F J L G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DSS20200L Document number: DS31604 Rev. 3 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E E 6 of 7 www.diodes.com November 2013 (c) Diodes Incorporated DSS20200L IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2013, Diodes Incorporated www.diodes.com DSS20200L Document number: DS31604 Rev. 3 - 2 7 of 7 www.diodes.com November 2013 (c) Diodes Incorporated