DSS20200L
Document number: DS31604 Rev. 3 - 2
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DSS20200L
20V PNP LOW SATURATION TRANSISTOR IN SOT23
Features
BVCEO > -20V
I
C = -2A Continuous Collector Current
I
CM = -4A Peak Pulse Current
Low Saturation Voltage VCE(sat) < -120mV @ -1A
R
CE(SAT) = 40m for a low equivalent on-resistance
Complimentary NPN Type : DSS20201L
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: molded plastic, “Green” molding compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DSS20200L-7 ZP1 7 8 3,000
DSS20200L-13 ZP1 13 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View
Pin-Out
Top View Device Symbol
C
E
B
C
E
B
ZP1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
ZP1
YM
DSS20200L
Document number: DS31604 Rev. 3 - 2
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DSS20200L
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -20 V
Collector-Emitter Voltage VCEO -20 V
Emitter-Base Voltage VEBO -7 V
Peak Pulse Collector Current ICM -4 A
Continuous Collector Current IC -2 A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 600 mW
(Note 6) 1.2
Thermal Resistance, Junction to Ambient Air (Note 5) RθJA 209
°C/W
(Note 6) 104
Thermal Resistance, Junction to Leads (Note 7) RθJL 75
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
ESD Ratings (Note 8)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still
air conditions whilst operating in a steady-state.
6. Same as note (5), except mounted on 25mm x 25mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DSS20200L
Document number: DS31604 Rev. 3 - 2
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DSS20200L
Thermal Characteristics and Derating information
0
0
P , POWER DISSIPATION (W)
D
T , AMBIENT TEMPERATURE ( C)
A
°
(Note 3)
Figure 1 Power Dissipation vs. Ambient Temperature
0.2
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
(Note 4)
0.1 1 10 100
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Figure 2 Typical Collector Current
vs. Collector-Emitter Voltage
0.001
0.01
0.1
1
10
-I ,
C
O
LLE
C
T
O
R
C
U
R
R
E
N
T
(A)
C
DC
Pw = 100ms
Pw = 10ms
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)
1
Figure 3 Transient Thermal Response
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 166°C/W
θ
θ
JA
JA
P(pk) t
1
t
2
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
DSS20200L
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO -20 V IC = -100µA
Collector-Emitter Breakdown Voltage (Note 9) BVCEO -20 V IC = -10mA
Emitter-Base Breakdown Voltage BVEBO -7 V IE = -100µA
Collector-Base Cutoff Current ICBO -100 nA VCB = -20V, IE = 0
Emitter-Base Cutoff Current IEBO -100 nA
VEB = -7V, IC = 0
ON CHARACTERISTICS (Note 9)
DC Current Gain hFE
250
VCE = -2V, IC = -10mA
250 V
CE = -2V, IC = -500mA
180 VCE = -2V, IC = -1A
150 V
CE = -2V, IC = -2A
Collector-Emitter Saturation Voltage VCE(SAT)
-13
mV
IC = -0.1A, IB = -10mA
-50 -90 IC = -1A, IB = -100mA
-100 -120 IC = -1A, IB = -10mA
-80 -180 IC = -2A, IB = -200mA
Equivalent On-Resistance RCE(SAT) 40 90
mΩ IC = -2A, IB = -200mA
Base-Emitter Saturation Voltage VBE(SAT) -0.9 V
IC = -1A, IB = -10mA
Base-Emitter Turn-on Voltage VBE(ON) -0.9 V
VCE = -2V, IC = -1A
SMALL SIGNAL CHARACTERISTICS
Transition Frequency fT 100 MHz VCE = -5V, IC = -100mA,
f = 100MHz
Output Capacitance Cobo 100 pF
VCB = -3V, f = 1MHz
Input Capacitance Cibo 330 pF
VEB = -0.5V, f = 1MHz
SWITCHING CHARACTERISTICS
Turn-On Time ton 180 ns
VCC = -15V, IC = -750mA,
IB1 = -15mA
Delay Time td 60 ns
Rise Time tr 120 ns
Turn-Off Time toff 430 ns
VCC = -15V, IC = -750mA,
IB1 = IB2 = -15mA
Storage Time ts 300 ns
Fall Time tf 130 ns
Note: 9. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0246810
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Figure 4 Typical Collector Current
vs. Collector-Emitter Voltage
-I ,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(A)
C
I = -1mA
B
I = -2mA
B
I = -3mA
B
I = -4mA
B
I = -5mA
B
10
100
1,000
h, D
C
C
U
R
R
EN
T
G
AIN
FE
0.1 1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Figure 5 Typical DC Current Gain vs. Collector Current
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = -2V
CE
DSS20200L
Document number: DS31604 Rev. 3 - 2
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DSS20200L
0.001
0.01
0.1
1
1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Figure 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-V ,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION
CE(SAT)
VOLTAGE (V)
I/I = 10
CB
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
1 10 100 1,000 10,000
0
0.2
0.4
0.6
0.8
1.0
1.2
-V , BASE-EMI
T
T
E
R
T
U
R
N
-
O
N
V
O
L
T
A
G
E (V)
BE(ON)
-I , COLLECTOR CURRENT (mA)
C
Figure 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = -2V
CE
1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Figure 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
1.2
-V , BASE-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E (V)
BE(SAT)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
I = 10
CB
/I
0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Figure 9 Typical Capacitance Characteristics
1
10
100
1,000
C
A
P
A
C
I
T
A
N
C
E (p
F
)
C
ibo
C
obo
f = 1MHz
1
10
100
1,000
0 1020304050607080 90100
-I , COLLECTOR CURRENT (mA)
C
Figure 10 Typical Gain-Bandwidth Product
vs. Collector Current
f,
G
AIN-BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = -5V
f = 100MHz
CE
DSS20200L
Document number: DS31604 Rev. 3 - 2
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DSS20200L
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
DSS20200L
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DSS20200L
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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