1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BC856 BC857 BC858 Unit
Collector–Emitter Voltage VCEO –65 –45 –30 V
Collector–Base Voltage VCBO –80 –50 –30 V
Emitter–Base Voltage VEBO –5.0 –5.0 –5.0 V
Collector Current — Continuous IC–100 –100 –100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board, (1)
TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance, Junction to Ambient R
q
JA 556 °C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance, Junction to Ambient R
q
JA 417 °C/W
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
DEVICE MARKING
BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F;
BC857CLT1 = 3G; BC858ALT1 = 3J; BC858BLT1 = 3K; BC858CLT1 = 3L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage BC856 Series
(IC = –10 mA) BC857 Series
BC858 Series
V(BR)CEO –65
–45
–30
—
—
—
—
—
—
V
Collector–Emitter Breakdown Voltage BC856 Series
(IC = –10 µA, VEB = 0) BC857 Series
BC858 Series
V(BR)CES –80
–50
–30
—
—
—
—
—
—
V
Collector–Base Breakdown Voltage BC856 Series
(IC = –10
m
A) BC857 Series
BC858 Series
V(BR)CBO –80
–50
–30
—
—
—
—
—
—
V
Emitter–Base Breakdown Voltage BC856 Series
(IE = –1.0
m
A) BC857 Series
BC858 Series
V(BR)EBO –5.0
–5.0
–5.0
—
—
—
—
—
—
V
Collector Cutoff Current (VCB = –30 V)
Collector Cutoff Current (VCB = –30 V, TA = 150°C) ICBO —
——
—–15
–4.0 nA
µA
1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a registered trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by BC856ALT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Devices
12
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain BC856A, BC857A, BC585A
(IC = –10 µA, VCE = –5.0 V) BC856A, BC857A, BC858A
BC857C, BC858C
(IC = –2.0 mA, VCE = –5.0 V) BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC857C, BC858C
hFE —
—
—
125
220
420
90
150
270
180
290
520
—
—
—
250
475
800
—
Collector–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
VCE(sat) —
——
—–0.3
–0.65
V
Base–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
VBE(sat) —
—–0.7
–0.9 —
—
V
Base–Emitter On Voltage
(IC = –2.0 mA, VCE = –5.0 V)
(IC = –10 mA, VCE = –5.0 V)
VBE(on) –0.6
——
—–0.75
–0.82
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz) fT100 — — MHz
Output Capacitance
(VCB = –10 V, f = 1.0 MHz) Cob — — 4.5 pF
Noise Figure
(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
NF — — 10 dB
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC857/BC858
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
–0.2
0.2
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
–0.6
–0.7
–0.8
–0.9
–1.0
–0.5
0
–0.2
–0.4
–0.1
–0.3
1.6
1.2
2.0
2.8
2.4
–1.2
–1.6
–2.0
–0.02 –1.0 –10
0–20
–0.1
–0.4
–0.8
hFE, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
VCE, COLLECTOR–EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)
°θ
1.5
1.0
0.7
0.5
0.3
–0.2 –10 –100
–1.0
TA = 25
°
CVBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
VCE = –10 V
TA = 25
°
C
–55
°
C to +125
°
C
IC = –100 mA
IC = –20 mA
–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
IC = –200 mAIC = –50 mAIC =
–10 mA
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
–0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
–0.5
C, CAPACITANCE (pF)
f, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
T
TA = 25
°
C
Cob
Cib
–0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40
150
–1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50
VCE = –10 V
TA = 25
°
C
TA = 25
°
C
1.0
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC856
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
Figure 8. “On” Voltage
IC, COLLECTOR CURRENT (mA)
–0.8
–1.0
–0.6
–0.2
–0.4
1.0
2.0
–0.1 –1.0 –10 –200
–0.2
0.2
0.5
–0.2 –1.0 –10 –200
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = –5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
–1.0
–1.2
–1.6
–2.0
–0.02 –1.0 –10
0–20
–0.1
–0.4
–0.8
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)
°θ
–0.2 –2.0 –10 –200
–1.0
TJ = 25
°
C
IC =
–10 mA
hFE, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
VCE = –5.0 V
TA = 25
°
C
0–0.5 –2.0 –5.0 –20 –50 –100
–0.05 –0.2 –0.5 –2.0 –5.0
–100 mA
–20 mA
–1.4
–1.8
–2.2
–2.6
–3.0 –0.5 –5.0 –20 –50 –100
–55
°
C to 125
°
C
θ
VB for VBE
–2.0 –5.0 –20 –50 –100
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mA)
–0.1 –0.2 –1.0 –50
2.0 –2.0 –10 –100
100
200
500
50
20
20
10
6.0
4.0
–1.0 –10 –100
VCE = –5.0 V
C, CAPACITANCE (pF)
f, CURRENT–GAIN – BANDWIDTH PRODUCT
T
–0.5 –5.0 –20
TJ = 25
°
C
Cob
Cib
8.0
–50 mA –200 mA
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 13. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
2.0 5.01.00.50.20.1
RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01 20 5010 200 500100 1.0 k 2.0 k 5.0 k 10 k
Figure 14. Active Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (V)
–200
–1.0
IC, COLLECTOR CURRENT (mA)
TA = 25
°
C
D = 0.5
0.2
0.1 0.05 SINGLE PULSE
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
TJ = 25
°
C
Z
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 83.3
°
C/W MAX
Z
θ
JA(t) = r(t) R
θ
JA
R
θ
JA = 200
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
t1t2
P(pk)
DUTY CYCLE, D = t1/t2
–100
–50
–10
–5.0
–2.0 –5.0 –10 –30 –45 –65 –100
1 s
BC558
BC557
BC556
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from
the data in Figure 13. At high case or ambient temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by the secondary breakdown.
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
PD = TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T A of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD = 150°C – 25°C
556°C/W = 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•Always preheat the device.
•The delta temperature between the preheat and
soldering should be 100°C or less.*
•When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
•The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
•After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
•Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
7
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
DJ
K
L
A
C
BS
H
GV
3
12
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0180 0.0236 0.45 0.60
L0.0350 0.0401 0.89 1.02
S0.0830 0.0984 2.10 2.50
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
8 Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
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the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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BC856ALT1/D
◊
