F1048A - OSRAM Opto Semiconductors

F 1048A

F 1048B

GaAlAs-Infrarot- Lumineszenzdiode (880 nm)

GaAlAs Infrared Emitting Diode (880 nm)

Vorläufige Date n / Preliminary Da ta

2003-04-10 1

Wesentliche Merkmale

• Typ. Gesamtleistung: 25 mW @ 100 mA im

TOPLED® Gehäuse

•Chipgröße 400 x 400 µm2

•GaAlAs-LED mit sehr hohem Wirkungsgrad

•Hohe Zuverlässigkeit

•Hohe Impulsbelastbarkeit

•Gute spektrale Anpassung an

Si-Fotoempfänger

•Vorderseitenmetallisierung: Aluminium

Rückseitenmetallisierung: Goldlegierung

•Lieferung: vereinzelt auf Folie

Anwendungen

•Gerätefernsteuerungen für Gleich- und

Wechsellichtbetrieb

•Lichtschranken bis 500 kHz

•Sensorik

•Diskrete Optokoppler

Typ

Type Bestellnummer

Ordering Code Beschreibung

Description

F 1048A Q67220-C1277 Infrarot emittierender Chip, Oberseite Kathodenanschluss

Infrared emitting die, top side cathode connection

F 1048B on request Infrarot emittierender Chip, Oberseite Kathodenanschluss,

Oberfläche aufgerauht.

Infrared emitting die, top side cathode connection, surface

frosted

Features

•Typ. total radiant power: 25 mW @ 100 mA in

TOPLED® package.

•Chipsize: 400 x 400 µm²

•Very highly efficient GaAlAs LED

•High reliability

•High pulse handling capability

•Good spectral match to silicon photodetectors

•Frontside metallization: aluminum

Backside metallization: gold alloy

•Delivery: diced on foil

Applications

•Remote control for steady and varying

intensity

•Light-reflection switches (max. 500 kHz)

•Sensor technology

•Discrete optocouplers

2003-04-10 2

F 1048A, F 1048B

Elektrische Werte (TA = 25 °C)

Electrical values1) (TA = 25 °C)

Bezeichnung

Parameter Symbol

Symbol Wert

Value2) Einheit

Unit

min. typ. max.

Emissionswellenlänge

Peak wavelength

IF = 10 mA

λpeak 880 nm

Spektrale Bandbreite bei 50% von Imax,

Spectral bandwidth at 50% of Imax

IF = 10 mA

∆λ 100 nm

Schaltzeiten, Ie von 10% auf 90% und von 90% auf

10%, bei IF = 100 mA, RL = 50 Ω

Switching times, Ie from 10% to 90% a nd from 90%

to 10%, IF = 100 mA, RL = 50 Ω

tr, tf0.5/0.4 µs

Sperrspannung

Reverse voltage

IR = 1µA

VR5V

Durchlaβspannung

Forward voltage

IF = 100 mA

VF1.9 V

Strahlungsleistung

Radiant Power3)

IF = 100 mA

F1048A

F1048B

Φe

14 mW

Photostrom (Spezifikationsparameter)

Photocurrent (specified parameter)

IF = 100 mA

F1048A

F1048B

0.50

0.65 a.u.

a.u.

1) Measurement limits describe actual settings and do not include measurement uncertainties. Each wafer and each

fragment o f a wa fe r is su bj ect to fina l te sti ng. The wafer or its pi ec es are i nd iv idu al ly atta ched on f oi ls (r in g) . Sa mpl e

chips are picked f rom each foil and place d on a special carrier f or measurement purposes. The sampl ing density is one

chip per 1c m². If a sampl e f ai ls , t he a rea a r ound t hat sampl e is tested agai n by taking sampl es i n fo urf ol d den sit y. I f a

sample fails in that measurement, an area of 0,25 cm² around each failed sample is marked by pen.

All el. values are referenced to the vendor's measurement system (correlation to customer product(s) is required)

2) Typical (re fere d to as ty p.) dat a a re def i ned as l on g- te rm production me an va lu es and are only given for informa ti on .

This is no t a specified value

3) Radiant power is measured on TO-18 header in integrating sphere.

F 1048A, F 1048B

2003-04-10 3

Mechanische Werte

Mechanical values

Bezeichnung

Parameter Symbol

Symbol Wert

Value1) Einheit

Unit

min. typ. max.

Chipkantenlänge (x-Richtun g)

Length of chip edge (x-direction) Lx0.38 0.40 0.42 mm

Chipkantenlänge (y-Richtun g)

Length of chip edge (y-direction) Ly0.38 0.40 0.42 mm

Durchmesser des Wafers

Diameter of the wafer D48 mm

Chiphöhe

Die height H210 µm

Bondpadmaße

Bondpad dimensions d110 x

110 µm²

Weitere Informationen

Additional information2)

Vorderseitenmetallisierung

Metallization frontside Aluminium

Aluminum

Rückseitenmetallisierung

Metallization backside Goldlegierung

Au-Alloy

Trennverfahren

Dicing Sägen

Sawing

Verbindung Chip - Träger

Die bonding Kleben

Glueing

1) Typical (ref ered t o a s typ.) d at a are def in ed a s long-term pro duc ti on mean values and are only g iv en f or inf orma ti on .

This is no t a specified value

2) All chips are checked according to the following procedure and the OSRAM OS specification of the visual inspection

A63501-Q0013-N001-*-76G3:The visual inspection shall be made in accordance to the "specification of the visual

inspection" as referenced.The visual inspection of chip backside is performed by eye for 100% of the area of each

wafer. If decisions (good/bad) are not possible additional a stereo microscope with incident light with 40x-80x

magnific ation is used. Are as > ¼ cm² which have a n amount of more tha n 5% failed dies wi ll be marked manuall y with

pen.The visual inspection of chip frontside is performed by a stereo microscope with incident light with 40x-80x

magnification for 100% of the area of each wafer.Areas greater than 5x5 mm² and with a failure density higher than

25% are marked by pen and inked around. Areas with failure density higher than 10% each failure die is inked

individua lly.The inked a rea from backside must be transf ered to frontsi de and has to be mark ed manually wi th pen and

inked around.The quality inspection (final visual inspection) is performed by production. An additional visual

inspection step as special release procedure by QM after the final visual inspection is not installed.

F 1048A, F 1048B

2003-04-10 4

Grenzwert1)

Maximum Ratings

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Maximaler Betriebstemperaturbereich

Maximum Operating temperature range Top -40...+100 °C

Maximaler Lagertemperaturbereich

Maximum storage temperature range Tstg -40...+100 °C

Maximaler Durchlaßstrom

Maximum forward current IF100 mA

Maximaler Stoßstrom

Maximum surge current

tp = 10 µs, D = 0.005

IS2.5 A

Maximale Sperrschichttemperatur

Maximum junction temperature Tj125 °C

1)Maximum ratings are strongly package dependent and may differ between different packages. The values given

represent the chip in a TO-18 package.

F 1048A, F 1048B

2003-04-10 5

Relati ve Sp ectral Emission1) IFrel= f (λ)

TA = 25 °C

Forward Cu rrent1)

IF= f (VF), Single pulse, tp = 20 ms, TA = 25 °C

1) Based on typ.(see page 2, footnote 2 for explanation)

data measured in OSRAM Opto Semiconductor’s

TOPLED® package.

Radiant Intensity1) Ie/Ie(100mA) = f (IF)

TA = 25 °C, single pulse: tp = 20 µs

Permissible Pulse Po wer1)

Duty cycle D = parameter, TA = 25 °C

750

rel

OHR00877

800 850 900 950 nm 1000

100

OHR01173

-3

-2

-1

1 2 3 4 5

OHR00878

Ιe

-3

-2

-1

10 101102104

(100mA)

OHR00948

-5

10 2

10 3

10 4

10 -4 10 -3 10 -2 10 -1 10 0

0.2

0.5

0.1

0.005

0.010.020.05

2003-04-10 6

F 1048A, F 1048B

Maßzeichnung

Chip Outlines

Maße werden als typische1) Werte wie folgt angegeben: mm (inch) / Dimensions are specified as typical1) values as

follows: mm (inch).

Published by OSRAM Opto Semiconductors GmbH

Wernerwerkstrasse 2, D-93049 Regensburg

Attention please!

The inform ation gen erally descri bes the type of compone nt and shall not be considered as assured ch aracteristic s or

detaile d sp ec if ic at ion.

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substanc es . For information on the types in question ple as e c ont ac t our s ales organization.

Handling and Storage Conditions:

The hermetically sealed shipment lot shall be opened under temperature and moisture controlled cleanroom

environment only. Customer has to follow the according rules for disposition of material that can be hazardous for

humans and environment.

Packing

Chips are placed on a blue foil, wh ic h is fixed in a yellow frame of 5” diameter.

For shipment the wafers of a shipment lot are arranged to stacks. The top and bottom of the stack is covered by a

dummy disk to protect the top and bottom wafer from damage. The whole package is fixed by rubber strings and

hermetically sealed in a plastic bag for storage and shipment. Please use the recycling operators known to you. We can

also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is

sorted. You will have to bear the costs of transport. For packing material that is returned to us unsorted or which we are

not oblig ed t o ac c ept , we shall have to invoice y ou f or any costs incurred.

Further Conditions:

If not otherwise arranged, the “General Conditions for the supply of products and services of the electrical and

electronics industry” apply for any shipment, just as the Supplier Addendum " Chip business" to the “General Conditions

for the supply of products and services of the electrical and electronics industry”. If these documents are not familiar to

you, please request them at our nearest sales office.

Com pon en ts used in life-su pport device s or systems must be ex pressly autho r ized b y us for such purpose!

Critical components2), may only be used in life-support devices or systems3) with the express written approval of

OSRAM OS.

1) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.

This is no t a specified val ue.

2)A critical comp onent is a component used in a life-supp ort device or system whose fail ure can reasonably be expec ted to

cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

3)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain

and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.

GMOY6077

0.21 (0.0083)

0.11 (0.0043)

n-contact

p-contact

0.4 (0.0157)