FEATURES
● High reliability
● Small surface mounting type
APPLICATIONS
computer and industrial applications
CONSTRUCTION
● Silicon epitaxial planar
ABSOLUTE MAXIMUM RATINGS (TJ=25℃)
Parameter
Repetitive peak reverse voltage
Reverse Vltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
Junction temperature
Storge temperature range
MAXIMUM THERMAL RESISTANCE (TJ=25℃)
Parameter
Junction ambient
ELECTRICAL CHARACTERISTICS
TJ=25℃
Parameter Symbol Min Typ Max Unit
VF0.54 0.62 V
VF0.66 0.74 V
VF0.76 0.86 V
VF0.82 0.92 V
VF0.87 1.0 V
IR100 nA
IR100 uA
Diode capacitance CD2.5 pF
Reverse recovery time trr 4 ns
~ 429 ~
IFRM
VR=0, f=1MHZ, VHF=50mA
300
VR=0
IF= IR=10…100mA,RL=100Ω
Test Conditions
IF=1mA
VR=50V
VR=50V, Tj=150℃
Reverse current
TJ
Unit
Forward voltage
IF=10mA
IF=50mA
IF=100mA
IF=200mA
TsTg-65 ~ +175
● High speed switch and general purpose use in
tp=1uS
500 K/WOn PC board 50mm*50mm*1.6mm
Test Conditions
RthJA
Symbol Value Unit
℃
mA
℃
mAIF
PVmW
75
IFAV 53
V
IFSM 75 A
VR75
HIGH-SPEED SWITCHING DIODE
Dimensions in inches and (millimeters)
LL4151
VRRM 100 V
Type Symbol ValueTest Conditions
DL - 35
.055(1.4)
.063(1.6)
.020(0.5)
.012(0.3).012(0.3)
.020(0.5)
.146(3.7)
.130(3.3)
RATING AND CHARACTERISTIC CURVES
~ 430 ~
LL4151
FIG.3-REVERSE CURRENT VS. JUNCTION TEMPERATURE
IR (uA)
TJ((°C)
0.1
1
0.01
10
0 100 200
100
1000
VR=75V
TYPICAL VALUES
VR=20V
TYPICAL VALUES
VR(V)
FIG. 4 -DIODE CAPACITANCE VS. REVERSE
VOLTAGE (TYPICAL VALUES)
Cd
(pF)
0.8
0.6
0.4 010 20
1.0
1.2
f=1MHZ,TJ=25°C
Tamb(°C)
FIG. 1 - MAXIMUM PERMISSIBLE CONTINUOUS
FORWARD CURRENT VS. AMBIENT TEMPERATURE
IF
(m A)
0100 200
400
100
0
200
300
VF (V)
FIG. 2 -FORWARD CURRENT VS.FORWARD
VOLTAGE
IF
(m A)
400
200
0
012
600
TJ=175°C
TYPICAL VALUES
TJ=25°C
TYPICAL VALUES
