• Up to 3.5 GHz Operation
• 13 dB Small Signal Gain at 3.55 GHz
• 60W Typical Psat
• 55 % Efficiency at Psat
• 48 V Operation
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Applications
Features
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application
1
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Disclaimer: Subject to change without notice
Rev.2.0 Jan./2018
Absolute Maximum Ratings
Note:
Continuous use at maximum temperature will affect MTTF.
Current limit for long term, reliable operation
After additional updates
Parameter
Drain-Source Voltage
Symbol
VDSS
Rating
160
Units
Volts
Conditions
2 5 ˚ C
Gate-to-Source Voltage3VGS -10, +2 Volts 2 5 ˚C
Storage Temperature3TSTG -65, +150 ˚C
Operating Junction Temperature1,3 TJ225 ˚C
Maximum Forward Gate Current3IGMAX 30 mA 2 5 ˚C
Maximum Drain Current2IDMAX 1 A
Id@
Vd =10V, Vg=
1V
Soldering Temperature3TS245 ˚C
Storage Temperature3TSTG -65, +150 ˚C
60W RF GaN Power Transistor
FP483P5060UH(S)
2018.05.25-11:13
DC Characteristics1 (TC = 25˚C )
RF Characteristics
(TC = 25˚C, F0 = 3.55 GHz unless otherwise noted)
2
Note:
Measured on wafer prior to packaging.
Scaled from PCM data.
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Disclaimer: Subject to change without notice
Rev.2.0 Jan./2018
Parameter
Gate Threshold Voltage
Symbol
VGS(th)
MIN TYP
-3.1
MAX Units
VDC
Conditions
VDS = 10 V, ID = 1 mA
Gate Quiescent Voltage VGS(Q) -2.8 VDC VDS = 48 V, ID = 100 mA
Saturated Drain Current2IDS 1000 mA/mm VDS = 10 V, VGS = 1 V
Drain-Source Breakdown Voltage VBR 160 VDC ID = 1 mA/mm
Parameter Symbol MIN TYP MAX Units Conditions
Power Gain GSS TBD dB VDD = 4 8 V, IDQ = 100 mA, Pulse Width = 100
usec, Duty Cycle = 10%
OutputPower POUT TBD WVDD = 48 V, IDQ = 100 mA, Pulse Width = 100
usec, Duty Cycle = 10%
Saturated
Output
Power
PSAT 60 WVDD = 48 V, IDQ = 100 mA, Pulse Width = 100
usec, Duty Cycle = 10%
Pulsed
Drain
Efficiency1
η55 %VDD = 48 V, IDQ = 100 mA, Pulse Width = 100
usec, Duty Cycle = 10% @ Psat
Output
Mismatch
Stress
VSWR - - 10:1
No damage at all phase angles, VDD =
48 V, IDQ = 10
0
mA, POUT = 1 W CW
Note:
1. Drain Efficiency = POUT / PDC
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Disclaimer: Subject to change without notice
Rev.2.0 Jan./2018
Partnumbercode
FP 48 3P5 060 U H
S (Surface), H (Screw Hole)
M (Matched), U (Unmatched)
Power (Watt)
Frequency (GHz)
Drain Voltage (DC)
Information furnished by FeraRF Ltd. is believed to be accurate and reliable. However, no
responsibility is assumed by FeraRF Ltd. for its use, nor for any infringements of patents
or other rights of third parties that may result from its use. The information contained is
provided “as it is" and with all defects, and the whole risk associated with such
information is entirely with the user. Specifications subject to change without notice.
FeraRF Ltd. and registered trademarks are the property of their respective owners.
Customers must search and verify the updated information before placing orders for our
products. We makes no guarantee or representation regarding the information
contained herein the useing of products for any specific purpose. FeraRF Ltd. products
are not warranted or authorized for use as key components in conditions, or other
applications where a failure would be expected to cause severe personal injury or death.
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Disclaimer
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All Rights Reserved, Copright©FERARF Ltd.
Disclaimer: Subject to change without notice
Rev.2.0 Jan./2018
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