2011-07-28
1
BCR35PN
NPN/PNP Silicon Digital Transistor Array
• Switching circuit, inverter, interface circuit,
driver circuit
• Two (galvanic) internal isolated NPN/PNP
Transistors in one package
• Built in bias resistor NPN and PNP
(R1=10 kΩ, R2=47 kΩ)
• Pb-free (ROHS compliant) package
• Qualified according AEC Q101
1
623
54
EHA07176
654
321
C1 B2 E2
C2B1E1
1
R
R2
R1
R2
TR1 TR2
Tape loading orientation
EHA07193
123
456
W1s
Direction of Unreeling
Top View Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
Type Marking Pin Configuration Package
BCR35PN WUs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings for NPN and PNP Types
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 50 V
Collector-base voltage VCBO 50
Input forward voltage Vi(fwd) 40
Input reverse voltage Vi(rev) 6
DC collector current IC100 mA
Total power dissipation, TS = 115 °C Ptot 250 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS ≤ 140 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
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BCR35PN
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics for NPN and PNP Types
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
V(BR)CEO 50 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 50 - -
Collector cutoff current
VCB = 40 V, IE = 0
ICBO - - 100 nA
Emitter cutoff current
VEB = 6 V, IC = 0
IEBO - - 167 µA
DC current gain 1)
IC = 5 mA, VCE = 5 V
hFE 70 - - -
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
VCEsat - - 0.3 V
Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off) 0.5 - 1
Input on Voltage
IC = 2 mA, VCE = 0.3 V
Vi(on) 0.5 - 1.4
Input resistor R17 10 13 kΩ
Resistor ratio R1/R20.19 0.21 0.24 -
AC Characteristics for NPN and PNP Types
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT- 150 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 2 - pF
1) Pulse test: t < 300µs; D < 2%
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BCR35PN
NPN Type
Collector-Emitter Saturation Voltage
VCEsat = f (IC), hFE = 20
10 -3 10 -2 10 -1
A
IC
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
V
0.5
VCEsat
-40 °C
-25 °C
25 °C
85 °C
125 °C
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
10 -4 10 -3 10 -2 10 -1
A
IC
0
10
1
10
2
10
3
10
hFE
-40 °C
-25 °C
25 °C
85 °C
125 °C
Input off voltage Vi(off) = f (IC)
VCE = 5V (common emitter configuration)
10 -5 10 -4 10 -3 10 -2 10 -1
A
IC
-1
10
0
10
1
10
V
Vi(off)
-40 °C
-25 °C
25 °C
85 °C
125 °C
Input on Voltage Vi(on) = f (IC)
VCE = 0.3V (common emitter configuration)
10 -5 10 -4 10 -3 10 -2 10 -1
A
IC
-1
10
0
10
1
10
2
10
V
Vi(on)
-40 °C
-25 °C
25 °C
85 °C
125 °C
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BCR35PN
PNP Type
Collector-Emitter Saturation Voltage
VCEsat = f (IC), hFE = 20
10 -3 10 -2 10 -1
A
IC
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
1
VCEsat
-40 °C
-25 °C
25 °C
85 °C
125 °C
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
10 -4 10 -3 10 -2 10 -1
A
IC
0
10
1
10
2
10
3
10
hFE
-40 °C
-25 °C
25 °C
85 °C
125 °C
Input off voltage Vi(off) = f (IC)
VCE = 5V (common emitter configuration)
10 -5 10 -4 10 -3 10 -2 10 -1
A
IC
-1
10
0
10
1
10
V
Vi(off)
-40 °C
-25 °C
25 °C
85 °C
125 °C
Input on Voltage Vi(on) = f (IC)
VCE = 0.3V (common emitter configuration)
10 -5 10 -4 10 -3 10 -2 10 -1
IC
-1
10
0
10
1
10
2
10
Vi(on)
-40 °C
-25 °C
25 °C
85 °C
125 °C
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BCR35PN
Total power dissipation Ptot = f (TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
25
50
75
100
125
150
175
200
225
250
mW
300
Ptot
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax / PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load RthJS = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
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BCR35PN
Package SOT363
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
BCR108S
Type code
Pin 1 marking
Laser marking
0.3
0.70.9
0.65
0.65
1.6
0.2
4
2.15 1.1
8
2.3
Pin 1
marking
+0.1
0.2
1
6
23
5 4
±0.2
2
+0.1
-0.05
0.15
±0.1
1.25
0.1 MAX.
0.9 ±0.1
A
-0.05 6x
0.1 M
0.650.65
2.1
±0.1
0.1
0.1 MIN.
M
0.2 A
Pin 1
marking
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BCR35PN
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
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