© Semiconductor Components Industries, LLC, 2011
September, 2011 − Rev. 5
1Publication Order Number:
2N6400/D
2N6400 Series
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half−wave silicon gate−controlled, solid−state devices are needed.
Features
•Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
•Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•Blocking Voltage to 800 V
•These are Pb−Free Devices
MAXIMUM RATINGS* (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = *40 to 125°C, Sine Wave 50 to 60
Hz; Gate Open)
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
VDRM,
VRRM
50
100
200
400
600
800
V
On-State Current RMS (180° Conduction
Angles; TC = 100°C)
IT(RMS) 16 A
Average On-State Current (180° Conduc-
tion Angles; TC = 100°C)
IT(AV) 10 A
Peak Non-repetitive Surge Current (1/2
Cycle, Sine Wave 60 Hz, TJ = 25°C)
ITSM 160 A
Circuit Fusing Considerations (t = 8.3 ms) I2t 145 A2s
Forward Peak Gate Power (Pulse Width ≤
1.0 ms, TC = 100°C)
PGM 20 W
Forward Average Gate Power (t = 8.3 ms,
TC = 100°C)
PG(AV) 0.5 W
Forward Peak Gate Current (Pulse Width ≤
1.0 ms, TC = 100°C)
IGM 2.0 A
Operating Junction Temperature Range TJ−40 to
+125
°C
Storage Temperature Range Tstg −40 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCRs
16 AMPERES RMS
50 thru 800 VOLTS
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4 Anode
TO−220AB
CASE 221A
STYLE 3
1
2
3
4
MARKING
DIAGRAM
2N604xG
AYWW
x = 0, 1, 2, 3, 4 or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
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2N6400 Series
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.5 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds TL260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
* Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C
TJ = 125°C
IDRM,
IRRM −
−
−
−
10
2.0
mA
mA
ON CHARACTERISTICS
*Peak Forward On−State Voltage (ITM = 32 A Peak, Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%) VTM − − 1.7 V
* Gate Trigger Current (Continuous dc) TC = 25°C
(VD = 12 Vdc, RL = 100 W)T
C = −40°C
IGT −
−
9.0
−
30
60
mA
* Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 W)T
C = 25°C
TC = −40°C
VGT
−
−
0.7
−
1.5
2.5
V
Gate Non−Trigger Voltage (VD = 12 Vdc, RL = 100 W), TC = +125°CVGD 0.2 − − V
* Holding Current TC = 25°C
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
*TC = −40°C
IH−
−
18
−
40
60
mA
Turn-On Time (ITM = 16 A, IGT = 40 mAdc, VD = Rated VDRM) tgt −1.0 −ms
Turn-Off Time (ITM = 16 A, IR = 16 A, VD = Rated VDRM)
TC = 25°C
TJ = +125°C
tq
−
−
15
35
−
−
ms
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform)
TJ = +125°C
dv/dt −50 −V/ms
*Indicates JEDEC Registered Data.
2N6400 Series
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3
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol Parameter
VDRM Peak Repetitive Off State Forward Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage
IHHolding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
Forward Blocking Region
IRRM at VRRM
(off state)
C
T , MAXIMUM CASE TEMPERATURE ( C)°
6.0
120
100
112
128
60°
α = 30°
0 1.0 2.0 3.0 8.0
α = CONDUCTION ANGLE
Figure 1. Average Current Derating
IT(AV), AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
α
90°
P , AVERAGE POWER (WATTS)
(AV)
12
0
4.0
8.0
TJ ≈ 125°C
Figure 2. Maximum On−State Power Dissipation
IT(AV), AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
7.00 1.0 2.0 3.0 8.0
α = CONDUCTION ANGLE
α
4.0 5.0 7.0
180°
dc
10
2.0
6.0
14
16
4.0 5.0 6.0
60°
α = 30°
90°
180°
dc
124
104
108
116
10
9.0
120°
9.0 10
120°
2N6400 Series
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4
Figure 3. On−State Characteristics Figure 4. Maximum Non−Repetitive Surge Current
Figure 5. Thermal Response
1.0
0.02
0.03
0.05
0.07
0.1
100
0.2
0.3
0.5
0.7
0.2 0.3 0.5 1.0 2.0
0.8
0.1
ZqJC(t) = RqJC • r(t)
1.0
120
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
TJ = 125°C
f = 60 Hz
NUMBER OF CYCLES
130
140
150
160
20
2.0 3.0 4.0 6.0 8.0 10
0.4
0.01
t, TIME (ms)
3.0 5.0
110
0.2
0.3
0.5
0.7
7.0
5.0
1.0
2.0
10
50
3.0
20
30
70
vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
1.6 2.42.0 4.0 4.41.2
30 50 100 200 300 500 2.0 k10 3.0 k 5.0 k 10 k1.0 k
I , PEAK SURGE CURRENT (AMP)
TSM
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) TM
i
, INSTANTANEOUS ON-STATE FORWARD CURRENT (AMPS)
TJ = 25°C
125°C
1 CYCLE
200
2.8 3.63.2
2N6400 Series
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5
I , HOLDING CURRENT (mA)
H
TYPICAL CHARACTERISTICS
TJ, JUNCTION TEMPERATURE (°C)
100
10
1
10
1
100
Figure 6. Typical Gate Trigger Current
versus Pulse Width
30
50
20
10
5.0
70
7.0
125110806550355-10-25 20
TJ, JUNCTION TEMPERATURE (°C)
2001005020105.00.2 1.00.5 2.0
PULSE WIDTH (ms)
iGT
IGT
VGT
125110958050355-40
0.8
-10-25 20
TJ, JUNCTION TEMPERATURE (°C)
0.6
0.4
0.2
, PEAK GATE CURRENT (mA)
3.0
100
, GATE TRIGGER VOLTAGE (VOLTS)
1.0
TJ = -40°C
25°C
125°C
, GATE TRIGGER CURRENT (mA)
-40
OFF‐STATE VOLTAGE = 12 V
RL = 50 W
2.0
1.0
Figure 7. Typical Gate Trigger Current
versus Junction Temperature
Figure 8. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 9. Typical Holding Current
versus Junction Temperature
95
65
0.9
0.7
0.5
0.3
125110958050355-40 -10-25 20 65
2N6400 Series
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6
ORDERING INFORMATION
Device Package Shipping†
2N6400G TO−220AB
(Pb−Free)
500 Units / Box
2N6401G TO−220AB
(Pb−Free)
2N6402G TO−220AB
(Pb−Free)
2N6403G TO−220AB
(Pb−Free)
2N6403TG TO−220AB
(Pb−Free) 50 Units / Rail
2N6404G TO−220AB
(Pb−Free)
500 Units / Box
2N6405G TO−220AB
(Pb−Free)
2N6400 Series
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7
PACKAGE DIMENSIONS
TO−220
CASE 221A−07
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
A
K
L
V
G
D
N
Z
H
Q
FB
123
4
−T−SEATING
PLANE
S
R
J
U
TC
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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2N6400/D
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