SCHOTTKY RECTIFIER 2.1 Amp
10MQ100N
Bulletin PD-20520 rev. M 07/04
1
Major Ratings and Characteristics
I
FDC 2.1 A
VRRM 100 V
IFSM @ tp = 5 µs sine 120 A
VF@ 1.5Apk, TJ=125°C 0.68 V
TJrange - 55 to 150 °C
Characteristics 10MQ100N Units The 10MQ100N surface mount Schottky rectifier has been de-
signed for applications requiring low forward drop and very small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes, battery
charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Description/ Features
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Case Styles
10MQ100N
SMA
IF(AV) = 2.1Amp
VR = 100V
10MQ100N
Bulletin PD-20520 rev. M 07/04
2www.irf.com
Part number 10MQ100N
VRMax. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 100
Voltage Ratings
VFM Max. Forward Voltage Drop (1) 0.78 V @ 1A
* See Fig. 1 0.85 V @ 1.5A
0.63 V @ 1A
0.68 V @ 1.5A
IRM Max. Reverse Leakage Current (1) 0.1 mA TJ = 25 °C
* See Fig. 2 1 mA TJ = 125 °C
VF(TO) Threshold Voltage 0.52 V TJ = TJ max.
rtForward Slope Resistance 78.4 mΩ
CTTypical Junction Capacitance 38 pF VR = 10VDC, TJ = 25°C, test signal = 1Mhz
LSTypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs
(Rated VR)
TJ = 25 °C
TJ = 125 °C
VR = rated VR
Electrical Specifications
Parameters 10MQ Units Conditions
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJMax. Junction Temperature Range (*) - 55 to 150 °C
Tstg Max. Storage Temperature Range - 55 to 150 °C
RthJA Max. Thermal Resistance Junction 80 °C/W DC operation
to Ambient
wt Approximate Weight 0.07(0.002) g (oz.)
Case Style SMA Similar D-64
Device Marking IR1J
Thermal-Mechanical Specifications
Parameters 10MQ Units Conditions
Absolute Maximum Ratings
IF(AV) Max. Average Forward Current 1.5 A 50% duty cycle @ TL = 126 °C, rectangular wave form.
* See Fig. 4 On PC board 9mm2 island (.013mm thick copper pad area)
IFSM Max. Peak One Cycle Non-Repetitive 120 5µs Sine or 3µs Rect. pulse
Surge Current * See Fig. 6, TJ
= 25°C 30 10ms Sine or 6ms Rect. pulse
EAS Non-Repetitive Avalanche Energy 1.0 mJ TJ = 25 °C, IAS = 0.5A, L = 8mH
IAR Repetitive Avalanche Current 0.5 A
Parameters 10MQ Units Conditions
AFollowing any rated
load condition and
with rated VRRM applied
< thermal runaway condition for a diode on its own heatsink
(*) dPtot 1
dTj Rth( j-a)
10MQ100N
Bulletin PD-20520 rev. M 07/04
3
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Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0.1
1
10
0.4 0.6 0.8 1 1.2 1.4 1.6
Instantaneous Forward Current - I (A)
F
FM
T = 150°C
T = 125°C
T = 25°C
J
J
J
Forward Voltag e Drop - V (V)
0
0.0001
0.001
0.01
0.1
1
020406080100
R
R
125°C
100°C
75°C
50°C
25°C
Reverse Current - I (mA)
T = 150°C
J
Reverse Voltage - V (V)
1
10
100
020406080100
T = 25°C
J
R
T
Junction Capacitance - C (pF)
Reverse Voltage - V (V)
10MQ100N
Bulletin PD-20520 rev. M 07/04
4www.irf.com
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1
= 80% rated VR
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 0.4 0.8 1.2 1.6 2 2.4
DC
Average Power Loss - (Watts)
F( A V )
RM S Li m i t
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Averag e Forward Current - I (A)
90
100
110
120
130
140
150
0 0.4 0.8 1.2 1.6 2 2.4
DC
Allowable Case Temperature - (°C)
F( A V )
se e no te ( 2 )
Sq ua re wave (D = 0.50)
80% Rated V applied
R
Averag e Forwa rd Current - I (A)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Square Wave Pulse Duration - tp (microsec)
Non - Repetitive Surge Current - I FSM (A)
10
100
10 100 1000 10000
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
Tj = 25˚C
10MQ100N
Bulletin PD-20520 rev. M 07/04
5
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IR LOGO
YYWWX
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
2nd digit of the YEAR
SITE ID
WEEK
CURRENT
VOLTAGE
IR1J
2.50 (.098)
2.90 (.114)
4.00 (.157)
4.60 (.181)
1.40 (.055)
1.60 (.062)
.152 (.006)
.305 (.012)
2.00 (.078)
2.44 (.096)
0.76 (.030)
1.52 (.060)
.103 (.004)
.203 (.008)
4.80 (.188)
5.28 (.208)
2.10 MAX.
(.085 MAX. )
5.53 (.218)
1.27 MIN.
(.050 MIN.)
1.47 MIN.
(.058 MIN.)
SOLDERING PAD
CATHODE ANODE
1 2
12
POLARITY PART NUMBER
Device Marking: IR1J
Dimensions in millimeters and (inches)
Outline SMA
For recommended footprint and soldering techniques refer to application note #AN-994
Outline Table
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
10MQ100N
Bulletin PD-20520 rev. M 07/04
6www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 07/04
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
Tape & Reel Information
Dimensions in millimetres and (inches)
Ordering Information Table
Device Code
15
24
3
1- Current Rating
2- M = SMA
3- Q = Schottky Q Series
4- Voltage Rating (100 = 100V)
5- N = New SMA
6-y none= Box (1000 pieces)
y TR = Tape & Reel (7500 pieces)
7y none = Standard Production
y PbF = Lead-Free
10 M Q 100 N TR -
67
