2005. 6. 28 1/2
SEMICONDUCTOR
TECHNICAL DATA
MMBTA55
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
AUDIO FREQUENCY AMPLIFIER APPLICATIONS.
FEATURES
·Complementary to MMBTA05.
·Driver Stage Application of 20 to 25 Watts Amplifiers.
MAXIMUM RATING (Ta=25℃)
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-60V, IE=0 - - -100 nA
Emitter Cut-off Current ICEO VCE=-60V, IB=0 -- -100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-5mA, IB=0 -60 - - V
DC Current Gain
hFE(1) VCE=-1V, IC=-10mA 100 - -
hFE(2) VCE=-1V, IC=-100mA 100 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - - -0.25 V
Base-Emitter Voltage VBE VCE=-1V, IC=-100mA - - -1.2 V
Transition Frequency fTVCE=-1V, IC=-100mA 50 - - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 14 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC-500 mA
Emitter Current IE500 mA
Collector Power Dissipation PC *350 mW
Junction Temperature Tj150 ℃
Storage Temperature Tstg -55~150 ℃
* : Package Mounted On 99.5% Alumina 10×8×0.6mm.
Lot No.