POSITION SENSITIVE PHOTOMULTIPLIER TUBES R8900-00-C12, R8900U-00-C12 FEATURES 6 (X) + 6 (Y) Cross Plate Anode High Spatial Resolution Wide Effective Area APPLICATIONS Animal PET (Positron Emission Tomography) Compact Gamma Camera Scintillation Mammography Left: R8900-00-C12, Right: R8900U-00-C12 GENERAL Parameter Spectral Response Wavelength of Maximum Response Material Photocathode Minimum Effective Area Material Window Thickness Structure Dynode Number of Stages Anode Weight Suitable Socket Operating Ambient Temperature Storage Temperature Description / Value 300 to 650 420 Bialkali 23.5 x 23.5 Borosilicate glass 0.8 Metal channel dynode 11 6 (X) + 6 (Y) Cross plate anode Approx. 28 (U Type: Approx. 38) E678-32B (sold separately) -80 to +50 (U Type: -30 to +50) -80 to +50 (U Type: -30 to +50) Unit nm nm -- mm -- mm -- -- -- g -- C C Value 1000 0.1 Unit V mA MAXIMUM RATINGS (Absolute Maximum Values) Parameter Supply Voltage Between Anode and Cathode Average Anode Current in Total CHARACTERISTICS (at 25 C) Parameter Luminous (2856 K) Quantum Efficiency at 420 nm Blue Sensitivity Index (CS 5-58) Luminous (2856 K) Cathode Sensitivity Anode Sensitivity Gain Anode Dark Current in Total of Anodes (after 30 min storage in darkness) Anode Pulse Rise Time Electron Transit Time Time Response Transit Time Spread (FWHM) Min. 50 -- 7.5 15 -- Typ. 85 25 10 60 0.7 x 106 Max. -- -- -- -- -- Unit A/lm % -- A/lm -- -- 2 10 nA -- -- -- 2.2 11.9 0.75 -- -- -- ns ns ns NOTE: Anode characteristics are measured with the voltage distribution ratio shown below. VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE Electrodes Ratio K G 0.5 Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 P 1 1 1 1 0.5 1.5 2 1 1 1 1 1 Supply Voltage: 800 V, K: Cathode, G: Grid, Dy: Dynode, P: Anode Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K. POSITION SENSITIVE PHOTOMULTIPLIER TUBES R8900-00-C12, R8900U-00-C12 Figure 1: Typical Spectral Response 108 CATHODE RADIANT SENSITIVITY TPMHB0671EC 10-4 107 10-5 10 QUANTUM EFFICIENCY 106 10-6 105 10-7 1 104 10-8 ANODE DARK CURRENT IN TOTAL OF ANODES 103 10-9 102 10-10 0.1 0.01 200 300 400 500 600 700 101 400 800 500 Figure 3: Spatial Resolution X-Axis 100 PX5 PX4 PX3 PX2 RELATIVE OUTPUT (%) RELATIVE OUTPUT (%) PX6 PX1 40 TPMHB0762EA PY6 PY5 PY4 PY3 PY2 PY1 20 25 60 40 20 20 0 0 5 10 15 20 25 30 POSITION (mm) TPMHB0763EA PX6 (PY6) 1 0.5 0 PX1 (PY1) PX-ANODES PY-ANODES -1 -1.5 -15 -10 -5 0 5 10 15 SUPPLY VOLTAGE : -800 V LIGHT SOURCE : TUNGSTEN LAMP SPOT DIAMETER : 1 mm Figure 4: Position Response Using PX/PY Anodes -0.5 0 POSITION (mm) SUPPLY VOLTAGE : -800 V LIGHT SOURCE : TUNGSTEN LAMP SPOT DIAMETER : 1 mm * Output of each anode under a light spot scanning at a center. CALCULATED POSITION 10-11 900 1000 80 60 1.5 800 Y-Axis TPMHB0761EA 80 0 700 SUPPLY VOLTAGE (V) WAVELENGTH (nm) 100 600 ANODE DARK CURRENT (A) GAIN GAIN CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 100 Figure 2: Typical Gain and Anode Dark Current TPMHB0670EB 5 INCIDENT POSITION (mm) SUPPLY VOLTAGE: -800 V LIGHT SOURCE : TUNGSTEN LAMP WAVELENGTH: 400 nm SPOT DIAMETER: 1 mm SCAN PITCH : 1 mm 10 15 30 Figure 5: Positioning Histogram Example TPMHB0764EA row 1 (PX1) Positioning histogram profile for row 5 (left: column 1) TPMHB0765EA row 10 (PX6) column 1 (PY6) column 10 (PY1) Positioning histogram of a 10 x 10 array of 2 mm x 2 mm x 20 mm BGO elements for 511 keV -rays. Positioning histogram profile for column 5 (left: row 10) Figure 6: R8900-00-C12 Dimensional Outline and Basing Diagram (Unit: mm) Basing Diagram 5 MAX. 5 MAX. 0.8 2.5 MAX. TOP VIEW GUIDE MARK 25.7 0.4 G K 45 10 Dy2 SIDE VIEW Dy4 Dy6 34- 1.5 CUT (IC) Dy1 Dy3 Dy5 Dy7 Dy9 Dy11 CUT (IC) 2.54 PITCH 2.54 1.2 MAX. 25- 0.45 PHOTOCATHODE 4-R3 7.0 0.5 25.5 0.5 +0 26.2 - 0.5 23.5 27.2 0.5 10.16 Dy8 Dy10 BOTTOM VIEW CUT (IC) PX1 1 2 3 4 5 6 7 8 9 10 32 31 11 12 30 29 13 28 14 CUT CUT (IC) (IC) 27 15 26 16 33 34 25 24 23 22 21 20 19 18 17 PX2 PX3 PY1 PX4 PX5 PX6 CUT PY6 PY5 PY4 CUT PY3 PY2 CUT CUT K : Photocathode (IC) (IC) (IC) (IC) Dy : Dynode (Dy1-Dy11) P : Anode (PX1-PX6) BOTTOM VIEW (PY1-PY6) Basing Diagram G : Grid IC : Internal Connection (Do not use) TPMHA0523EA Figure 7: R8900U-00-C12 Dimensional Outline and Basing Diagram (Unit: mm) (R8900-00-C12 with an Insulation Cover) Basing Diagram +0 PHOTOCATHODE TOP VIEW 4.4 0.7 GUIDE CORNER G K Dy2 Dy4 INSULATION COVER SIDE VIEW CUT Dy1 Dy3 Dy5 Dy7 Dy9 Dy11 CUT 2.54 PITCH Dy6 25- 0.45 4-R3 26.2 -0.5 30.0 0.5 4-R1 4 MAX. 12.0 0.5 29.0 0.5 0.6 0.4 23.5 Dy8 BOTTOM VIEW Dy10 PX1 1 2 3 4 5 6 7 8 9 10 32 31 11 12 30 29 13 28 14 27 15 26 16 25 24 23 22 21 20 19 18 17 CUT CUT K : Photocathode Dy : Dynode (Dy1-Dy11) P : Anode (PX1-PX6) (PY1-PY6) G : Grid PX2 PX3 PY1 PX4 PX5 PX6 PY6 PY5 PY4 CUT PY3 PY2 CUT CUT BOTTOM VIEW Basing Diagram TPMHA0524EC POSITION SENSITIVE PHOTOMULTIPLIER TUBES R8900-00-C12, R8900U-00-C12 [ACCESSORIES] (Unit: mm) Socket E678-32B SOLD SEPARATELY D Type Socket Assembly E7514 SOLD SEPARATELY 22.86 4.45 2.92 PIN No. 1 SIGNAL GND 25.4 0.5 PX6 2.54 20.32 12.7 20.32 0.51 12.7 PX5 PY5 PX4 15.0 0.5 22.86 25.4 0.5 PY6 POM HOUSING PY4 PX3 PY3 PX2 1.57 TACCA0094ED 450 PY2 PX1 16 PX6 24 PY6 15 PX5 23 PY5 14 PX4 22 12 PY4 SIGNAL OUTPUT : 0.8D-QEV (GRAY) PX3 20 PY3 11 PX2 19 PY2 10 PX1 PY1 13 PY1 DY11 8 DY10 27 DY9 7 DY8 28 DY7 6 DY6 29 DY5 5 DY4 30 DY3 4 DY2 31 R18 R14 C3 R17 R13 C2 R16 R12 C1 R11 PX2 PX1 -H.V : RG-174/U (RED) POTTING COMPOUND GUIDE MARK R10 PY1 PX4 PX5 PX3 PX6 R9 PY2 PY3 R8 R1, R14: 110 k R2: 330 k R3 to R13: 220 k R15: 1 M R16 to R18: 51 C1 to C3: 10 nF R7 PY4 PY5 PY6 R6 R5 R4 R3 DY1 G K 3 R2 1 R15 R1 32 -H.V : RG-174/U (RED) POWER SUPPLY GND In case of using PMT with E7514, PMT must be operated within 0 C to 50 C (Storage temperature for E7514 only: -15 C to +60 C) TACCA0236EB WARNING ~ High Voltage ~ The product is operated at high voltage potential. Further, the metal housing of the product is connected to the photocathode (potential) so that it becomes a high voltage potential when the product is operated at a negative high voltage (anode grounded). Accordingly, extreme safety care must be taken for the electrical shock hazard to the operator or the damage to the other instruments. * PATENT: USA: 5410211 and other(9), GBR: 551767 and other(9), DEU: 69209809 and other(9), FRA: 551767 and other(9), JPN: 3078905 and other(9) WEB SITE www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se TPMH1299E01 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it OCT. 2006 IP