June 2001
FDS6670A
Single N-Channel, Logic Level, PowerTrench MOSFET
General Description Features
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter FDS6670AUnits
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
IDDrain Current - Continuous (Note 1a) 13 A
- Pulsed 50
PDPower Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)50 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
FDS6670A Rev.E
13 A, 30 V. RDS(ON) = 0.008 Ω @ VGS = 10 V
RDS(ON) = 0.010Ω @ VGS = 4.5 V.
Fast switching speed.
Low gate charge (35 nC tyical).
High performance trench technology for
extremely low RDS(ON).
High power and current handling capability.
SOT-23 SuperSOTTM-8 SOIC-16
SO-8 SOT-223SuperSOTTM-6
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
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6
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8
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4
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5
© 2001 Fairchild Semiconductor Corporation
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 30 V
∆BVDSS/∆TJBreakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC20 mV / oC
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1µA
TJ = 55°C 10 µA
IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA11.6 3V
∆VGS(th)/∆TJGate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC-4.5 mV /oC
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, I D = 13 A0.0063 0.008 Ω
TJ =125°C 0.009 0.014
VGS = 4.5 V, I D = 10.5 A0.0082 0.01
ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V 50 A
gFS Forward Transconductance VDS = 15 V, I D = 13 A 20 50 S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance VDS = 15 V, VGS = 0 V,
f = 1.0 MHz 3200 pF
Coss Output Capacitance 820 pF
Crss Reverse Transfer Capacitance 400 pF
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time VDS = 10 V, I D= 1 A 15 27 ns
tr
Turn - On Rise Ti
VGS = 10 V , RGEN = 6 Ω 15 27 ns
tD(off) Turn - Off Delay Time 85 105 ns
tfTurn - Off Fall Time 42 68 ns
QgTotal Gate Charge VDS = 15 V, I D = 13 A, 35 50 nC
Qgs Gate-Source Charge VGS = 5 V 9nC
Qgd
Gate-Drain Charge 16 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
ISMaximum Continuous Drain-Source Diode Forward Current 2.1 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2)0.71 1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is
guaranteed by design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDS6670A Rev.E
c. 125OC/W on a 0.006 in2 pad
of 2oz copper.
b. 105OC/W on a 0.04 in2
pad of 2oz copper.
a. 50OC/W on a 1 in2 pad
of 2oz copper.
FDS6670A Rev.E
00.5 11.5 2
0
10
20
30
40
50
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
DS
D
2.5V
3.5V
3.0V
V =10V
GS
5.5V
4.5V
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = 10V
GS
I = 13A
D
Figure 3. On-Resistance Variation with
Temperature.
11.5 22.5 33.5 4
0
10
20
30
40
50
60
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 5.0V
DS
GS
D
25°C -55°C
T =125°C
J
Figure 5 . Transfer Characteristics. Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
2 4 6 8 10
0
0.005
0.01
0.015
0.02
0.025
0.03
V , GATE TO SOURCE VOLTAGE (V)
GS
R , ON-RESISTANCE (OHM)
DS(ON)
25°C
I = 6.5A
D
T = 125°C
A
Figure 4 . On Resistance Variation with
Gate-to-Source Voltage.
0 10 20 30 40 50
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 3.0V
GS
D
R , NORMALIZED
DS(ON)
10V
4.5 V
4.0 V
3.5 V
6.0 V
00.2 0.4 0.6 0.8 11.2
0.0001
0.001
0.01
0.1
1
5
40
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
25°C
-55°C
V = 0V
GS
SD
S
T = 125°C
J
FDS6670A Rev.E
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Thermal Characteristics
0.0001 0.001 0.01 0.1 110 100 300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
12
R (t) = r(t) * R
R = 125°C/WθJA
θJA
θJA
T - T = P * R (t)
θJA
A
J
P(pk)
t
1 t
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
0 10 20 30 40 50 60 70 80
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 13A
DV = 5V
DS 10V
15V
0.1 0.2 0.5 1 2 5 10 30
100
200
500
1000
2000
4000
7000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0 V
GS
C
oss
C
rss
0.05 0.1 0.5 1 2 5 10 30 50
0.01
0.05
0.1
0.5
1
2
5
10
30
100
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
RDS(ON) LIMIT
D
A
DC
DS
1s
100ms
10ms
1ms
10s
V =10V
SINGLE PULSE
R = 125°C/W
T = 25°C
θJA
GS
A
100us
0.001 0.01 0.1 1 10 100 300
0
10
20
30
40
50
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R =125°C/W
T = 25°C
θJA
A
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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