DATA SH EET
Product specification
Supersedes data of 2000 Oct 19 2002 Mar 05
DISCRETE SEMICONDUCTORS
BLF2043F
UHF power LDMOS transistor
M3D381
2002 Mar 05 2
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2043F
FEATURES
•High power gain
•Easy power control
•Excellent ruggedness
•Source on mounting base eliminates DC isolators,
reducing common mode inductance
•Designed for broadband operation (HF to 2.2 GHz).
APPLICATIONS
•Communication transmitter applications in the UHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting flange.
PINNING - SOT467C
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
1
3
2
Top view
MBK584
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF OPERATION f
(MHz) VDS
(V) PL
(W) Gp
(dB) ηD
(%) dim
(dBc)
CW, class-AB (2-tone) f1= 2200; f2= 2200.1 26 10 (PEP) >11 >30 ≤−26
SYMBOL PARAMETER MIN. MAX. UNIT
VDS drain-source voltage −65 V
VGS gate-source voltage −±15 V
IDdrain current (DC) −2.2 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature −200 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2002 Mar 05 3
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2043F
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under RF operating conditions.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-mb thermal resistance from junction to mounting base Tmb =25°C; note 1 5 K/W
Rth mb-h thermal resistance from mounting base to heatsink 0.5 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage VGS = 0; ID= 0.2 mA 75 −−V
V
GSth gate-source threshold voltage VDS = 10 V; ID=20mA 4 −5V
I
DSS drain-source leakage current VGS = 0; VDS =26V −−1.5 µA
IDSX on-state drain current VGS =V
GSth +9V; V
DS =10V 2.8 −−A
I
GSS gate leakage current VGS =±15 V; VDS =0 −−40 nA
gfs forward transconductance VDS = 10 V; ID= 0.75 A −0.5 −S
RDSon drain-source on-state resistance VGS = 10 V; ID= 0.75 A −1.2 −Ω
C
is input capacitance VGS = 0; VDS = 26 V; f = 1 MHz −13 −pF
Cos output capacitance VGS = 0; VDS = 26 V; f = 1 MHz −11 −pF
Crs feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz −0.5 −pF
handbook, halfpage
VDS (V)
C
(pF)
0 102030
MGW642
102
10
1
10−1
Cos
Cis
Crs
Fig.2 Input, output and feedback capacitance as
functions of drain-source voltage, typical
values.
VGS = 0; f = 1 MHz.
2002 Mar 05 4
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2043F
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th=25°C; Rth mb-h = 0.4 K/W; unless otherwise specified.
Ruggedness in class-AB operation
The BLF2043F is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: VDS = 26 V; f = 2200 MHz at rated load power.
MODE OF OPERATION f
(MHz) VDS
(V) IDQ
(mA) PL
(W) Gp
(dB) ηD
(%) dim
(dBc)
CW, class-AB (2-tone) f1= 2200; f2= 2200.1 26 85 10 (PEP) >11 >30 ≤−26
handbook, halfpage
Gp
(dB) ηD
(%)
15
10
5
0
60
20
0
40
MGW643
0841216
P
L
(PEP) (W)
Gp
ηD
Fig.3 Power gain and efficiency as functions of
peak envelope load power, typical values.
VDS = 26 V; IDQ = 85 mA;
f1= 2000 MHz; f2= 2000.1 MHz.
handbook, halfpage
dim
(dBc)
08412
d
3
d
5
d
7
16
PL (PEP) (W)
0
−20
−60
−80
−40
MGW644
VDS = 26 V; IDQ = 85 mA; Th≤25 °C;
f1= 2000 MHz; f2= 2000.1 MHz.
Fig.4 Intermodulation distortion as a function of
peak envelope load power; typical values.
2002 Mar 05 5
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2043F
handbook, halfpage
Gp
(dB) ηD
(%)
15
10
5
0
60
20
0
40
MGW645
0841216
P
L
(PEP) (W)
Gp
ηD
Fig.5 Power gain and efficiency as functions of
peak envelope load power, typical values.
VDS = 26 V; IDQ = 85 mA;
f1= 2200 MHz; f2= 2200.1 MHz.
handbook, halfpage
dim
(dBc)
08412
d
3
d
5
d
7
16
PL (PEP) (W)
0
−20
−60
−80
−40
MGW646
VDS = 26 V; IDQ = 85 mA; Th≤25 °C;
f1= 2200 MHz; f2= 2200.1 MHz.
Fig.6 Intermodulation distortion as a function of
peak envelope load power; typical values.
handbook, halfpage
d3
(dBc)
0841216
P
L
(PEP) (W)
0
−20
−60
−40
MGW647
(1)
(2)
(3)
Fig.7 Intermodulation distortion as a function of
peak envelope load power; typical values.
VDS = 26 V; Th≤25 °C;
f1= 2200 MHz; f2= 2200.1 MHz.
(1) IDQ = 115 mA. (2) IDQ = 55 mA. (3) IDQ = 85 mA.
2002 Mar 05 6
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2043F
handbook, halfpage
f (GHz)
Zi
(Ω)
ri
xi
1.8 1.9 2.0 2.1 2.2
8
6
2
0
4
MGW648
Fig.8 Input impedance as a function of frequency
(series components); typical values.
VDS = 26 V; IDQ = 85 mA; PL= 10 W; Th≤25 °C.
Impedance measured at reference planes.
handbook, halfpage
f (GHz)
ZL
(Ω)
RL
XL
1.8 1.9 2.0 2.1 2.2
6
4
2
−2
−4
−6
0
MGW649
Fig.9 Load impedance as a function of frequency
(series components); typical values.
VDS = 26 V; IDQ = 85 mA; PL= 10 W; Th≤25 °C.
Impedance measured at reference planes.
handbook, full pagewidth
MGW650
50 Ω
output
50 Ω
input
VDD
L9
L8
L7
L6
L4
C4C3
C5
C11 C12
C7
C8
C13 C14 C15 C16 C17
C18 C19 C20
C9
L5
R1
C6
L10
C1
C2
Vgate
C10
L3L2L1
Fig.10 Class-AB test circuit for 2.2 GHz.
2002 Mar 05 7
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2043F
List of components (see Figs 10 and 11)
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 100B or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board with Rogers 5880 dielectric (εr= 2.2);
thickness 0.51 mm.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2, C10, C11 multilayer ceramic chip capacitor; note 1 6.8 pF
C3, C4, C7, C9 Tekelec variable capacitor; type 37271 0.6 to 4.5 pF
C5 multilayer ceramic chip capacitor; note 1 2.4 pF
C6, C18 tantalum SMD capacitor 10 µF; 35 V
C8 multilayer ceramic chip capacitor; note 1 1.5 pF
C12, C20 multilayer ceramic chip capacitor; note 2 1 nF
C13 multilayer ceramic chip capacitor; note 1 10 pF
C14 multilayer ceramic chip capacitor; note 1 51 pF
C15 multilayer ceramic chip capacitor; note 1 120 pF
C16 multilayer ceramic chip capacitor 100 nF 2222 581 16641
C17 electrolytic capacitor 47 µF; 35 V 2222 036 90094
C19 electrolytic capacitor 100 µF; 63 V 2222 037 58101
L1, L8 stripline; note 3 50 Ω4×1.5 mm
L2 stripline; note 3 50 Ω7×1.5 mm
L3 stripline; note 3 58.1 Ω12 ×1.2 mm
L4 stripline; note 3 11.3 Ω9×10 mm
L5 stripline; note 3 11.3 Ω11.5 ×10 mm
L6 stripline; note 3 52.8 Ω11 ×1.4 mm
L7 stripline; note 3 50 Ω5.5 ×1.5 mm
L9 stripline; note 3 64.7 Ω38 ×1mm
L10 2 turns enamelled 0.5 mm copper wire int. dia. = 3 mm;
length = 3 mm
R1 metal film resistor 390 Ω; 0.6 W 2322 156 11009
2002 Mar 05 8
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2043F
handbook, full pagewidth
BLF2043F 2.2 GHz output
BLF2043F 2.2 GHz input
C10
C8
C17
C16
C15
C14
C13
C18
L10
VDD
C19
C20
C11 C12
Vgate C5
C2
C1 R3
C4 C7
C9
C3
BLF2043F 2.2 GHz output
BLF2043F 2.2 GHz input
MGU555
33
60
C6
60
33
Fig.11 Component layout for 2.2 GHz class-AB test circuit.
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr= 2.2), thickness 0.51 mm.
The other side is unetched and serves as a ground plane.
2002 Mar 05 9
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2043F
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT467C 99-12-06
99-12-28
0 5 10 mm
scale
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
0.15
0.10
5.59
5.33 9.25
9.04 1.65
1.40 18.54
17.02
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
3.43
3.18
4.67
3.94 2.21
1.96
D
D1
U1
1
3
2
A
U2E
E1
p
b
H
Q
F
c
UNIT Q
cD
9.27
9.02
D1
5.92
5.77
E
5.97
5.72
E1FH p q
mm
0.184
0.155
inch
b
14.27 20.45
20.19
U2
U1
5.97
5.72 0.25
w1
0.51
0.006
0.004
0.220
0.210 0.364
0.356 0.065
0.055 0.73
0.67 0.135
0.125 0.087
0.077
0.365
0.355 0.233
0.227 0.235
0.225 0.562 0.805
0.795 0.235
0.225 0.010 0.020
w2
A
M M
C
C
Aw1
w2
AB
M M M
q
B
SOT467C
2002 Mar 05 10
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2043F
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing orsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyofthese products,conveys nolicence ortitle
under any patent, copyright, or mask work right to these
products,and makes norepresentationsor warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2002 Mar 05 11
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2043F
NOTES
© Koninklijke Philips Electronics N.V. 2002 SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613524/02/pp12 Date of release: 2002 Mar 05 Document order number: 9397 750 09171
