MCC 310 MCD 310 ITRMS = 2x 500 A ITAVM = 2x 320 A VRRM = 800-1800 V Thyristor Modules Thyristor/Diode Modules 3 VRSM VDSM VRRM VDRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 1 Version 1 Version 1 MCC 310-08io1 MCC 310-12io1 MCC 310-14io1 MCC 310-16io1 MCC 310-18io1 MCD 310-08io1 MCD 310-12io1 MCD 310-14io1 MCD 310-16io1 MCD 310-18io1 Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85C; 180 sine ITSM, IFSM TVJ = 45C; VR = 0 oi2dt (di/dt)cr 76 2 Type Maximum Ratings 500 320 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 9200 9800 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 8000 8600 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 420 000 400 000 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 320 000 306 000 A2s A2s 100 A/ms TVJ = TVJM repetitive, IT = 960 A f =50 Hz, tP =200 ms VD = 2/3 VDRM IG = 1 A non repetitive, IT = 320 A diG/dt = 1 A/ms 5 4 3 6 7 1 5 4 2 3 1 5 4 2 MCC MCD Features International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 Keyed gate/cathode twin pins 500 A/ms (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) PGM TVJ = TVJM IT = ITAVM 1000 V/ms PGAV 120 60 20 W W W VRGM 10 V TVJ TVJM Tstg -40...+140 140 -40...+125 C C C 3000 3600 V~ V~ VISOL 50/60 Hz, RMS IISOL 1 mA tP = 30 ms tP = 500 ms t = 1 min t=1s Applications Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Mounting torque (M5) Terminal connection torque (M8) Weight Typical including screws 2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved 320 g 030 Md 1-4 MCC 310 MCD 310 Symbol Test Conditions IRRM IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT, IF = 600 A; TVJ = 25C 1.32 V VT0 rT For power-loss calculations only (TVJ = 140C) 0.8 0.82 V mW VGT VD = 6 V; IGT VD = 6 V; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C 2 3 150 200 V V mA mA VGD IGD TVJ = TVJM; VD = 2/3 VDRM 0.25 10 V mA IL TVJ = 25C; tP = 30 ms; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/ms 200 mA IH TVJ = 25C; VD = 6 V; RGK = 150 mA tgd TVJ = 25C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/ms 2 ms tq TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms VR = 100 V; dv/dt = 50 V/ms; VD = 2/3 VDRM QS IRM TVJ = 125C; IT, IF = 400 A, -di/dt = 50 A/ms RthJC per per per per RthJK dS dA a Characteristic Values thyristor/diode; DC current module thyristor/diode; DC current module Creepage distance on surface Strike distance through air Maximum allowable acceleration 70 40 other values see Fig. 8/9 mA mA typ. 200 ms 760 275 mC A 0.112 0.056 0.152 0.076 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 Fig. 1 Gate trigger characteristics Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") MCC MCD Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass 20 12 14 (c) 2000 IXYS All rights reserved 2-4 MCC 310 MCD 310 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 oi2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature (c) 2000 IXYS All rights reserved 3-4 MCC 310 MCD 310 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 0.15 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) K/W ZthJC 30 DC RthJC for various conduction angles d: 0.10 0.05 d RthJC (K/W) DC 180C 120C 60C 30C 0.112 0.113 0.114 0.115 0.115 Constants for ZthJC calculation: i 0.000 10-3 10-2 10-1 100 101 102 s t 0.20 1 2 3 Rthi (K/W) ti (s) 0.003 0.0143 0.0947 0.099 0.168 0.456 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) K/W ZthJK 30 DC 0.15 RthJK for various conduction angles d: 0.10 d RthJK (K/W) DC 180C 120C 60C 30C 0.152 0.154 0.154 0.155 0.155 0.05 Constants for ZthJK calculation: i 0 0.00 10-3 10-2 10-1 100 101 s t 102 1 2 3 4 Rthi (K/W) ti (s) 0.003 0.0143 0.0947 0.04 0.099 0.168 0.456 1.36 835 (c) 2000 IXYS All rights reserved 4-4