HybridPACK™DriveModule
FS820R08A6P2B
FinalDataSheet
V3.0,2017-03-09
AutomotiveHighPower
2
FS820R08A6P2B
HybridPACK™DriveModule
V3.0,2017-03-09Final Data Sheet
1Features/Description
HybridPACK™DrivemodulewithEDT2IGBTandDiode
T
T
T
VCES = 750V
IC nom = 820A / ICRM = 1640A
TypicalApplications Description
The HybridPACKTM Drive is a very compact
six-pack module (750V/820A) optimized for hybrid
and electric vehicles. The power module
implements the new EDT2 IGBT generation, which
is an automotive Micro-Pattern Trench-Field-Stop
cell design optimized for electric drive train
applications. The chipset has benchmark current
density combined with short circuit ruggedness and
increased blocking voltage for reliable inverter
operation under harsh environmental conditions.
The EDT2 IGBTs also show excellent light load
power losses, which helps to improve system
efficiency over a real driving cycle. The EDT2 IGBT
was optimized for applications with switching
frequencies in the range of 10 kHz.
The new HybridPACKTM Drive power module family
comes with mechanical guiding elements
supporting easy assembly processes for customers.
Furthermore, the press-fit pins for the signal
terminals avoid additional time consuming selective
solder processes, which provides cost savings on
system level and increases system reliability. The
direct cooled baseplate with PinFin structure in the
FS820R08A6P2B product best utilizes the
implemented chipset and shows superior thermal
characteristics. Due to the high clearance &
creepage distances, the module family is also well
suited for increased system working voltages and
supports modular inverter approaches.
• AutomotiveApplications
• HybridElectricalVehicles(H)EV
• MotorDrives
• CommercialAgricultureVehicles
ElectricalFeatures
• Blockingvoltage750V
• LowVCEsat
• LowSwitchingLosses
• LowQgandCres
• LowInductiveDesign
• Tvjop=150°C
•Short-time extended Operation Temperature 
Tvjop=175°C
MechanicalFeatures
• 4.2kVDC1secInsulation
• HighCreepageandClearanceDistances
• Compactdesign
• HighPowerDensity
• DirectCooledBasePlate
• GuidingelementsforPCBandcoolerassembly
• IntegratedNTCtemperaturesensor
• PressFITContactTechnology
• RoHScompliant
• UL94V0moduleframe
ProductName OrderingCode
FS820R08A6P2B SP001499708
3
FS820R08A6P2B
HybridPACK™DriveModule
V3.0,2017-03-09Final Data Sheet
2IGBT,Inverter
2.1MaximumRatedValues
Parameter Conditions Symbol Value Unit
Collector-emittervoltage Tvj = 25°C VCES 750 V
Implementedcollectorcurrent ICN 820 A
ContinuousDCcollectorcurrent TF = 80°C, Tvj max = 175°C IC nom 4501) A
Repetitivepeakcollectorcurrent tP = 1 ms ICRM 1640 A
Totalpowerdissipation TF = 75°C, Tvj max = 175°C Ptot 7141) W
Gate-emitterpeakvoltage VGES +/-20 V
2.2CharacteristicValues min. typ. max.
Collector-emittersaturationvoltage IC = 450 A, VGE = 15 V
IC = 450 A, VGE = 15 V
IC = 450 A, VGE = 15 V
IC = 820 A, VGE = 15 V Tvj = 25°C
IC = 820 A, VGE = 15 V Tvj = 175°C
VCE sat
1.10
1.15
1.15
1.30
1.50
1.35
V
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
Gatethresholdvoltage IC = 9.60 mA, VCE = VGE
 Tvj = 175°C VGEth 4.90 5.80
4,10
6.50 V
Tvj = 25°C
Gatecharge VGE = -8 V ... 15 V, VCE = 400V QG4.40 µC
Internalgateresistor RGint 0.7 ΩTvj = 25°C
Inputcapacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Cies 80.0 nFTvj = 25°C
Outputcapacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Coes 1.00 nFTvj = 25°C
Reversetransfercapacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Cres 0.30 nFTvj = 25°C
Collector-emittercut-offcurrent VCE = 750 V, VGE = 0 V
VCE = 750 V, VGE = 0 V Tvj = 175°C ICES 5
1.0 mA
Tvj = 25°C
Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V IGES 400 nATvj = 25°C
Turn-ondelaytime,inductiveload IC = 450 A, VCE = 400 V
VGE = -8 V / +15 V
RGon = 2.4 Ωtd on
0.28
0.29
0.30
µs
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
Risetime,inductiveload IC = 450 A, VCE = 400 V
VGE = -8 V / +15 V
RGon = 2.4 Ωtr
0.07
0.08
0.08
µs
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
Turn-offdelaytime,inductiveload IC = 450 A, VCE = 400 V
VGE = -8 V / +15 V
RGoff = 5.1 Ωtd off
0.94
1.05
1.05
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Falltime,inductiveload IC = 450 A, VCE = 400 V
VGE = -8 V / +15 V
RGoff = 5.1 Ωtf
0.04
0.05
0.06
µs
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
Turn-onenergylossperpulse IC = 450 A, VCE = 400 V, LS = 20 nH
VGE = -8 V / +15 V
RGon = 2.4 Ω
di/dt (Tvj 25°C) = 5500 A/µs
di/dt (Tvj 150°C) = 5000 A/µs
Eon
13.5
17.5
18.0 mJ
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
Turn-offenergylossperpulse IC = 450 A, VCE = 400 V, LS = 20 nH
VGE = -8 V / +15 V
RGoff = 5.1 Ω
dv/dt (Tvj 25°C) = 3100 V/µs
dv/dt (Tvj 150°C) = 2500 V/µs
Eoff
23.5
29.0
30.0 mJ
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
SCdata VGE ≤ 15 V, VCC = 400 V
VCEmax = VCES -LsCE ·di/dt ISC 4800
3900 A
Tvj = 25°C
Tvj = 175°C
tP ≤ 6 µs,
tP ≤ 3 µs,
Thermalresistance,junctiontocoolingfluid perIGBT;∆V/∆t=10dm³/min,TF=75°C RthJF 0.1202) 0.1402) K/W
Temperatureunderswitchingconditions top continuous
for 10s within a period of 30s, occurence maximum 3000
times over lifetime
Tvj op
-40
150
1503)
175
°C
1) Verified by characterization / design not by test.
2) Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol.
3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.
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FS820R08A6P2B
HybridPACK™DriveModule
V3.0,2017-03-09Final Data Sheet
3Diode,Inverter
3.1MaximumRatedValues
Parameter Conditions Symbol Value Unit
Repetitivepeakreversevoltage Tvj = 25°C VRRM 750 V
Implementedforwardcurrent IFN 820 A
ContinuousDCforwardcurrent IF4501) A
Repetitivepeakforwardcurrent tP = 1 ms IFRM 1640 A
I²t-value VR = 0 V, tP = 10 ms, Tvj = 150°C
VR = 0 V, tP = 10 ms, Tvj = 175°C I²t 19000
16000
A²s
A²s
3.2CharacteristicValues min. typ. max.
Forwardvoltage IF = 450 A, VGE = 0 V
IF = 450 A, VGE = 0 V
IF = 450 A, VGE = 0 V
IF = 820 A, VGE = 0 V Tvj = 25°C
IF = 820 A, VGE = 0 V Tvj = 175°C
VF
1.45
1.30
1.25
1.70
1.60
1.65
V
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
Peakreverserecoverycurrent IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C)
VR = 400 V
VGE = -8 V
IRM
250
350
370
A
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
Recoveredcharge IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C)
VR = 400 V
VGE = -8 V
Qr
20.0
40.0
45.0
µC
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
Reverserecoveryenergy IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C)
VR = 400 V
VGE = -8 V
Erec
7.00
13.0
15.0
mJ
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
Thermalresistance,junctiontocoolingfluid perdiode;∆V/∆t=10dm³/min,TF=75°C RthJF 0.1752) 0.2002) K/W
Temperatureunderswitchingconditions top continuous
for 10s within a period of 30s, occurence maximum 3000
times over lifetime
Tvj op
-40
150
1503)
175
°C
4NTC-Thermistor min. typ. max.
Parameter Conditions Symbol Value Unit
Ratedresistance TC = 25°C R25 5.00 kΩ
DeviationofR100 TC = 100°C, R100 = 493 Ω ∆R/R 5 5 %
Powerdissipation TC = 25°C P25 20.0 mW
B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K
B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K
B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K
Specificationaccordingtothevalidapplicationnote.
1) Verified by characterization / design not by test.
2) Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol.
3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.
5
FS820R08A6P2B
HybridPACK™DriveModule
V3.0,2017-03-09Final Data Sheet
5Module
Parameter Conditions Symbol Value Unit
Isolationtestvoltage RMS, f = 0 Hz, t = 1 sec VISOL 4.2 kV
Materialofmodulebaseplate Cu+Ni1)
Internalisolation basicinsulation(class1,IEC61140) Al2O32)
Creepagedistance terminaltoheatsink
terminaltoterminal dCreep 9.0
9.0 mm
Clearance terminaltoheatsink
terminaltoterminal dClear 4.5
4.5 mm
Comperativetrackingindex CTI > 200
min. typ. max.
Pressuredropincoolingcircuit ∆V/∆t = 10.0 dm³/min; TF = 75°C ∆p 643) mbar
Maximumpressureincoolingcircuit Tbaseplate < 40°C
Tbaseplate > 40°C
(relative pressure)
p
2.5
2.0
bar
Strayinductancemodule LsCE 8.0 nH
Moduleleadresistance,terminals-chip TF=25°C,perswitch RCC'+EE' 0.75 mΩ
Storagetemperature Tstg -40 125 °C
Mountingtorqueformodulmounting ScrewM4baseplatetoheatsink
ScrewEJOTDeltaPCBtoframe M1.80
0.45
2.00
0.50
2.20
0.554) Nm
Weight G 800 g
Maximum RMS module terminal current Tf = 75°C; TCt = 105°C ItRMS 500 A
1) Ni plated Cu baseplate.
2) Improved Al2O3 ceramic.
3) Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol.
4) EJOT Delta PT WN 5451 30x10. Effective mounting torque according to application note AN-HPD-ASSEMBLY
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FS820R08A6P2B
HybridPACK™DriveModule
V3.0,2017-03-09Final Data Sheet
6CharacteristicsDiagrams
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
VCE [V]
IC [A]
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
VCE [V]
IC [A]
0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 4,0
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
VGE [V]
IC [A]
5 6 7 8 9 10 11 12
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC),
VGE=+15V/-8V,RGon=2.4Ω,RGoff=5.1Ω,VCE=400V
IC [A]
E [mJ]
0 100 200 300 400 500 600 700 800 900
0
10
20
30
40
50
60
70
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
Eon, Tvj = 175°C
Eoff, Tvj = 175°C
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FS820R08A6P2B
HybridPACK™DriveModule
V3.0,2017-03-09Final Data Sheet
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG),
VGE=+15V/-8V,IC=450A,VCE=400V
RG [Ω]
E [mJ]
0 2 4 6 8 10 12 14 16 18 20 22 24
0
20
40
60
80
100
120
140
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
Eon, Tvj = 175°C
Eoff, Tvj = 175°C
transientthermalimpedanceIGBT,Inverter
ZthJF=f(t),coolerdesignaccordingtoAN-HPD-ASSEMBLY
∆V/∆t=10dm³/min;Tf=75°C;50%water/50%ethylenglycol
t [s]
ZthJF [K/W]
0,001 0,01 0,1 1 10
0,001
0,01
0,1
1
ZthJF : IGBT
i:
ri[K/W]:
τi[s]:
1
0,005
0,001
2
0,05
0,03
3
0,065
0,25
4
0,02
1,5
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=+15V/-8V,RGoff=5,1Ω,Tvj=175°C
VCE [V]
IC [A]
0 100 200 300 400 500 600 700 800
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
IC, Modul
IC, Chip
thermalimpedanceIGBT,Inverter
RthJF=f(∆V/∆t),coolerdesignaccordingtoAN-HPD-Assembly
Tf=75°C;50%water/50%ethylenglycol
∆V/∆t [dm³/min]
RthJF [K/W]
4 5 6 7 8 9 10 11 12 13 14
0,134
0,136
0,138
0,140
0,142
0,144
0,146
0,148
0,150
0,152
RthJF: IGBT
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FS820R08A6P2B
HybridPACK™DriveModule
V3.0,2017-03-09Final Data Sheet
capacitycharcteristicIGBT,Inverter(typical)
C=f(VCE)
VGE=0V,Tvj=25°C,f=1MHz
VCE [V]
C [nF]
0 100 200 300 400 500
0,1
1
10
100
Cies
Coes
Cres
gatechargecharacteristicIGBT,Inverter(typical)
VGE=f(QG)
VCE=400V,IC=450A,Tvj=25°C
QG [µC]
VGE [V]
0 1 2 3 4 5
-9
-6
-3
0
3
6
9
12
15
QG
maximumallowedcollector-emittervoltage
VCES = f(Tvj), verified by characterization / design not by test
ICES = 1 mA for Tvj ≤ 25°C; ICES = 30 mA for Tvj > 25°C
Tvj [°C]
VCES [V]
-50 -25 0 25 50 75 100 125 150 175 200
650
675
700
725
750
775
800
VCES
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
VF [V]
IF [A]
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
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FS820R08A6P2B
HybridPACK™DriveModule
V3.0,2017-03-09Final Data Sheet
switchinglossesDiode,Inverter(typical)
Erec=f(IF),
RGon=2.4Ω,VCE=400V
IF [A]
E [mJ]
0 100 200 300 400 500 600 700 800 900
0
2
4
6
8
10
12
14
16
18
20
22
Erec, Tvj = 150°C
Erec, Tvj = 175°C
switchinglossesDiode,Inverter(typical)
Erec=f(RG),
IF=450A,VCE=400V
RG [Ω]
E [mJ]
0 2 4 6 8 10 12 14 16 18 20 22 24
0
2
4
6
8
10
12
14
16
18
20
Erec, Tvj = 150°C
Erec, Tvj = 175°C
transientthermalimpedanceDiode,Inverter
ZthJF=f(t),coolerdesignaccordingtoAN-HPD-ASSEMBLY
∆V/∆t=10dm³/min;Tf=75°C;50%water/50%ethylenglycol
t [s]
ZthJC [K/W]
0,001 0,01 0,1 1 10
0,001
0,01
0,1
1
ZthJC : Diode
i:
ri[K/W]:
τi[s]:
1
0,015
0,001
2
0,1
0,03
3
0,065
0,25
4
0,02
1,5
thermalimpedanceDiode,Inverter
RthJF=f(∆V/∆t),coolerdesignaccordingtoAN-HPD-ASSEMBLY
Tf=75°C;50%water/50%ethylenglycol
∆V/∆t [dm³/min]
RthJF [K/W]
4 5 6 7 8 9 10 11 12 13 14
0,194
0,196
0,198
0,200
0,202
0,204
0,206
0,208
0,210
0,212
0,214
RthJF: Diode
10
FS820R08A6P2B
HybridPACK™DriveModule
V3.0,2017-03-09Final Data Sheet
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
TC [°C]
R[Ω]
0 20 40 60 80 100 120 140 160
100
1000
10000
100000
Rtyp
pressuredropincoolingcircuit
∆p=f(∆V/∆t),coolerdesignaccordingtoAN-HPD-ASSEMBLY
Tf=75°C;50%water/50%ethylenglycol
∆V/∆t [dm³/min]
∆p [mbar]
4 5 6 7 8 9 10 11 12 13 14
0
20
40
60
80
100
120
∆p: Modul
11
FS820R08A6P2B
HybridPACK™DriveModule
V3.0,2017-03-09Final Data Sheet
7Circuitdiagram
G1
E1
C1
G2
E2
C2
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1
N1
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E3
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G4
E4
C4
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N2
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E5
C5
G6
E6
C6
P3
3
N3
T
T11
T12
T
T21
T22
T
T31
T32
12
FS820R08A6P2B
HybridPACK™DriveModule
V3.0,2017-03-09Final Data Sheet
8Packageoutlines
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13
FS820R08A6P2B
HybridPACK™ Drive Module
V3.0, 2017-03-09Final Data Sheet
9 Label Codes
9.1 Module Code
Code Format Data Matrix
Encoding ASCII Text
Symbol Size 16x16
Standard IEC24720 and IEC16022
Code Content Content
Module Serial Number
Module Material Number
Production Order Number
Datecode (Production Year)
Datecode (Production Week)
Digit
1 - 5
6 - 11
12 - 19
20 - 21
22 - 23
Example (below)
71549
142846
55054991
15
30
Example
71549142846550549911530
9.2 Packing Code
Code Format Code128
Encoding Code Set A
Symbol Size 34 digits
Standard IEC8859-1
Code Content Content
Backend Construction Number
Production Lot Number
Serial Number
Date Code
Box Quantity
Identifier
X
1T
S
9D
Q
Digit
2 - 9
12 - 19
21 - 25
28 - 31
33 - 34
Example (below)
95056609
2X0003E0
754389
1139
15
Example
X950566091T2X0003E0S754389D1139Q15
14
FS820R08A6P2B
HybridPACK™ Drive Module
V3.0, 2017-03-09Final Data Sheet
Revision History
Major changes since previous revision
Revision History
Reference Date Description
V1.2 2016-01-14 Increased ICRM and minor revisions, based on FS660R08A6P2B revision 1.1
V2.0 2016-11-24 Preliminary datasheet 2.0
V3.0 2017-03-09 Final datasheet 3.0
15
FS820R08A6P2B
HybridPACK™ Drive Module
V3.0, 2017-03-09Final Data Sheet
Terms & Conditions of usage
Edition 2014-05-30
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™,
PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™,
SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
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Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION
FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor
Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO.,
MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave
Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun
Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited.
VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of
WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.
Last update 2011-11-11
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Published by Infineon Technologies AG