DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor Product data sheet 2003 Jul 22 NXP Semiconductors Product data sheet 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M FEATURES QUICK REFERENCE DATA * Low collector-emitter saturation voltage VCEsat SYMBOL * High collector current capability IC and ICM VCEO collector-emitter voltage 40 V IC collector current (DC) 500 mA ICM peak collector current 1 A RCEsat equivalent on-resistance <500 m * High efficiency leading to reduced heat generation * Reduced printed-circuit board requirements. PARAMETER MAX. UNIT APPLICATIONS PINNING * Power management: - DC-DC converter PIN DESCRIPTION - Supply line switching 1 base - Battery charger 2 emitter - LCD backlighting. 3 collector * Peripheral driver: - Driver in low supply voltage applications (e.g. lamps and LEDs). - Inductive load drivers (e.g. relays, buzzers and motors). 3 handbook, halfpage 2 DESCRIPTION 1 3 Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. 1 2 Bottom view MAM475 MARKING TYPE NUMBER PBSS2540M 2003 Jul 22 MARKING CODE Fig.1 Simplified outline (SOT883) and symbol. DC 2 NXP Semiconductors Product data sheet 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 40 V VCEO collector-emitter voltage open base - 40 V VEBO emitter-base voltage open collector - 6 V IC collector current (DC) notes 1 and 2 - 500 mA ICM peak collector current - 1 A IBM peak base current - 100 mA Ptot total power dissipation Tamb 25 C; notes 1 and 2 - 250 mW Tamb 25 C; note 1 and 3 - 430 mW Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Notes 1. Refer to SOT883 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 m copper strip line. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE UNIT in free air; notes 1 and 2 500 K/W in free air; notes 1, 3 and 4 290 K/W Notes 1. Refer to SOT883 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 m copper strip line. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 4. Operated under pulsed conditions: duty cycle 20%, pulse width tp 30 ms. Soldering Reflow soldering is the only recommended soldering method. 2003 Jul 22 3 NXP Semiconductors Product data sheet 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = 30 V; IE = 0 - - 100 nA VCB = 30 V; IE = 0; Tj = 150 C - - 50 A nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 - - 100 hFE DC current gain VCE = 2 V; IC = 10 mA 200 - - VCE = 2 V; IC = 100 mA; note 1 150 - - VCE = 2 V; IC = 500 mA; note 1 50 - - collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 50 mV IC = 100 mA; IB = 5 mA - - 100 mV IC = 200 mA; IB = 10 mA; note 1 - - 200 mV VCEsat IC = 500 mA; IB = 50 mA; note 1 - - 250 mV RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 - 380 <500 m VBEsat base-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 - - 1.2 V VBEon base-emitter turn-on voltage VCE = 2 V; IC = 100 mA; note 1 - - 1.1 V fT transition frequency IC = 100 mA; VCE = 5 V; f = 100 MHz 250 450 - MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz - - 6 pF Note 1. Pulse test: tp 300 s; 0.02. 2003 Jul 22 4 NXP Semiconductors Product data sheet 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M MHC082 1200 MHC085 1200 handbook, halfpage handbook, halfpage VBE (mV) hFE 1000 1000 (1) 800 (1) 800 600 (2) (2) 600 400 (3) 400 200 0 10-1 1 10 102 IC (mA) (3) 200 10-1 103 VCE = 2 V. VCE = 2 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MHC086 103 handbook, halfpage 1 10 102 IC (mA) 103 Base-emitter voltage as a function of collector current; typical values. MHC084 1200 handbook, halfpage VBEsat (mV) VCEsat (mV) 1000 (1) 800 102 (2) (1) 600 (2) (3) 10 10-1 1 10 102 (3) 400 IC (mA) 200 10-1 103 IC/IB = 20. IC/IB = 20. (1) Tamb = 150 C. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2003 Jul 22 5 1 10 102 IC (mA) 103 Base-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M MHC083 1200 IC (mA) 1000 RCEsat () (1) (2) (3) (5) 800 MHC087 103 handbook, halfpage handbook, halfpage 102 (4) (6) (7) (8) 10 (9) 600 (10) (1) (2) (3) 400 1 200 10-1 10-1 0 0 1 2 3 4 5 VCE (V) Tamb = 25 C. (1) (2) (3) (4) IB = 25 mA. IB = 22.5 mA. IB = 20 mA. IB = 17.5 mA. IB = 15 mA. IB = 12.5 mA. IB = 10 mA. IB = 7.5 mA. 102 IC (mA) 103 (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. (9) IB = 5 mA. (10) IB = 2.5 mA. Collector current as a function of collector-emitter voltage; typical values. 2003 Jul 22 10 IC/IB = 20. (5) (6) (7) (8) Fig.7 Fig.6 1 6 Collector-emitter equivalent on-resistance as a function of collector current; typical values. NXP Semiconductors Product data sheet 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION SOT883 2003 Jul 22 REFERENCES IEC JEDEC JEITA SC-101 7 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 NXP Semiconductors Product data sheet 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2003 Jul 22 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp9 Date of release: 2003 Jul 22 Document order number: 9397 750 11559