Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Linear Integrated Systems
SD-SST211/213/215
N-CHANNEL LATERAL
DMOS SWITCH
ZENER PROTECTED
Product Summary
Features Benefits Applications
• Ultra-High Speed Switching—tON: 1 ns • High-Speed System Performance • Fast Analog Switch
• Ultra-Low Reverse Capacitance: 0.2 pF • Low Insertion Loss at High Frequencies • Fast Sample-and-Holds
• Low Guaranteed rDS @5 V • Low Transfer Signal Loss • Pixel-Rate Switching
• Low Turn-On Threshold Voltage • Simple Driver Requirement • DAC Deglitchers
• N-Channel Enhancement Mode • Single Supply Operation • High-Speed Driver
Description
The SD211DE/SST211 series consists of enhancement-mode
MOSFETs designed for high speed low-glitch switching in audio,
video, and high-frequency applications. The SD211 may be used
for ±5-V analog switching or as a high speed driver of the SD214.
The SD214 is normally used for ±10-V analog switching. These
MOSFETs utilize lateral construction to achieve low capacitance
and ultra-fast switching speeds. An integrated Zener diode
provides ESD protection. These devices feature a poly-silicon
gate for manufacturing reliability.
For similar products see: quad array—SD5000/5400 series, and
non-Zener protection—SD210DE/214DE.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Absolute Maximum Ratings (TA = 250C Unless Otherwise Noted)
Gate-Drain, Gate-Source Voltage (SD211DE/SST211) ................... -30/25 V
(SD213DE/SST213) .................. -15/25 V
(SD215DE/SST215) .................. -25/30 V
Gate-Substrate Voltagea(SD211DE/SST211 ................... -0.3/25 V
(SD213DE/SST213) ................. -0.3/25 V
(SD215DE/SST215) ................. -0.3/30 V
Drain-Source Voltage (SD211DE/SST211) .......................... 30 V
(SD213DE/SST213) ......................... 10 V
(SD215DE/SST215) ......................... 20 V
Source-Drain Voltage (SD211DE/SST21) ........................... 10 V
(SD213DE/SST213) ......................... 10 V
(SD215DE/SST215) ......................... 20 V
Drain-Substrate Voltage (SD211DE/SST211) .......................... 30 V
(SD213DE/SST213) ......................... 15 V
(SD215DE/SST215) ......................... 25 V
Source-Substrate Voltage (SD211DE/SST211) .......................... 15 V
(SD213DE/SST213) ......................... 15 V
(SD215DE/SST215) ......................... 25 V
Drain Current ........................................................................................ 50 mA
Lead Temperature (1/16” from case for 10 seconds) ............................. 3000C
Storage Temperature .................................................................... -65 to 1500C
Operating Junction Temperature ................................................. -55 to 1250C
Power Dissipationa.................................................................................................................................... 300 mW
Notes:
a. Derate 3 mW/0C above 250C
Specificationsa
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Specificationsa
Notes:
a. TA = 250C unless otherwise noted.
b. B is the body (substrate) and V(BR) is breakdown.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
