T4M3F-B SERIES
MAXIMUM RATINGS
(Tj= 25
℃
unless otherwise noticed)
FEATURES
Passivated Die for Reliability and Uniformity
Four-Quadrant Triggering
Blocking Voltage to 600 V
On-State Current Rating of 4.0 Amperes RMS at 93°C
Low Level Triggering and Holding Characteristics
Sensitive Gate Triacs
Sillicon Bidirectional Thyristors
TRIACS
4 AMPERES RMS
600 thru 800 VOLTS
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage (
T
J
= -40 to 110
℃
, Sine Wave, 50 to 60 Hz; Gate Open)
V
DRM
,
V
RRM
600
800 Volts
On-State RMS Current (Full cycles sine wave, 60Hz,Tc = 93
℃
) I
T(RMS)
4Amp
Peak Non-Repetitive Surge Current (One full cycle 60Hz, Tj=110
℃
)I
TSM
40 Amps
Circuit Fusing Consideration (t = 8.3ms) I t 6.6 A s
Peak Gate Power (Pulse Width<=10usec,
TC =93
℃
)P
GM
0.5 Watt
Average Gate Power (t=8.3 msec, TC = 93
℃
)P
G(AV)
0.1 Watt
Peak Gate Current (
Pulse Width 10usec,TC =93
≦
℃
)I
GM
0.2 Amp
Peak Gate Voltage (Pulse Width 10usec,
≦
TC =93
℃
)V
GM
5.0 Volts
Operating Junction Temperature Range
T
J
-40 to +125
℃
Storage Temperature Range Tstg -40 to +150
℃
22
REV. 1, Jul-2004, KTXC02
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SEMICONDUCTOR
LITE-ON
T4M3F600B
T4M3F800B
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B14.22 15.88
10.67 9.65
2.54 3.43
6.86 5.84
8.26 9.28
- 6.35
12.70 14.73
0.51 2.79
N
M
L
K
J
I 1.14
2.29
0.64 0.30
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.03
1Main Terminal 1
2Main Terminal 2
3Gate
4Main Terminal 2
PIN ASSIGNMENT
A
B
C
K
J
I
G
F
E
D
N
M
L
PIN
1 32
RATING AND CHARACTERISTIC CURVES
T4M3F-B SERIES
Characteristic Symbol Value Unit
Thermal Resistance - Junction to Case
- Junction to Ambient RthJC
RthJA 2.2
62.5 /W
℃
Maximum Lead Temperature for Soldering Purposes (1/8" from Case for 10 Seconds)
T
L
260
℃
Characteristics Symbol Min Typ Max Unit
Peak Reptitive Forward or Reverse Blocking Current T
J
=25
℃
(V
D
=Rated V
DRM
and V
RRM
, Gate Open) T
J
=125
℃
I
DRM
I
RRM
----
---- ----
----
10
2.0 uA
mA
Peak Forward On-State Voltage
(I
TM=
±6.0A Peak @Tp 2.0 ms, Duty Cycle 2%)
≦ ≦
V
TM
---- 1.3 1.6 Volts
Gate Trigger Current (Continuous dc)
(V
D
= 12 V, R
L
= 100 Ohms)
I
GT1
I
GT2
I
GT3
I
GT4
----
----
----
----
1.8
2.1
2.4
4.2
3.0
3.0
3.0
5.0
mA
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 V, R
L
=100 Ohms)
V
GT1
V
GT2
V
GT3
V
GT4
0.5
0.5
0.5
0.5
0.62
0.57
0.65
0.74
1.3
1.3
1.3
1.3
Volts
Holding Current (V
D
= 12V, Initiating Current = ±200 mA, Gate Open) I
H
---- 1.5 15 mA
Gate Non - Trigger Voltage (Continuous dc)
(V
D
= V
DRM,
RL =100 Ohms, T
J
=110
℃
V
GD
0.1 0.4 ---- Volts
Latching Current (V
D
= 12V, I
G
= 5.0 mA)
I
L1
I
L2
I
L3
I
L4
----
----
----
----
1.75
5.2
2.1
2.2
10
10
10
10
mA
Rate of Change of Commutating Current (V
D
= 200 V, I
TM
= 1.8 A,
Commutating dv/dt = 1.0 V/usec, T
J
= 110
℃
, f = 250 Hz, CL= 5.0 ufd,
LL=80 mH, RS= 56 Ohms, CS= 0.03 ufd) with snubber di/dt (c) ---- 3.0 ---- A/ms
Critical Rate of Rise of Off-State Voltage
(V
D
= 0.67 X Rated V
DRM
, Exponential Waveform,
Gate Open, T
J
= 110
℃
)dv/dt 10 ---- ---- V/us
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
J
=25 unless otherwise noted)
℃
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
REV. 1, Jul-2004, KTXC02
Quadrant Definitions
All polarities are referenced to MT1
Whith in -phase signal (using standard AC lines) quadrants I and III are used
RATING AND CHARACTERISTIC CURVES
T4M3F-B SERIES
REV. 1, Jul-2004, KTXC02
RATING AND CHARACTERISTIC CURVES
T4M3F-B SERIES
REV. 1, Jul-2004,KTXC02
RATING AND CHARACTERISTIC CURVES
T4M3F-B SERIES
REV. 1, Jul-2004, KTXC02
Specifications mentioned in this publication are subject to change without notice.
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