BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
1
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●Designed for Complementary Use with
BDW94, BDW94A, BDW94B and BDW94C
●80 W at 25°C Case Temperature
●12 A Continuous Collector Current
●Minimum hFE of 750 at 3 V, 5 A
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
BDW93
BDW93A
BDW93B
BDW93C
VCBO
45
60
80
100
V
Collector-emitter voltage (IB = 0)
BDW93
BDW93A
BDW93B
BDW93C
VCEO
45
60
80
100
V
Emitter-base voltage VEBO 5V
Continuous collector current IC12 A
Continuous base current IB0.3 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 80 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2W
Operating junction temperature range Tj-65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Operating free-air temperature range TA-65 to +150 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
This series is obsolete and
not recommended for new designs.
OBSOLETE
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
2
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage IC = 100 mA IB = 0 (see Note 3)
BDW93
BDW93A
BDW93B
BDW93C
45
60
80
100
V
ICEO
Collector-emitter
cut-off current
VCB = 40 V
VCB = 60 V
VCB = 80 V
VCB = 80 V
IB=0
IB=0
IB=0
IB=0
BDW93
BDW93A
BDW93B
BDW93C
1
1
1
1
mA
ICBO
Collector cut-off
current
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW93
BDW93A
BDW93B
BDW93C
BDW93
BDW93A
BDW93B
BDW93C
0.1
0.1
0.1
0.1
5
5
5
5
mA
IEBO
Emitter cut-off
current VEB = 5 V IC=0 2 mA
hFE
Forward current
transfer ratio
VCE = 3 V
VCE = 3 V
VCE = 3 V
IC= 3 A
IC= 10 A
IC= 5 A
(see Notes 3 and 4)
1000
100
750 20000
VCE(sat)
Collector-emitter
saturation voltage
IB = 20 mA
IB = 100 mA
IC= 5 A
IC= 10 A (see Notes 3 and 4) 2
3V
VBE(sat)
Base-emitter
saturation voltage
IB = 20 mA
IB = 100 mA
IC= 5 A
IC= 10 A (see Notes 3 and 4) 2.5
4V
VEC
Parallel diode
forward voltage
IE = 5 A
IE = 10 A
IB = 0
IB = 0
2
4V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1.56 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
OBSOLETE
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
3
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 201·0 10
hFE - Typical DC Current Gain
50000
100
1000
10000
TCS130AE
TC = -40°C
TC = 25°C
TC = 100°C
VCE = 3 V
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 201·0 10
VCE(sat) - Collector-Emitter Saturation Voltage - V
0
0·5
1·0
1·5
2·0
2·5
3·0 TCS130AG
TC = -40°C
TC = 25°C
TC = 100°C
tp = 300 µs, duty cycle < 2%
IB = IC / 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 201·0 10
VBE(sat) - Base-Emitter Saturation Voltage - V
0·5
1·0
1·5
2·0
2·5
3·0 TCS130AI
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
OBSOLETE
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
4
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
THERMAL INFORMATION
Figure 4.
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
0 25 50 75 100 125 150
Ptot - Maximum Power Dissipation - W
0
20
40
60
80
100 TIS130AA
OBSOLETE
