FS150R17PE4 EconoPACKTM4/IGBT44 PressFIT/NTC EconoPACKTM4modulewithTrench/FieldstopIGBT4andEmitterControlled4diodeandPressFIT/NTC VCES = 1700V IC nom = 150A / ICRM = 300A * UPS * * * PotentialApplications * UPSsystems * Highpowerconverters * Motordrives * Windturbines * VCEsat * Tvjop * VCEsat ElectricalFeatures * LowVCEsat * ExtendedoperatingtemperatureTvjop * VCEsatwithpositivetemperaturecoefficient * * * MechanicalFeatures * Standardhousing * Isolatedbaseplate * Highpowerdensity ModuleLabelCode BarcodeCode128 DMX-Code Datasheet www.infineon.com ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V3.0 2018-04-13 FS150R17PE4 IGBT-/IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES 1700 V DC ContinuousDCcollectorcurrent TC = 100C, Tvj max = 175C IC nom 150 A Repetitivepeakcollectorcurrent tP = 1 ms ICRM 300 A VGES +/-20 V Gate-emitterpeakvoltage /CharacteristicValues Collector-emittersaturationvoltage min. IC = 150 A, VGE = 15 V IC = 150 A, VGE = 15 V IC = 150 A, VGE = 15 V Tvj = 25C Tvj = 125C Tvj = 150C VCE sat typ. max. 1,95 2,35 2,45 2,30 V V V 5,80 6,40 V Gatethresholdvoltage IC = 6,00 mA, VCE = VGE, Tvj = 25C Gatecharge VGE = -15 / 15 V QG 1,70 C Internalgateresistor Tvj = 25C RGint 5,0 Inputcapacitance f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 13,5 nF Reversetransfercapacitance f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,44 nF Collector-emittercut-offcurrent VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 100 nA VGEth Turn-ondelaytime,inductiveload IC = 150 A, VCE = 900 V VGE = -15 / 15 V RGon = 0,62 Tvj = 25C Tvj = 125C Tvj = 150C Risetime,inductiveload IC = 150 A, VCE = 900 V VGE = -15 / 15 V RGon = 0,62 Tvj = 25C Tvj = 125C Tvj = 150C Turn-offdelaytime,inductiveload IC = 150 A, VCE = 900 V VGE = -15 / 15 V RGoff = 0,62 Tvj = 25C Tvj = 125C Tvj = 150C Falltime,inductiveload IC = 150 A, VCE = 900 V VGE = -15 / 15 V RGoff = 0,62 Tvj = 25C Tvj = 125C Tvj = 150C Turn-onenergylossperpulse IC = 150 A, VCE = 900 V, L = 50 nH di/dt = 4900 A/s (Tvj = 150C) VGE = -15 / 15 V, RGon = 0,62 Tvj = 25C Tvj = 125C Tvj = 150C Turn-offenergylossperpulse IC = 150 A, VCE = 900 V, L = 50 nH du/dt = 3600 V/s (Tvj = 150C) VGE = -15 / 15 V, RGoff = 0,62 SCdata VGE 15 V, VCC = 1000 V VCEmax = VCES -LsCE *di/dt Thermalresistance,junctiontocase IGBT/perIGBT RthJC Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH Temperatureunderswitchingconditions Datasheet 0,20 0,22 0,23 s s s 0,03 0,04 0,05 s s s 0,51 0,61 0,64 s s s 0,29 0,52 0,60 s s s Eon 18,0 29,0 32,0 mJ mJ mJ Tvj = 25C Tvj = 125C Tvj = 150C Eoff 26,5 43,5 49,0 mJ mJ mJ tP 10 s, Tvj = 150C ISC 700 A td on tr td off tf Tvj op 2 5,20 0,180 K/W 0,0830 -40 K/W 150 C V3.0 2018-04-13 FS150R17PE4 Diode/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C DC ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms It-value VR = 0 V, tP = 10 ms, Tvj = 125C VR = 0 V, tP = 10 ms, Tvj = 150C VRRM 1700 V IF 150 A IFRM 300 A It 3800 3700 /CharacteristicValues min. As As typ. max. 2,20 VF 1,80 1,90 1,95 IF = 150 A, - diF/dt = 4900 A/s (Tvj=150C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Tvj = 150C IRM 320 340 350 A A A Recoveredcharge IF = 150 A, - diF/dt = 4900 A/s (Tvj=150C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Tvj = 150C Qr 26,0 53,0 61,0 C C C Reverserecoveryenergy IF = 150 A, - diF/dt = 4900 A/s (Tvj=150C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Tvj = 150C Erec 22,0 35,0 39,0 mJ mJ mJ Thermalresistance,junctiontocase /Diode/perdiode RthJC Thermalresistance,casetoheatsink /Diode/perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH Forwardvoltage IF = 150 A, VGE = 0 V IF = 150 A, VGE = 0 V IF = 150 A, VGE = 0 V Tvj = 25C Tvj = 125C Tvj = 150C Peakreverserecoverycurrent Temperatureunderswitchingconditions Tvj op V V V 0,340 K/W 0,156 -40 K/W 150 C NTC-/NTC-Thermistor /CharacteristicValues min. typ. max. Ratedresistance TNTC = 25C R100 DeviationofR100 TNTC = 100C, R100 = 493 Powerdissipation TNTC = 25C B- B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B- B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B- B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K R25 R/R 5,00 -5 P25 k 5 % 20,0 mW Specificationaccordingtothevalidapplicationnote. Datasheet 3 V3.0 2018-04-13 FS150R17PE4 /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 3,4 kV Cu Materialofmodulebaseplate Internalisolation (1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 Creepagedistance -/terminaltoheatsink -/terminaltoterminal 25,0 12,5 mm Clearance -/terminaltoheatsink -/terminaltoterminal 11,0 7,0 mm Comperativetrackingindex CTI Strayinductancemodule Moduleleadresistance,terminals-chip TC=25C,//perswitch Storagetemperature nH RCC'+EE' 1,40 m Tstg -40 125 C 6,00 Nm 6,0 Nm M 3,00 Terminalconnectiontorque M6 ScrewM6-Mountingaccordingtovalidapplicationnote M 3,0 G 4 max. 20 M5 ScrewM5-Mountingaccordingtovalidapplicationnote Datasheet typ. LsCE Mountingtorqueformodulmounting Weight > 200 min. 400 g V3.0 2018-04-13 FS150R17PE4 IGBT-(Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT-(Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150C 300 300 Tvj = 25C Tvj = 125C Tvj = 150C 250 250 225 225 200 200 175 175 150 150 125 125 100 100 75 75 50 50 25 25 0 0,0 0,5 1,0 VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V VGE = 8V 275 IC [A] IC [A] 275 1,5 2,0 VCE [V] 2,5 3,0 3,5 0 4,0 IGBT-(Typical) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 IGBT-(Typical) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=0.62,RGoff=0.62,VCE=900V 300 90 Tvj = 25C Tvj = 125C Tvj = 150C 275 Eon, Tvj = 125C Eoff, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 150C 80 250 70 225 200 60 50 E [mJ] IC [A] 175 150 40 125 100 30 75 20 50 10 25 0 5 Datasheet 6 7 8 9 VGE [V] 10 11 12 0 13 5 0 50 100 150 IC [A] 200 250 300 V3.0 2018-04-13 FS150R17PE4 IGBT-(Typical) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=150A,VCE=900V IGBT- transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 80 1 Eon, Tvj = 125C Eoff, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 150C 70 ZthJC : IGBT 60 0,1 ZthJC [K/W] E [mJ] 50 40 30 0,01 20 i: 1 2 3 4 ri[K/W]: 0,0108 0,0594 0,0576 0,0522 i[s]: 0,01 0,02 0,05 0,1 10 0 0 1 2 3 RG [] 4 5 6 IGBT-RBSOA) reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=0.62,Tvj=150C 0,001 0,001 0,01 0,1 1 t [s] Diodetypical) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 350 300 IC, Modul IC, Chip Tvj = 25C Tvj = 125C Tvj = 150C 275 300 250 225 250 200 175 IF [A] IC [A] 200 150 150 125 100 100 75 50 50 25 0 0 Datasheet 200 400 600 0 800 1000 1200 1400 1600 1800 VCE [V] 6 0,0 0,5 1,0 1,5 VF [V] 2,0 2,5 3,0 V3.0 2018-04-13 FS150R17PE4 Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=0.62,VCE=900V Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=150A,VCE=900V 60 50 Erec, Tvj = 125C Erec, Tvj = 150C 55 Erec, Tvj = 125C Erec, Tvj = 150C 45 50 40 45 35 40 30 E [mJ] E [mJ] 35 30 25 25 20 20 15 15 10 10 5 5 0 0 50 100 150 IF [A] 200 250 0 300 Diode transientthermalimpedanceDiode,Inverter ZthJC=f(t) 0 1 2 3 RG [] 4 5 6 NTC- NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 1 100000 ZthJC : Diode Rtyp R[] ZthJC [K/W] 10000 0,1 1000 i: 1 2 3 4 ri[K/W]: 0,0204 0,1122 0,1088 0,0986 i[s]: 0,01 0,02 0,05 0,1 0,01 0,001 0,01 0,1 1 100 t [s] Datasheet 7 0 20 40 60 80 100 TNTC [C] 120 140 160 V3.0 2018-04-13 FS150R17PE4 /Circuitdiagram J /Packageoutlines Datasheet 8 V3.0 2018-04-13 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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