BAT54XV2 — Schottky Barrier Diodes
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAT54XV2 Rev. A1 1
January 2010
BAT54XV2
Schottky Barrier Diodes
Features
Low Forward Voltage Drop
Flat Lead, Surface Mount Device at 0.60mm Height
Extremely Small Outline Plastic Package SOD523F
Moisture Level Sensitivity 1
Pb-free Version and RoHS Compliant
Matte Tin (Sn) Lead Finish
Green Mold Compound
Absolute Maximum Ratings * TA=25°C unless otherwise noted
* These ratings are limiting value s ab ove which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics TA=25°C unless otherwise noted
* Device mounted on FR-4 PCB minimum land pad.
Electrical Characteristics TA=25°C unless otherwise noted
Symbol Parameter Value Units
VRRM Maximum Repetitive Reverse Voltage 30 V
VRMaximum DC Blocking Voltage 30 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Peak Forward Surge Current 4 A
TJOperating Junction Temperature +125 °C
TSTG Storage Temperature Range -65 to +125 °C
Symbol Parameter Value Units
PDPower Dissipation 200 mW
RθJA Thermal Resistance, Junction to Ambient 500 °C/W
Symbol Parameter Test Condition Min. Typ. Max. Units
BVRBreakdown Voltage IR=10μA30 V
IRReverse Leakage Current VR=25V 2μA
VFForward Voltage IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
0.24
0.32
0.40
0.50
0.80
V
TRR Reverse Recovery Time IF=IR=10mA
RL=100Ω
IRR=1mA
5nS
C Capacitance VR=1V, f=1M Hz 10 pF
SOD-523F
Band Indicates Cathode
Cathode
ELECTRICAL SYMBOL
Anode
BAT54XV2 Marking : 5B
BAT54XV2 — Schottky Barrier Diodes
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAT54XV2 Rev. A1 2
Typical Performance Characteristics
0 5 10 15 20 25 30 35 40
10-1
100
101
102
103
104
105
106
-25 oC
125 oC
25 oC
Reverse Current, IR [nA]
Reverse Voltage, VR [V]
75 oC
Reverse Current vs Reverse Voltage
0.1
1
10
100
1000
0 100 200 300 400 500 600 700 800
-25 oC
125 oC
75 oC25 oC
Forward Voltage, VF [mV]
Forward Current, IF [mA]
Forward Voltage vs Forward Current
BAT54XV2 — Schottky Barrier Diodes
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAT54XV2 Rev. A1 3
Typical Performance Characteristics (Continued)
0 5 10 15 20 25 30 35 40
0
5
10
15
20
TA=25oC
f=1MHz
Capacitance, CT [pF]
Reverse Voltage, VR [V]
Total Capacitance
0 255075100125150
0
50
100
150
200
250
Power Dissipation, PD [mW]
Temperature, TA[oC]
Power Derating Curve
BAT54XV2 — Schottky Barrier Diodes
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAT54XV2 Rev. A1 4
Physical Dimension
SOD-523F
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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