September 2006
KSP2907A
PNP General Purpose Amplifier
Features
• Collector-Emitter Voltage: VCEO= 60V
• Collector Power Dissipation: PC (max)=625mW
• Suffix “-C” means a Center Collector (1.Emitter 2.Collector 3.Base)
• Non suffix “-C” means a Side Collector (1.Emitter 2.Base 3.Collector)
• Available as PN2907A
Absolute Maximum Ratings * Ta = 25°C unless othe rwise noted
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Ta=25°C unless otherwise noted
Note1. Infinite heat sink.
Note2. Minimum Land pad size.
Electrical Characteristics * Ta = 25°C unless otherwise noted
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
ICCollector current -600 mA
TJJunction Temperature +150 °C
Tstg Storage Temperature -55 ~ +150 °C
Symbol Parameter Max Units
PCCollector Power Dissipation, by RθJA 625 mW
RθJC Thermal Resistance, Junction to Case(note1) 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient(note2) 200 °C/W
Symbol Parameter Test Condition Min. Typ. Max. Units
V(BR)CBO Collector-Base Breakdown Voltage IC = -10µA, IE = 0 -60 V
V(BR)CEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = -10µA, IC = 0 -5.0 V
ICBO Collector Cutoff Current VCB = -50V, IE = 0 -10 nA
hFE DC Current Gain VCE = -10V, IC = -0.1mA,
VCE = -10V, IC = -1mA,
VCE = -10V, IC = -10mA,
VCE = -10V, IC = -150mA,
VCE = -10V, IC = -500mA,
75
100
100
100
50 300
VCE(sat) Collector-Emitter Saturati on Voltage IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA -0.4
-1.6 V
V
VBE(sat) Base-Emitter Saturation Voltage IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA -1.3
-2.6 V
V
Cobo Output Capacitance VCB = -10V, IE = 0, f = 1.0MHz 8pF
fTCurrent Gain Bandwidth Product IC = -50mA, VCE = -20V,
f = 100MHz 200 MHz
tON Turn On Time VCC= -30V, IC = -150mA, IB1= -15mA 45 ns
tOFF Turn Off Time VCC= -6V, IC = -150mA,IB1= IB1 = -15mA 100 ns
KSP2907A : 1. Emitter 2. Base 3. Collector
KSP2907AC : 1. Emitter 2. Collector 3. Base
TO-92
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