SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS T0-18 PACKAGE fre h @ 10V. 1M Pr FE ' z Type Vero @ 25C Ic! @ 2V, 2mA @ 2V, 500mA Max. NPN PNP ) (mW) (mA) Min. | Max. Min. fr Typical Package Specification (MHz, (pf) ) Outline No. Sheet No. 2N5810 2N5811 : 500 60 200 9.5 2N5812 2N5813 500 150 500 9.5 2N5814 2N5815 500 60 200 9.5 2N5816 2N5817 500 100 200 9.5 2N5818 2N5819 500 150 300 9.5 2N5820 2N5821 500 60 120 9.5 2N5822 2N5823 100 9.5 1 Steady State Collector Current SILICON SIGNAL ULTRA LOW NOISE COMPLEMENTARY PNP-NPN PAIRS hee N.F.2 Ceb @ 2V,100nA | @ 2V,10mA Typ. Max. @ 10V, 1MHz Package Specification Min. Min. (db) (db) (pf) Outline No. Sheet No. Pr Type Vceo @ 25C Ic! @ 2V, 104A NPN PNP (Vv) (mW) (mA) Min. 2N5998 2N5999 400 80 2N6008 2N6009 400 120 40.77 Steady State Collector Current 2N.F.Wide Band @ Vce = 5V, Ic =100uA, f = 10HZ to 1OKHZ, BW = 15.7 KHZ, Ro = 5K Q SILICON SIGNAL INDUSTRIAL COMPLEMENTARY PNP-NPN PAIRS T0-18 PACKAGE Min. Fee fr @ Pr (V) 10mA ton? tore? NF. Type Vceo T=25C Ic! @1V 1V | @ 2V | @ 2V | @ 5V Min. Max. Max. Max. Package Specification NPN PNP (Vv) @ (mW) (mA) 10mA | 1 300mA| 500mA| 800mMA @ 10) @ 100] @ 300 MHz nsec. nsec. dB Quiline No. Sheet No. 2N6000 _ : 400 50 100 100 40 150 320 _ 2N6001 400 90 100 75 35 225 230 2N6002 _ 400 130 250 245 80 165 410 2N6003 = 400 210 250 165 50 250 300 2N6004 400 50 40 150 320 _ 2N6005 400 90 100 75 35 225 2N6006 _ 400 130 250 245 80 165 _ 2N6007 400 210 250 165 50 250 2N6010 _ - 00 45 100 105 85 60 45 105 _ 2N6011 500 70 100 85 65 50 45 75 2N6012 500 90 250 250 | 160 70 50 150 2N6013 . 500 180 250 135 85 70 120 2N6014 _ 500 45 100 105 65 25 15 105 _ 2N6015 500 70 85 60 40 35 75 2N6016 _ 500 90 240 60 20 15 150 _ 2N6017 500 180 200 | 125 75 55 120 1 IcCollector Current Steady State 2 Switching Times @ Ic/la = 150/15mA 3N.F. measured @ Ic = 100A, VCE = 5V, Rs = 5K ohms, BW = 15.7 KHZ, f 10 HZ to 10 KHZ 4 Saturation voltage @ Ic/Is = 10 12NPN SILICON SIGNAL HIGH CURRENT GENERAL PURPOSE AMPLIFIERS AND SWITCHES TO-18 PACKAGE Vee tsaty . ag Vico @ 500mA Cur Specifi- hre @ 10mA SOmA Pr @ 10V f PNP Package cation @ 2, Min. Max Ta 25C Typical Typical COMPLE- Outtine Steet Type 2mA {) (Vv) (mW) (pF) (MHz) MENT Comments No. No. = = : 2N5810 Boz00 95 40.88 2N5812 50-500 * 2N5814_ BO+8 20 Excellent beta holdup of wide range of, | oueniag collector currents. Heatsinked versions , 2NS5816 : 40 5001 and complementary PNPs available. 175 0.89 2N5B18 . Excellent as audio drivers and outputs, 2N582 | 2NSe2 60 40,90 2N5822 2N6010 General purpose device designed pri- 40.97 40 marily for high tevel linear amplifiers, . 2N6012 a a 012 medium speed switching and control 175 _. 2N6014 3002. 500" applications. Excellent beta linearity up 601 100: nee ee to 800mA. Heatsink versions and 40.100 2N6016 250-500 = 60 180 ONBOLT ~ complements available. . 'Pr at To=259C, ico0mW 2 All units available with heatsink which raises Pr to 700mW, Ta= 25C; to specify a heatsink, Example: 2N5810 with heatsink is an HS5810. See page 20. 3hre measured at Vce=1V, Ic=10mA 4Vceisat) measured at Ic==300mA, le=30mA Vce=2V, Ic=500mA Vce=2V, Ic 500 mA 5.45 min hee 660 min hre Type 2N6001 2N6003 2N6005 2N6007 GET3638 GET3638A hre @1V tOmA Vceo @ 10mA Min, () 25 40 25V Three @ Vee=10V, Ic=~-10mA 2 Vee(sat) @ lc=50mA, lea=2.5mA substitute HS for 2N' in part no. PNP SILICON SIGNAL GENERAL PURPOSE SMALL SIGNAL AMPLIFIERS AND SWITCHES TO-18 PACKAGE Vce (sat) fr Typical (MHz) 340 400 340 Camments Package Outline No. PNP SILICON SI HIGH SPEED SWITCHES Specifi- cation Sheet No. 40.94 40.96 41.22 GNAL TO-18 PACKAGE VcEisat) Cob Vcro @ 150mA @ 10V Specifi- hre @ i0mA 15mk Pr 1MHz ft ton tots Package vation @ 10V Min. Max. TA= 25C Max. Typical MAX MAX Outline Sheet Type 150mA {) {) (mW) (pF) (MHz) (nsec) (nsec) Comments No. No. GET2904 : a T ~ oo 200 Epoxy replacement: 67. GET2906 - SNDSOR eplacemen a for 45.67 -40 400 110! 2N9907, GET2904 and L275 este GET2905_ 950 FoSpin cree are ead formed: to. a568 GET2907 af , 1 max switching times @ Ic=150mA, Je;=ls,.=15mA 15PNP SILICON SIGNAL HIGH CURRENT GENERAL PURPOSE AMPLIFIERS AND SWITCHES TO-18 PACKAGE Vee {sat} Ceb . @ 00maA @ 10V Specifi- 50mA Pr 1MHz fi NPN Package cation . ax. Ta: 25C Typical Typical Compie- Outline Sheet Type } () (mW) (pf) (MHz) ment Comments No. No. 2N5811 S oe 150 2N5810 2N5813 : 2 165 2N5812 2N5815 150 2N5814 2N5817 : 165 2N5816 2N5819 180 2N5818 2N5821 - as 150 2N5820 2N5823 a 165 2N5822 2N6011 : 150 2N6010 2N6013 : 180 2N6012 2NG015 : 4 150 2N6014 2N6017 : oF 180 2N6016 1 Pr at Te=25C 1000mW 2 All units available with heatsink which raises Pr to 700mW, Ta25C; to specify a heatsink, substitute HS for 2N in part no. Example: 2N5811 with heatsink is an HS5811. See page 20. 3 hee at Vee=1V, Ic=10mA 4Vee(set), lc=300mA, la=30mA 545 min hre @ Vce=2V, Ilcom=500mA 660 min hre @ Vee=2V, Ic=500mA NPN SILICON SIGNAL RF-IF AMPLIFIERS AND OSCILLATORS Vceo Vee tsat} Ceb MIN @ 10mA, @ 10V, Specifi- ft Package cation @ 10mA ima Pr 1MHz SV, Min. Max. Ta=25C Typical Typical Outline Sheet Type (Vv) (Vv) (mW) (pF) (MHz) Comments No. No. 2N3843 2N3843A 2N3844 2N3844A 2N3845 2N3845A 2N3854 2N3855 2N3856 2N3854A 2N3855A 2N3856A 2N3662 2N3663 B16G6 Thre @ Vce=10V, Ic=8mA 7 hee @ Vce=10V, Ic5mA 175 SS A 16SPECIAL SILICON PRODUCTS CHIP DRAWINGS SILICON SIGNAL DIODE CHIPS eo Equivalent GE Specification JEDEC Description 1 A | | Number Type . Sheet No. IN914 : Designed for high-speed switching and 35.88 AL ~ 4 INS14A : general purpose applications. 1N914B o We : 35.90 \ ue 1N3064 : Very high speed 35.89 : digh conductance and high-speed switching 2 1N3600 in logic, core, hammer driver circuits 35.97 and general purpose applications. : High-speed switching: high conductance, "y 3 4 1N3605 : fast recovery time, low leakage and 35.91 low capacitance. i" = + 1N4150 Similar to 1N3600 (Chip) 35.97 : . ve 1N4152 Similar to 1N3605 (Chip) 35.91 3 s 1N4551 High current, fast switching diode 35.101 : N : designed primarily for computer usage i ! She desk 1N4454 oe . Similar to 1N3064 (Chip) 1N4532 OS ce ' - 1N4533 ce Similar to 1N3605 (Chip) od, 1N4606 : * Similar to 1N3600 (Chip) except high voltage. 4 i . . eS SILICON SIGNAL TRANSISTOR CHIPS A Equivalent JEDEC GE Description , Specification Number Type 2N708 2 NPN chip for high-speed switching. Also 35.98 suitable as small signal device. 2N918 NPN chip for high frequency 35.92 2N929 35.79 NPN chip for low-level amplifiers. 2N930 35.76 2N2219 2N2220 : NPN chip for high-speed switching, 2N2221 coe amplifiers and core drivers. 2N2222 2N2222A 2N2369 NPN chip ideal for high speed switching 2N2484 NPN chip for low-level, high gain preamplifiers in hybrid and micro-miniature circuits. 2N2604 : PNP chip featuring high BVceo and low capacitance 2N2714 NPN chip for general purpose. 2N2905 : & PNP chip for amplifiers, drivers and general 2N2906 : purpose switching. (Electrically similar to serie . 2N2907 res only.) 2N3414 2N3415 NPN chip suited for high-level linear amplifiers QNBA16 or medium-speed switching circuits. 2N3417 2N3855A NPN chip for RF, IF and converters in AM 2N3856A and FM radio and TV video amplifiers. 2N3859 2N3860 2N3975 2N3976 2N5172 NPN chip for general purpose. NPN chip for AM radio, (F and converters. NPN chip for medium-speed switching and large signa! RF amplifiers. 2N5232 NPN chip for lcw noise preamp and smali signal amplifier. 2N5306 NPN darlington chip for preamp input stages. NPN chip for genera! purpose 2N5814 amplifier applications at audio and intermediate frequencies 2N5815 PNP chipcomplement to M86PX503 NPN chip for general tow signal levels. NPN darlington chip for preamp input stages. ' Similar to chip drawing #2 except chip is 20 mils square with 12 mil diameter cathode dot 12 30