PZT2907A - ON SEMICONDUCTOR

PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor

Publication Order Number:

PZT2907A/D

October-2017, Rev. 2

PN2907A / MMBT2907A / PZT2907A

60 V PNP General-Purpose Transistor

Features

• High DC Current Gain (hFE) Range: 100 ~ 300

• High-Current Gain Bandwidth Product (fT):

200 MHz (Minimum)

• Maximum Turn-On Time (ton): 45 ns

• Maximum Turn-Off Time (toff): 100 ns

• Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A)

Applications

• General-Purpose Amplifier

•Switch

Ordering Information

Part Number Top Mark Package Packing Method

PN2907ABU 2907A TO-92 3L Bulk

PN2907ATF 2907A TO-92 3L Tape and Reel

PN2907ATFR 2907A TO-92 3L Tape and Reel

PN2907ATA 2907A TO-92 3L Ammo

PN2907ATAR 2907A TO-92 3L Ammo

MMBT2907A 2F SOT-23 3L Tape and Reel

MMBT2907A-D87Z 2F SOT-23 3L Tape and Reel

PZT2907A 2907A SOT-223 4L Tape and Reel

PN2907A MMBT2907A PZT2907A

EBC TO-92 SOT-23 SOT-223

Mark:2F

Description

The PN2907A, MMBT2907A, and PZT2907A are 60 V

PNP bipolar transistors designed for use as a general-

purpose amplifier or switch in applications that require

up to 500 mA. Offered in an ultra-small surface-mount

package (SOT-223), the PZT2907A is ideal for space-

constrained systems. The NPN complementary types

are the PN2222A, MMBT2222A, and PZT2222A;

respectively.

PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor

Absolute Maximum Ratings(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-

duty cycle operations.

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Notes:

3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.

4. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage -60 V

VCBO Collector-Base Voltage -60 V

VEBO Emitter-Base Voltage -5.0 V

ICCollector Current - Continuous -800 mA

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Symbol Parameter Max. Unit

PN2907A(4) MMBT2907A(3) PZT2907A(4)

Total Device Dissipation 625 350 1000 mW

Derate Above 25°C5.02.88.0mW/°C

RθJC Thermal Resistance, Junction to Case 83.3 °C/W

RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W

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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Notes:

5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.

Symbol Parameter Conditions Min. Max. Unit

Off Characteristics

V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = -10 mA, IB = 0 -60 V

V(BR)CBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -60 V

V(BR)EBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V

IBL Base Cut-Off Current VCE = -30 V, VEB = -0.5 V -50 nA

ICEX Collector Cut-Off Current VCE = -30 V, VEB = -0.5 V -50 nA

ICBO Collector Cut-Off Current VCB = -50 V, IE = 0 -0.02 μA

VCB = -50 V, IE = 0, TA = 150°C -20

On Characteristics

hFE DC Current Gain

IC = -0.1 mA, VCE = -10 V 75

IC = -1.0 mA, VCE = -10 V 100

IC = -10 mA, VCE = -10 V 100

IC = -150 mA, VCE = -10 V(5) 100 300

IC = -500 mA, VCE = -10 V(5) 50

VCE(sat) Collector-Emitter Saturation Voltage(5) IC = -150 mA, IB = -15 mA -0.4 V

IC = -500 mA, IB = -50 mA -1.6

VBE(sat) Base-Emitter Saturation Voltage IC = -150 mA, IB = -15 mA(5) -1.3 V

IC = -500 mA, IB = -50 mA -2.6

Small Signal Characteristics

fTCurrent Gain - Bandwidth Product IC = -50 mA, VCE = -20 V,

f = 100 MHz 200 MHz

Cob Output Capacitance VCB = -10 V, IE = 0,

f = 100 kHz 8.0 pF

Cib Input Capacitance VEB = -2.0 V, IC = 0, f = 100 kHz 30 pF

Switching Characteristics

ton Turn-On Time

VCC = -30 V, IC = -150 mA,

IB1 = -15 mA

45 ns

tdDelay Time 10 ns

trRise Time 40 ns

toff Turn-Off Time

VCC = -6.0 V, IC = -150 mA,

IB1 = IB2 = -15mA

100 ns

tsStorage Time 80 ns

tfFall Time 30 ns

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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor

Typical Performance Characteristics

Figure 1. Typical Pulsed Current Gain vs.

Collector Current Figure 2. Colle ctor-Emitter Saturation Voltage vs.

Collector Current

Figure 3. Base-Emitter Saturation Voltage vs.

Collector Current Figure 4. Base-Emitter On Voltage vs.

Collector Current

Figure 5. Collect or Cut-Off Current vs.

Ambient Temperature Figure 6. Input and Output Capacitance vs.

Revers e B ia s Voltage

0.1 0.3 1 3 10 30 100 300

100

200

300

400

500

I - COLLECTOR CURRENT (mA)

h - TYPICAL PULSED CURRENT GAIN

125 °C

25 °C

- 40 °C

V = 5V

110100500

0. 1

0. 2

0. 3

0. 4

0. 5

I - COLLECTOR CURRE NT (mA)

V - COLLECTOR EMITTER VOLTAGE (V)

CESAT

β= 10

25 °C

- 40

125

110100500

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - BASE EMITTER VOLTAGE (V)

BESAT

25 °C

- 40

125

β= 10

0.1 1 10 25

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - BAS E EMITTER ON VOLTAGE (V)

BE( ON)

V = 5V

25 °C

- 40

125

25 50 75 100 125

0.01

0.1

10 0

T - A MBI E NT T EMP ER AT UR E ( C)

I - COLLECTOR CURRENT (nA)

CBO

V = 35V

0.1 1 10 50

REVERSE BIAS VOLTAGE (V)

CAPACITANCE (pF)

Cob

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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor

Typical Performance Characteristics (Continued)

Figure 7. Switching Times vs. Collector Current Figure 8. Turn-On and Turn-Off Times vs.

Collector Current

Figure 9. Rise Time vs.

Collector and Turn-On Base Currents Figure 10. Power Dissipation vs.

Ambient Temperature

10 100 1000

100

150

200

250

I - COLLECTOR CURRENT (mA)

TIME (nS)

I = I =

V = 15 V

10 100 1000

100

200

300

400

500

I - COLLECTOR CURRENT (mA)

TIME (nS)

I = I =

ton

off

V = 15 V

10 100 500

I - COLLECTOR CURRENT (mA)

I - TURN 0N BASE CURRENT (mA)

30 ns

t = 15 V

60 ns

0 25 50 75 100 125 150

0.25

0.5

0.75

TEMPERATURE ( C)

P - POWER DISSIPATION (W)

SOT-223

TO-92

SOT-23

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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor

Typical Performance Characteristics (f = 1.0 kHz)

Figure 11. Common Emitter Characteristics Figure 12. Common Emitter Characteristics

Figure 13. Common Emitter Characteristics

12 51020 50

0.1

0.2

0.5

I - COLLECTOR CURRENT (mA)

CHAR. RELATIVE TO VALUES AT I = -10mA

V = -10 V

T = 25 C

A o

hoe

hre

hfe

hie

_ _ _ _ _ _

-20-16-12-8-4

0.8

0.9

1.1

1.2

1.3

V - COLLECTOR VOLTAGE (V)

CHAR. RELATIVE TO VALUES AT V = -10V

I = -10mA

T = 25 C

A o

hoe

h and h

hfe

hie

oe hfe

hie

hre

-40-200 20406080100

0.5

0.6

0.7

0.8

0.9

1.1

1.2

1.3

1.4

1.5

T - AMBIENT TEMPERATURE ( C)

CHAR. RELATIVE TO VALUES AT T = 25 C

V = -10 V

hoe

hre

hfe

hie

I = -10mA

C hfe

h ie

hre

hoe

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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor

Physical Dimensions

Figure 14. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)

(ACTIVE)

Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in

any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to

verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and

conditions, specifically the warranty therein, which covers ON Semiconductor products.

TO-92 (Bulk)

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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor

Physical Dimensions (Continued)

Figure 15. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION) (ACTIVE)

Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in

any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to

verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and

conditions, specifically the warranty therein, which covers ON Semiconductor products.

TO-92 (Tape and Reel, Ammo)

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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor

Physical Dimensions (Continued)

Figure 16. 3- LEAD, SOT2 3 , JEDEC TO-236, LOW PROFILE (ACTIVE)

Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in

any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to

verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and

conditions, specifically the warranty therein, which covers ON Semiconductor products.

LAND PATTERN

RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED

A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE INCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR EXTRUSIONS.

D) DIMENSIONING AND TOLERANCING PER

ASME Y14.5M - 1994.

E) DRAWING FILE NAME: MA03DREV10

SEE DETAIL A

SEATING

PLANE

SCALE: 2X

GAGE PLANE

(0.55)

(0.93)

1.20 MAX

0.10

0.00

0.10 C

2.40±0.30

2.92±0.20

1.30+0.20

-0.15

0.60

0.37

0.20 A B

1.90

0.95

(0.29)

0.95

1.40

2.20

1.00

1.90

0.25

0.23

0.08

0.20 MIN

SOT-23

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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor

Physical Dimensions (Continued)

Figure 17. MOLDED PACKAGING, SOT-223, 4-LEAD (ACTIVE)

Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in

any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to

verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and

conditions, specifically the warranty therein, which covers ON Semiconductor products.

SOT-223

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