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Document Number: 94247 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Jan-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Schottky Rectifier, 2 x 3.5 A
VS-6CWQ03FNPbF
Vishay Semiconductors
FEATURES
• Popular D-PAK outline
• Center tap configuration
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-6CWQ03FNPbF surface mount, center tap,
Schottky rectifier series has been designed for applications
requiring low forward drop and small foot prints on PC
board. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
IF(AV) 2 x 3.5 A
VR30 V
VF at IFSee Electrical table
IRM 50 mA at 125 °C
TJ max. 150 °C
Diode variation Common cathode
EAS 8 mJ
Base
common
cathode
Common
cathode
2
4
13
Anode Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 7 A
VRRM 30 V
IFSM tp = 5 μs sine 535 A
VF3 Apk, TJ = 125 °C (per leg) 0.35 V
TJRange - 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-6CWQ03FNPbF UNITS
Maximum DC reverse voltage VR30 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
IF(AV) 50 % duty cycle at TC = 134 °C, rectangular waveform
3.5
A
per device 7
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
535
10 ms sine or 6 ms rect. pulse 90
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 2 A, L = 4 mH 8 mJ
Repetitive avalanche current per leg IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1A