25 D MM A235b05 OOON332 4 MESIEG NPN Silicon Transistors - STEMENS AKTIENGESELLSCHAF Bate wre For AF driver and output stages of medium performance BD 136, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126 plastic package (12 A 3 DIN 41869, sheet 4). The collector is electrically connected to the metallic mounting area. Together with BD 136, BD 138, and BD 140 as complementary pairs the transistors BD 135, BD 137, and BD 139 are designed for use in driver stages of high performance AF amplifiers. Type Ordering code Type | Ordering code BD 135 Q62702-D106 Mica washer 062902-B62 BD 135-6 Q62702-D106-V1 Spring washer Q62902-B63 BD 135-10 Q62702-D106-V2. A3DIN 137 BD 135-16 0Q62702-D106-V3 BD 135 paired Q62702-D106-P BD 137 Q62702-D108 BD 137-6 Q62702-D108-V1 BD 137-10 Q62702-D108-V2 BD 137 paired 062702-0108-P BD 139 062702-D110 BD 139-6 Q62702-D110-V1 i eis a BD 139-10 Q62702-D110-V2 . ~ BD 139 paired Q62702-D110-P aoe BD 135/BD 136 compl. pair. BD 137/BD 138 compl. pair. BD 139/BD 140 compl. pair. Maximum ratings Collector-emitter voltage (Ree S 1 kQ) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector peak current Collector current Base current Junction temperature Storage temperatur range Total power dissipation (TeasgS25C) Prot Thermal resistance Junction to ambient air Junction to case bottom 378 61755 Q62702-D139-S1 Q62702-D140-S1 Q62702-D141-S1 Approx. weight 0.5 g Dimensions in mm Transistor fixing with M 3 screw. Starting torque < 0.8 Nm; washer or spring washer should be used. . 1) Ifa 50 p mica washer (ungreased) is used, the thermal resistance increases by 8 and in case of a greased one by 4 K/W. BD 135 | BD137 | BD 139 Vcer - - 100 V Veao 45 60 - Vv Veeo 45 60 80 Vv Veso 5 5 5 Vv cM 2,0 2,0 2.0 A c 1,5 1,5 1,5 A In 0,2 0,2 0.2 A Tj 150 150 150 C Tetg -56 to +125 c 12,5 | 12,6 12.5 w Rina. | 9110 | $110 $110 | K/W Rinsc') | $10 $10 $10 KAW F-14 ee an an tre at OF at ote ee oe1756 25 D MM 8235605 0004333 b MESIEG] ~72 o> _H SIEMENS AKTIENGESELLSCHAF 14333 D Static characteristics (Tamp = 25 C) The transistors BD 135, BD 137, and BD 139 are grouped in accordance with the DC current gain hee, and marked by numerals of the German DIN standard. hee group 6 10 16 Type BD 135 BD 135 BD 135 BD 135 BD 137 BD 137 - BD 137 BD 139 BD 139 - BD 139 Ig hee hee fre Vee (mA) Tof Tg Io/Ig Ic/Ig (Vv) 5 >25 >26 >25 - 150 63 (40 to 100) 100 (63 to 160) 160 (100 to 250) | - 500 >25 >25 >25 1.2 Static characteristics (Tap = 25 C) BD 135 BD 137 BD 139 Collector-emitter saturation voltage (Ig = 500 mA; Jp = 50 mA) Voesat .<0.5 <0.5 <0.5 Vv Collector cutoff current (Veg = 30 V) Togo <100 <100 <100 nA Collector cutoff current (Veg = 30 V; Tamb = 125C) Iceo $10 $10 310 pA Emitter cutoff current (Veg = 5 V) Teao $10 $10 $10 pA Collector-emitter breakdown voltage (Iceg = 50 mA) Visriceo | >45 >60 >80 Vv Condition for matching pairs heet (Ie = 150 mA; Vee = 2 V) FE2 31.41 41.41 $1.41 - Dynamic characteristics (T,,p = 25C} Transition frequency (J = 50 mA; Vee = 10 V; f = 100 MHz) fr >50 >50 >50 MHz - * 379 G-01 tn mu25C D W@ 4235605 0004334 & MESIEG a T-33-07 . rou vets D - SIEMENS AKTIENGESELLSCHAF 14 Aot 12 10 4 A 10! ot Tota! perm. power dissipation versus temperature Prot = 1); Ren = parameter 8D136, 8D 137, BD139 J Insulation ungreased 50 0 50 100 Permissible operating range Ig =f (Veg): Tease = 60C: v= 180C 8D 135, 8D 137, BD 139 0? 0 5 10! 5 > Vee 380 11757 G-02 160 60 29 12,5 102 BD 135 BD 137 BD 139 Permissibfe putse toad K tase = f(t; v= parameter W 6D 136, BD 137, BD139 0 5 hue 10 5 tr 5 10? ow 0 6ohlhlUPUlUCU ts t Collector current [, =f (Vge) Vee = 2.V; Tomb = parameter (common emitter configuration) 8D 136, BD 137, 80139 ie 5 i { 1? 5 102 5 w 5 10 0 ee ttentemen ce em om eat Aa unocemnte oo} uit25C ) MM 8235605 0004335 T MMESIEG! -72 33-07 ~ 25C 04335 dD BD 135 SIEMENS AKTIENGESELLSCHAF ~ BD 137 BD 139 DC current gain heg =f (Ic) Veg = 2 V: Tam = parameter BD 135-10, 80 137-10, BD 139-10 to? 0 - 1758 ef Collector-emitter saturation voltage Veesat = fic) hee = 10; Tamp = parameter (common emitter configuration) BD 135, 80137, BD 139 w Average values = Scanering limit at Tamp=26R a2 Of O06 08 M 2v VCE sat G~03 Collector cutoff current versus temperature Tcag = # (Tomb) BD 135, BD 137, BD 139 mam Scattering bint 50 w 50C Fant Base-amitter saturation voltage Vagsat = f Uc) Fre =10; Tamp = parameter (common emitter configuration) B8D136, 8D 137, BD 139 values ann = Scattering init atTamb= Fa t 5 ft sabeneg mtane orn ee etnipi in Ammen dha guttie ear te2e5C D MM 4235605 00043 oe BD 135 BD 137 Output characteristics Ic = f (Vee) Ig = parameter mA BO 135, 8D 137, 8D139 10 100 ke $0 { a0 Vee Output characteristics J = f (Vce) fg = parameter | BD 136, BD 137, BD 139 a 0 0 30 40V Ve 382 ee / 1759 6-04 BD 139 Output characteristics / = f (Vce} Ig = parameter mA BD135, BD 137, BD139 16 i ~Ve Transition frequency fy = f (Jo) (Voce = 10 V} MHZ BD135, BD 137, BD139 108 07 70 107 10? 5 10mA 3b b MESIEG. 7~FSG-0T7 PRT 04336 DB SIEMENS AKTIENGESELLSCHAF 1 aor sme wee nt ae