SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR ISSUE 3 - SEPTEMBER 1995 COMPLEMENTARY TYPE PARTMARKING DETAILS BCV49 SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Vego 80 v Collector-Emitter Voltage Veceo 60 Vv Emitter-Base Voltage Vepo 10 Vv Peak Pulse Current lem 800 mA Continuous Collector Current le 500 mA Power Dissipation at T,_p=25C Prot 1 Ww Operating and Storage Temperature TT stg -65 to +150 c Range ELECTRICAL CHARACTERISTICS (at Tamp= 25C unless otherwise stated). PARAMETER SYMBOL |MIN. |TYP. |MAX. |UNIT |CONDITIONS. Collector-Base Viarycao =| 80 Vv Io=100UA Breakdown Voltage Collector-Emitter Visriceo [60 Vv Ic=10mA* Breakdown Voltage Emitter-Base Vienyepo | 10 v Ip=T0LA Breakdown Voltage Collector Cut-Off lcBo 100 nA Vep=60V Current 10 pA Vep=60V, Ta mp2 150C Emitter Cut-Off Current |lego 100 nA Vepa4V Collector-Emitter Veeisat) 1 Vv Ic=100mA, 1g=0.1mA* Saturation Voltage Base-Emitter V BE(sat) 1.5 Vv Ie=100MA, Ig=0.1mA* Saturation Voltage Static Forward Current (hee 2000 [c= 100HA, Veg=1VT Transfer Ratio 4000 Ic= TOMA, Ve=5V* 10000 Ic=100MA, Veg=5V* 2000 Ic=500mA, Vcp=5V* Transition Frequency {fr 170 MHz = |I-=50mA, Vcg=5V f = 20MHz Output Capacitance Cobo 3.5 pF Veg=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300us. Duty cycle <2% For typical graphs see FMMT38A datasheet Spice parameter data is available upon request for this device t Periodic Sampie Test Only. 3-26