1Rectifier Device Data
Surface Mount Power Package
...Employs the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low voltage,
high frequency rectification, or as free wheeling and polarity protection diodes,
in surface mount applications where compact size and weight are critical to
the system.
•Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25°C)
•Small Compact Surface Mountable Package with J–Bend Leads
•Highly Stable Oxide Passivated Junction
•Guardring for Stress Protection
Mechanical Characteristics
•Case: Epoxy, Molded
•Weight: 95 mg (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
•Lead and Mounting Surface Temperature for Soldering Purposes: 260°C
Max. for 10 Seconds
•Shipped in 12 mm Tape and Reel, 2500 units per reel
•Polarity: Notch in Plastic Body Indicates Cathode Lead
•Marking: 1BL3
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30 Volts
Average Rectified Forward Current TL = 120°C
TL = 110°CIF(AV) 1.0
2.0 Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 40 Amps
Operating Junction Temperature TJ– 65 to +125 °C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Lead
(TL = 25°C) RθJL 12 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 A, TJ = 25°C)
(iF = 2.0 A, TJ = 25°C)
VF0.395
0.445
Volts
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
IR1.0
10
mA
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2%.
Designer’s Data for “W orst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1998
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
30 VOLTS
CASE 403A–03
Motorola Preferred Device
Order this document
by MBRS130LT3/D
SEMICONDUCTOR TECHNICAL DATA
Rev 1
MBRS130LT3
2Rectifier Device Data
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
10
5.0
2.0
1.0
0.5
0.2
0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
TJ = 100
°
C
25
°
C
IR, REVERSE LEAKAGE CURRENT (mA)
100
10
1.0
0.1
0.01
0.001 0 3 6 9 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Leakage Current
TJ = 100
°
C
25
°
C
IF(AV), A VERAGE FORWARD CURRENT (AMPS)
8
7
6
5
4
3
2
1
050 60 70 80 90 100 110 120 130
TC, CASE TEMPERATURE (
°
C)
Figure 3. Current Derating (Case)
SQUARE
WAVE
DC
TJ = 100
°
C
PF(AV), AVERAGE POWER DISSIPA TION (WATTS)
8
7
6
5
4
3
2
1
001 2345 67 8
I
F(AV), A VERAGE FORWARD CURRENT (AMPS)
Figure 4. Typical Power Dissipation
20 10 5
π
DC
IPK
IAV =
SQUARE
WAVE
C, CAPACITANCE (pF)
400
350
300
250
200
150
100
50
00 4 8 121620242832
V
R
, REVERSE VOLT AGE (VOLTS)
Figure 5. Typical Capacitance
RATED VOLTAGE APPLIED
R
θ
JC = 12
°
C/W
TJ = 100
°
C
NOTE: TYPICAL CAPACITANCE
AT 0 V = 290 pF
MBRS130LT3
3Rectifier Device Data
PACKAGE DIMENSIONS
A
S
DB
J
P
K
C
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.160 0.180 4.06 4.57
B0.130 0.150 3.30 3.81
C0.075 0.095 1.90 2.41
D0.077 0.083 1.96 2.11
H0.0020 0.0060 0.051 0.152
J0.006 0.012 0.15 0.30
K0.030 0.050 0.76 1.27
P0.020 REF 0.51 REF
S0.205 0.220 5.21 5.59
CASE 403A–03
ISSUE B
MBRS130LT3
4Rectifier Device Data
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MBRS130LT3/D
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