Page 1 of 8Dynex Semiconductor Limited, Doddington Road, Lincoln, United Kingdom, LN6 3LF
Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550
www.dynexsemi.com
Registered in England and Wales: No 3824626 Registered Office: Doddington Road, Lincoln, United Kingdom, LN6 3LF
DIM600XSM45-F000
Single Switch IGBT Module
DS5874-1.1 August 2006 (LN24724)
FEATURES
• 10µs Short Circuit Withstand
• Soft Punch Through Silicon
• Lead Free construction
• Isolated MMC Base with AlN Substrates
• High Thermal Cycling Capability
• High isolation module
APPLICATIONS
• High Reliability Inverters
• Motor Controllers
• Traction Drives
• Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 600V to
6500V and currents up to 3600A.
The DIM600XSM45-F000 is a single switch 4500V,
soft punch through n-channel enhancement mode,
insulated gate bipolar transistor (IGBT) module. The
IGBT has a wide reverse bias safe operating area
(RBSOA) plus 10us short circuit withstand. This
device is optimised for traction drives and other
applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM600XSM45-F000
Note: When ordering, please use the complete part
number
KEY PARAMETERS
V CES 4500V
V CE(sat) * (typ) 2.9 V
I C (max) 600A
I C(PK) (max) 1200A
*(measured at the power busbars and not the auxiliary terminals)
Fig. 1 Single switch circuit diagram
Outline type code: X
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
DIM600XSM45-F000
2/7 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
Tcase = 25°C unless stated otherwise
Symbo
lParameter Test Conditions Max. Units
VCES Collector-emitter voltage VGE =0V 4500 V
VGES Gate-emitter voltage ±20 V
ICContinuous collector current Tcase =95 ° C 600 A
IC(PK) Peak collector current 1ms, Tcase=115 ° C 1200 A
Pmax Max.transistor power
dissipation Tcase =25 °C, T j =150 ° C 10.4 kW
I2t Diode I2t value (Diode arm) VR =0,tp =10ms,Tvj =125 °C TBD kA 2s
Visol Isolation voltage-per module Commoned terminals to base plate.
AC RMS,1 min,50Hz 7400 kV
QPD Partial discharge-per module IEC1287.V1 =4800V, V2 =3500V, 50Hz RMS 10 pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material: AlN
Baseplate material: AlSiC
Creepage distance: 56mm
Clearance: 26mm
CTI (Critical Tracking Index) > 600
Symbol Parameter Test Conditions Min Typ. Max Units
Rth(j-c) Thermal resistance -transistor (per
switch) Continuous dissipation -
junction to case - 12 ° C/kW
Rth(j-c) Thermal resistance -diode (per
switch) Continuous dissipation -
junction to case - 24 ° C/kW
Rth(c-h) Thermal resistance -case to heatsink
(per module) Mounting torque 5Nm
(with mounting grease) - 8 ° C/kW
TjJunction temperature Transistor - - 150 ° C
Diode - - 125 ° C
Tstg Storage temperature range - -40 - 125 ° C
Screw torque Mounting M6 - - 5 Nm
Electrical connections -
M4 - - 2 Nm
Electrical connections -
M8 - - 10 Nm
DIM600XSM45-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 3/7
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ELECTRICAL CHARACTERISTICS
T case = 25°C unless stated otherwise.
Symbo
lParameter Test Conditions Min Typ Max Units
ICES Collector cut-off current VGE =0V,VCE =VCES 1 mA
VGE =0V,VCE =VCES ,Tcase =125 °C 60 mA
IGES Gate leakage current VGE = ± 20V,VCE =0V 8 uA
VGE(TH) Gate threshold voltage IC =80mA,VGE =VCE 5.5 6.5 7.0 V
VCE(sat)†Collector-emitter saturation
voltage VGE =15V,IC =600A 2.9 V
VGE =15V,IC =600A,TVJ =125 °C 3.5 V
IFDiode forward current DC 600 A
IFM Diode maximum forward
current tp =1ms 1200 A
VFDiode forward voltage IF =600A 3.0 V
IF =600A,TVJ =125 °C 3.1 V
Cies Input capacitance VCE =25V,VGE =0V,f =1MHz 130 nF
Cres Reverse transfer capacitance VCE =25V,VGE =0V,f =1MHz 1.8 nF
LMModule inductance -- 15 nH
RINT Internal transistor resistance 135 µΩ
Tj ≤125 °C,VCC ≤3000V, I 12800 A
SCData Short circuit.I SC t p = 10 us, I 2
VCE(max)=VCES – L*.di/dt
IEC 60747-9 2500 A
Note:
†Measured at the power busbars and not the auxiliary terminals
*L is the circuit inductance + L M
DIM600XSM45-F000
4/7 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol Parameter Test Conditions Min Typ. Max Units
td(off) Turn-off delay time IC =600A 5.0 us
tfFall time VGE =±15V 250 ns
EOFF Turn-off energy loss VCE =2250V 1500 mJ
td(on) Turn-on delay time RG(ON) =4.7Ω
RG(OFF)=11Ω850 ns
trRise time Cge =110nF 220 ns
EON Turn-on energy loss L ~200nH 1800 mJ
QgGate charge 20 uC
Qrr Diode reverse recovery
charge IF =600A,VCE =2250V, 475 uC
Irr Diode reverse recovery
current dIF/dt =3000A/us 700 A
Erec Diode reverse recovery
energy 600 mJ
Tcase = 125°C unless stated otherwise
Symbol Parameter Test Conditions Min Typ. Max Units
td(off) Turn-off delay time IC =600A 5.2 us
tfFall time VGE =±15V 250 ns
EOFF Turn-off energy loss VCE =2250V 1700 mJ
td(on) Turn-on delay time RG(ON) =4.7Ω
RG(OFF)=11Ω800 ns
trRise time Cge =110nF 220 ns
EON Turn-on energy loss L ~200nH 2700 mJ
Qrr Diode reverse recovery
charge IF =600A,VCE =2250V, 850 uC
Irr Diode reverse recovery
current dIF/dt =3000A/us 820 A
Erec Diode reverse recovery
energy 1050 mJ
DIM600XSM45-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 5/7
www.dynexsemi.com
0
200
400
600
800
1000
1200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Collector-emitter voltage, Vce - (V)
Collector current, Ic - (A)
Vge=10V
Vge=12V
Vge=15V
Vge=20V
Common emitter
Tcase = 25° C
VCE is measured at power busbars
and not the auxiliary terminals
0
200
400
600
800
1000
1200
0.0 1.0 2.0 3.0 4.0 5.0
Collector-emitter voltage, Vce - (V)
Collector current, Ic - (A)
Vge=10V
Vge=12V
Vge=15V
Vge=20V
Common emitter
Tcase = 125° C
V
CE is measured at power busbars
and not the auxiliary terminals
Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics
0
1000
2000
3000
0 200 400 600
Collector Current - Ic (A)
Switching Energy - Esw (mJ)
Eon (mJ)
Eoff (mJ)
Erec (mJ)
Conditions:
VCC = 2250V
Tcase = 125° C
Rg = 4.7Ohms
Cge =110nF
Vge =+/- 15V
0
1000
2000
3000
4000
5000
6000
7000
8000
0 5 10 15 20 25 30
Gate Resistance - Rg (Ohms)
Switching Energy - Esw (mJ)
Eon (mJ)
Eoff (mJ)
Erec (mJ)
Conditions:
V
CC = 2250V
Ic = 600A
Tcase = 125° C
Cge =110nF
Vge = +/- 15V
Fig.5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance
DIM600XSM45-F000
6/7 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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0
200
400
600
800
1000
1200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Forward voltage, Vf - (V)
Forward Current If - ( A)
25ºC
125ºC
VF is measured at power busbars
and not the auxiliary terminals
0
200
400
600
800
1000
1200
1400
4000 4200 4400 4600 4800 5000
Collector emitter voltage, Vce (V)
Collector current, Ic (A)
Tcase = 125'C
Vge = +/-15V
Rg(off) =11ohms
Module Chip
Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area
1
10
100
0.001 0.01 0.1 1 10
Pulse time, tp - (s)
Transient thermal impedance, Zth(j-c) - ('C/kW)
Rth IGBT
Rth diode
0
100
200
300
400
500
600
700
800
900
1000
0 1000 2000 3000 4000 5000
Reverse voltage, VR -(V)
Reverse recoery current, Irr-(A)
Tj = 125º C
1
2
3
4
IG B T R i (°C /kW ) 0.46 2.10 3 .64 5.86
ti (m s )
0.17
8.08
51.9 2
280.5
D iode R i (°C /kW ) 0.90 4.22 7.28 11.71
ti (m s ) 0.17 8.08 51.9 2 280.5
Fig. 9 Diode reverse bias safe operating area Fig. 10 Transient thermal impedance
DIM600XSM45-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 7/7
www.dynexsemi.com
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm,
unless stated otherwise.
DO NOT SCALE.
Nominal weight: 1100g
Module outline type code: X
Fig. 11 Outline drawing
DIM600XSM45-F000
8/7 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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POWER ASSEMBLY CAPABILITY
basic semiconductor, and has developed a flexible range of
heatsink and clamping systems in line with advances in
device voltages and current capability of our semiconductors.
the growing needs of our customers.
Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been
designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and
liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales
representative or Customer Services.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
Datasheet Annotations:
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follows:-
Target Information:
This is the most tentative form of information and represents a very preliminary specification.
No
actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may
change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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suitability of any product or service. The Company reserves the right to alter without prior notice the
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