DS18004 Rev. P-2 1 of 3 BZT52C2V4 - BZT52C51
·Planar Die Construction
·500mW Power Dissipation on Ceramic PCB
·General Purpose, Medium Current
·Ideally Suited for Automated Assembly
Processes
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Forward Voltage @ IF= 10mA VF0.9 V
Power Dissipation (Note 1) Pd500 mW
Thermal Resistance, Junction to Ambient Air (Note 1) RqJA 305 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Notes: 1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Tested with pulses, period = 5ms, pulse width = 300ms.
3. When provided, otherwise, parts are provided with date code only, and type number identifications appears on reel only.
4. f = 1KHz.
Mechanical Data
BZT52C2V4 - BZT52C51
SURFACE MOUNT ZENER DIODE
A B
C
DE
G
H
J
SOD-123
Dim Min Max
A 3.55 3.85
B 2.55 2.85
C 1.40 1.70
D — 1.35
E 0.55 Typical
G 0.25 —
H 0.15 Typical
J — 0.10
All Dimensions in mm
·Case: SOD-123, Plastic
·Terminals: Solderable per MIL-STD-202,
Method 208
·Polarity: Cathode Band
·Marking: Date Code and Type Code or Date
Code only.
Type Code: See Table on Page 2.
·Weight: 0.01 grams (approx.)
DS18004 Rev. P-2 2 of 3 BZT52C2V4 - BZT52C51
Type
Number
Marking
Code
(Note 3)
Zener Voltage Range
(Note 2)
Maximum Zener
Impedance (Note 4)
Maximum
Reverse
Current
Typical
Temperature
Coefficient
@I
ZTC
mV/°C
Test
Current
IZTC
Vz@IZT IZT ZZT @ IZT ZZK @I
ZK IZK IR@ VR
Nom (V) Min (V) Max (V) mA WmA uA V Min Max mA
BZT52C2V4 WX 2.4 2.2 2.6 5 100 600 1.0 50 1.0 -3.5 0 5
BZT52C2V7 W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5
BZT52C3V0 W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5
BZT52C3V3 W3 3.3 3.1 3.5 5 95 600 1.0 5.0 1.0 -3.5 0 5
BZT52C3V6 W4 3.6 3.4 3.8 5 90 600 1.0 5.0 1.0 -3.5 0 5
BZT52C3V9 W5 3.9 3.7 4.1 5 90 600 1.0 3.0 1.0 -3.5 0 5
BZT52C4V3 W6 4.3 4.0 4.6 5 90 600 1.0 3.0 1.0 -3.5 0 5
BZT52C4V7 W7 4.7 4.4 5.0 5 80 500 1.0 3.0 2.0 -3.5 0.2 5
BZT52C5V1 W8 5.1 4.8 5.4 5 60 480 1.0 2.0 2.0 -2.7 1.2 5
BZT52C5V6 W9 5.6 5.2 6.0 5 40 400 1.0 1.0 2.0 -2 2.5 5
BZT52C6V2 WA 6.2 5.8 6.6 5 10 150 1.0 3.0 4.0 0.4 3.7 5
BZT52C6V8 WB 6.8 6.4 7.2 5 15 80 1.0 2.0 4.0 1.2 4.5 5
BZT52C7V5 WC 7.5 7.0 7.9 5 15 80 1.0 1.0 5.0 2.5 5.3 5
BZT52C8V2 WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5
BZT52C9V1 WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5
BZT52C10 WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5
BZT52C11 WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5
BZT52C12 WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5
BZT52C13 WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5
BZT52C15 WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5
BZT52C16 WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5
BZT52C18 WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5
BZT52C20 WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5
BZT52C22 WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5
BZT52C24 WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5
BZT52C27 WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2
BZT52C30 WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2
BZT52C33 WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2
BZT52C36 WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2
BZT52C39 WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2
BZT52C43 WU 43 40.0 46.0 5 100 700 1.0 0.1 32 10.0 12.0 5
BZT52C47 WV 47 44.0 50.0 5 100 750 1.0 0.1 35 10.0 12.0 5
BZT52C51 WW 51 48.0 54.0 5 100 750 1.0 0.1 38 10.0 12.0 5
Electrical Characteristics @ TA= 25°C unless otherwise specified
Notes: 1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Tested with pulses, period = 5ms, pulse width = 300ms.
3. When provided, otherwise, parts are provided with date code only, and type number identifications appears on reel only.
4. f = 1KHz.
DS18004 Rev. P-2 3 of 3 BZT52C2V4 - BZT52C51
0
0.1
0.2
0.3
0.4
0.5
25050
75 100 125 150
P,P
O
WER DISSIPATI
O
N(W)
D
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Dissipation vs Ambient Temperature
A°
0.6
