© Semiconductor Components Industries, LLC, 2016
October, 2016 − Rev. 15 1Publication Order Number:
NTR4501N/D
NTR4501N, NVR4501N
Power MOSFET
20 V, 3.2 A, Single N−Channel, SOT−23
Features
•Leading Planar Technology for Low Gate Charge / Fast Switching
•2.5 V Rated for Low Voltage Gate Drive
•SOT−23 Surface Mount for Small Footprint
•NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
Applications
•Load/Power Switch for Portables
•Load/Power Switch for Computing
•DC−DC Conversion
MAXIMUM RATINGS (TJ= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 20 V
Gate−to−Source Voltage VGS ±12 V
Continuous Drain
Current (Note 1) Steady
State TA = 25°CID3.2 A
TA = 85°C 2.4 A
Steady State Power
Dissipation (Note 1) Steady State PD1.25 W
Pulsed Drain Current tp = 10 msIDM 10.0 A
Operating Junction and Storage Temperature TJ,
Tstg −55 to
150 °C
Continuous Source Current (Body Diode) IS1.6 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s) TL260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient (Note 1) RqJA 100 °C/W
Junction−to−Ambient (Note 2) RqJA 300
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
G
D
S
Device Package Shipping†
ORDERING INFORMATION
20 V 88 mW @ 2.5 V
70 mW @ 4.5 V
RDS(on) Typ
3.6 A
ID Max
(Note 1)
V(BR)DSS
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM &
PIN ASSIGNMENT
2
1
3
N−Channel
3.1 A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
NTR4501NT1G SOT−23
(Pb−Free) 3000 / Tape & Ree
l
TR1 = Device Code for NTR4501N
VR1 = Device Code for NVR4501N
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
3
Drain
1
Gate 2
Source
xR1 MG
G
www.onsemi.com
NVR4501NT1G 3000 / Tape & Ree
l
SOT−23
(Pb−Free)
NTR4501N, NVR4501N
www.onsemi.com
2
Electrical Characteristics (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3) V(BR)DSS VGS = 0 V, ID = 250 mA20 24.5 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient V(BR)DSS/TJ22 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V TJ = 25°C 1.5 mA
VDS = 16 V TJ = 85°C 10 mA
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±12 V ±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage (Note 3) VGS(TH) VGS = VDS, ID = 250 mA0.65 1.2 V
Negative Threshold
Temperature Coefficient VGS(TH)/TJ−2.3 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 4.5 V, ID = 3.6 A 70 80 mW
VGS = 2.5 V, ID = 3.1 A 88 105
Forward Transconductance gFS VDS = 5.0 V, ID = 3.6 A 9 S
CHARGES AND CAPACITANCES
Input Capacitance Ciss VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
200
pF
Output Capacitance Coss 80
Reverse Transfer Capacitance Crss 50
Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 10 V,
ID = 3.6 A
2.4 6.0
nC
Gate−to−Source Gate Charge QGS 0.5
Gate−to−Drain Charge QGD 0.6
SWITCHING CHARACTERISTICS (Note 4)
T urn−On Delay Time td(on)
VGS = 4.5 V, VDS = 10 V,
ID = 3.6 A, RG = 6.0 W
6.5 13
ns
Rise Time tr12 24
T urn−Off Delay Time td(off) 12 24
Fall Time tf3 6
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, ISD = 1.6 A 0.8 1.2 V
Reverse Recovery Time tRR VGS = 0 V,
dIS/dt = 100 A/ms,
IS = 1.6 A
7.1
ns
Charge Time ta5
Discharge Time tb1.9
Reverse Recovery Charge QRR 3.0 nC
3. Pulse Test: Pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTR4501N, NVR4501N
www.onsemi.com
3
VDS ≥ 10 V
VGS = 1.8 V
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
012345678910
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 1. On−Region Characteristics
VGS = 10 V
VGS = 1.6 V
VGS = 1.4 V
VGS = 3.0 V
VGS = 2.0 V TJ = 25°C
8
0.5 1.0 1.5 2.0 2.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 2. Transfer Characteristics
TJ = 25°C
TJ = −55°C
TJ = 125°C
0.25
123 6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
ID = 3.2 A
TJ = 25°C
0.05
0.06
0.07
0.08
0.09
23456
ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
1.4
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
Figure 5. On−Resistance Variation with
Temperature
ID = 3.2 A
VGS = 4.5 V
1.0
10
1000
2 6 10 14 18
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage
Current versus Voltage
VGS = 0 V
TJ = 150°C
TJ = 100°C
IDSS, LEAKAGE (nA)
VGS = 2.5 V
VGS = 4.5 V
150
VGS = 2.2 V
VGS = 1.2 V
6
5
4
3
2
1
0
0.20
0.15
0.10
0.05 45
0.10 TJ = 25°C
1.2
1.0
0.8
0.6 2012 1648
7
NTR4501N, NVR4501N
www.onsemi.com
4
td(on)
0
350
0 2.5 5 7.5 10 15 20
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Crss
Coss
Ciss
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
0
1.0
2.0
4.0
5.0
0 0.5 1.0 1.5 2.0
QG, TOTAL GATE CHARGE (nC)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Gate−to−Source and Drain−to−Source
Voltage versus Total Charge
TJ = 25°C
ID = 3.2 A
QT
QGD
QGS
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
100
1 10 100
10
t, TIME (ns)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
VDS = 10 V
ID = 3.2 A
VGS = 4.5 V
tr
td(off)
tf
RG, GATE RESISTANCE (W)
0
1
2
3
4
0.3 0.6 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
IS, SOURCE CURRENT (AMPS)
Figure 10. Diode Forward Voltage versus
Current
VGS = 0 V
TJ = 25°C
12.5 17.5
300
250
200
150
100
50
3.0
2.5 3.0
15
12
9
6
3
0
VGS
VDS
0.1 1.2
0.1
1
10
100
1000
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10
00
0.1
0.2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
PULSE TIME, tp (s)
Figure 11. Thermal Response
TRANSIENT THERMAL RESISTANCE,
RqJA (°C/W)
NTR4501N, NVR4501N
www.onsemi.com
5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
SOLDERING FOOTPRINT
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
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