SEMICONDUCTOR KTC945B TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity. : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) Low Noise : NF=1dB(Typ.). at f=1kHz N E K Complementary to KTA733B(O, Y, GR class). G J D ) RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC F 1 2 C SYMBOL L CHARACTERISTIC H F 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M MAXIMUM RATING (Ta=25 DIM A B C D E F G H J K L M N 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 60 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 50 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=100 A, IC=0 5 - - V Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A 70 - 700 hFE (Note) DC Current Gain VCE=6V, IC=2mA Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1.0 V fT VCE=10V, IC=10mA - 300 - MHz Transition Frequency Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF Noise Figure NF VCE=6V, IC=0.1mA Rg=10k , f=1kHz - 1.0 10 dB Note : hFE Classification 2001. 9. 14 O:70~140, Y:120~240, Revision No : 2 GR:200~400, BL:350~700 1/2 KTC945B 2001. 9. 14 Revision No : 2 2/2