BSR302N
OptiMOS®2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level (4.5V)
• Avalanche rated
• Footprint compatible to SOT23
• dv/dt rated
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTA=25 °C 3.7 A
TA=70 °C 2.9
Pulsed drain current ID,pulse TA=25 °C 14.7
Avalanche energy, single pulse EAS ID=3.7 A, RGS=25 Ω30 mJ
Reverse diode dv/dtdv/dtID=3.7 A, VDS=16 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage VGS ±20 V
Power dissipation Ptot TA=25 °C 0.5 W
Operating and storage temperature Tj, Tstg -55 ... 150 °C
ESD Class JESD22-A114-HMB 0 (0V to 250V)
Soldering Temperature 260 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
Type Package Tape and Reel Information Marking Lead Free Packing
BSR302N PG-SC-59 L6327 = 3000 pcs. / reel LEs Yes Non dry
PG-SC-59
3
12
VDS 30 V
RDS(on),max VGS=10 V 23 mΩ
VGS=4.5 V 36
ID3.7 A
Product Summary
Rev. 1.3 page 1 2011-06-01
BSR302N
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint RthJA - - 250 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 µA 30 - - V
Gate threshold voltage VGS(th) VDS=VGS , ID=30 µA 1.2 1.7 2
Drain-source leakage current IDSS VDS=30 V, VGS=0 V,
Tj=25 °C --1
μA
VDS=30 V, VGS=0 V,
Tj=150 °C - - 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=4.5 V, ID=2.9 A -2636
mΩ
VGS=10 V, ID=3.7 A -1823
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=3.7 A 12 - S
Values
Rev. 1.3 page 2 2011-06-01
BSR302N
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 564 750 pF
Output capacitance Coss - 202 269
Reverse transfer capacitance Crss -2843
Turn-on delay time td(on) - 6.8 - ns
Rise time tr- 3.2 -
Turn-off delay time td(off) - 16.2 -
Fall time tf- 2.2 -
Gate Charge Characteristics
Gate to source charge Qgs - 1.6 2.2 nC
Gate to drain charge Qgd - 1.1 1.7
Gate charge total Qg- 4.4 6.6
Gate plateau voltage Vplateau - 2.9 - V
Reverse Diode
Diode continous forward current IS- - 0.8 A
Diode pulse current IS,pulse - - 14.7
Diode forward voltage VSD VGS=0 V, IF=3.7 A,
Tj=25 °C - 0.8 1.2 V
Reverse recovery time trr - 13.5 ns
Reverse recovery charge Qrr - 5.0 - nC
VR=15 V, IF=3.7 A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=0 V, VDS=15 V,
f=1 MHz
VDD=15 V, VGS=10 V,
ID=3.7 A, RG=2.7 Ω
VDD=15 V, ID=3.7 A,
VGS=0 to 5 V
Rev. 1.3 page 3 2011-06-01
BSR302N
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
10 µs
100 µs
1 ms
10 ms
DC
102
101
100
10-1
10-2
102
101
100
10-1
10-2
10-3
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
101
100
10-1
10-2
10-3
10-4
103
102
101
100
10-1
tp [s]
ZthJA [K/W]
0
0.1
0.2
0.3
0.4
0.5
0.6
0 40 80 120 160
TA [°C]
Ptot [W]
0
1
2
3
4
0 40 80 120 160
TA [°C]
ID [A]
Rev. 1.3 page 4 2011-06-01
BSR302N
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
3 V
3.5 V
3.7 V
4 V
4.5 V
7 V
10 V
0
10
20
30
40
50
60
0481216
ID [A]
RDS(on) [mΩ]
0
5
10
15
01234
ID [A]
gfs [S]
2.7 V
3 V
3.5 V
3.7 V
4 V
4.5 V
7 V
0
2
4
6
8
10
12
14
16
0123
VDS [V]
ID [A]
25 °C
150 °C
0
2
4
6
8
10
12
01234
VGS [V]
ID [A]
Rev. 1.3 page 5 2011-06-01
BSR302N
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=3.7 A; VGS=10 V VGS(th)=f(Tj); VDS=VGS; ID=30 µA
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
98 %
0
10
20
30
40
-60 -20 20 60 100 140
Tj [°C]
RDS(on) [mΩ]
typ
98 %
2 %
0
0.4
0.8
1.2
1.6
2
2.4
-60 -20 20 60 100 140
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
101
102
103
0 5 10 15 20
VDS [V]
C [pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
102
101
100
10-1
10-2
10-3
0 0.4 0.8 1.2 1.6
VSD [V]
IF [A]
Rev. 1.3 page 6 2011-06-01
BSR302N
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=3.7 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=250 µA
26
28
30
32
34
36
-60 -20 20 60 100 140
Tj [°C]
VBR(DSS) [V]
6 V
15 V
24 V
0
1
2
3
4
5
6
7
8
9
10
0246810
Qgate [nC]
VGS [V]
25 °C
100 °C
125 °C
103
102
101
100
101
100
10-1
tAV [µs]
IAV [A]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
Rev. 1.3 page 7 2011-06-01
BSR302N
Package Outline:
Footprint:
Dimensions in mm
PG-SC59
3x0.4 +0.05
-0.1 M
0.1
0.95 0.95
(0.55)
3±0.1
+0.2
2.8
-0.1
0.15 MAX.
1.1±0.1
0.2+0.1
+0.1
-0.05
0.15
0˚...8˚ MAX.
GPS09473
0.45
±0.15
+0.15
-0.3
1.6
0.1
M
0.1
3
21
0.8
HLG09474
0.91.30.9
1.2
Rev. 1.3 page 8 2011-06-01
BSR302N
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
Rev. 1.3 page 9 2011-06-01
