Number: DB-119
July 2011, Revision C
Page 1
TAK CHEONG ®
SEMICONDUCTOR
200mW SOD-523 SURFACE MOUNT
Very Small Outline Fl at Lead Plastic Package
General Purpose Application
High Speed Switching Diode
Absolute Ma ximum Ra ti ng s TA = 25°C unless otherwise noted
Symbol Parameter Value Units
PD Power Dissipation 200 mW
TSTG Storage Temperature Range -55 to +125 °C
TJ Operating Junction Temperature +125 °C
VRSM Non-Repetitive Peak Reverse Voltage 100 V
IFSM Peak Forward Surge Current
(Pulse Width=1s) 500 mA
IFM Forward Current 200 mA
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Fast Switching Device (TRR <4.0 nS)
High Speed Switching Diodes
Extremely Small SOD-523 Package
Flat Lead SOD-523 Small Outline Plastic Package
Surface Device Type Mounting
RoHS Compliant
Green EMC
Matte Tin(Sn) Lead Finish
Band Indicates Cathode
DEVICE MARKING CODE:
Device Type Device Marking
1SS422 E5
Electrical Characteristics TA = 25°C unless otherwise noted Limits
Symbol Parameter Test Condition
Min Max Unit
BV Breakdown Voltage IR=100µA 100 Volts
IR Reverse Leakage Current VR=85V 100 nA
VF Forward Voltage IF=150mA 1.2 Volts
TRR Reverse Recovery Time IF=10mA
VR=6V
RL=100Ω
4 nS
C Capacitance VR=0.5V, f=1MHZ 4 pF
1SS422