CDBQR0130R-HF
SMD Schottky Barrier Diode
Page 1
REV:C
A
mA
V
V
1
100
30
35
IO
VR
VRRM
IFSM
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
OC
OC
+125
+125
-40TSTG
Tj
Storage temperature
Junction temperature
Average forward current
Reverse voltage
Repetitive peak reverse voltage
Forward current,surge peak
Parameter Conditions Symbol Min Typ
Max
Unit
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Comchip Technology CO., LTD.
mW
125
PD
Power Dissipation
QW-G1099
uA
V
0.5
0.45
IR
VF
Reverse current
Forward voltage
Parameter Conditions Symbol Min Typ
Max
Unit
VR = 10 V
IF = 10 mA
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
Dimensions in inches and (millimeter)
0.020(0.50) Typ.
0.022(0.55)
0.018(0.45)
0.012(0.30) Typ.
0402/SOD-923F
Features
-Low reverse current.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0402/SOD-923F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & BQ
-Mounting position: Any.
-Weight: 0.001 gram(approx.).
Io = 100 mA
VR = 30 Volts
RoHS Device
Halogen Free
RATING AND CHARACTERISTIC CURVES (CDBQR0130R-HF)
SMD Schottky Barrier Diode
Capacitance between terminals (PF)
Reverse voltage (V)
Reverse current ( A )
Reverse voltage (V)
1u
1n
10u
100n
0 10 20 25 30
Fig. 2 - Reverse characteristics
0
20
40
60
80
100
0 25 50 75 100 125
O
Ambient temperature ( C)
Average forward current(%)
Fig.4 - Current derating curve
Fig. 3 - Capacitance between
terminals characteristics
1m
0 1510 20
1
10
100
525 30
100u
15
5
10n
Page 2
REV:C
O
25 C
O
-25 C
O
75 C
O
125 C
Comchip Technology CO., LTD.
570
540
580
560
590
550
AVG:5 68mV
O
Ta=25 C
IF=200mA
n=30pcs
Fig. 5 - VF Dispersion map
600
0
800
400
1000
200
100
300
500
700
900
Fig. 6 - IR Dispersion map
30
0
40
20
50
10
5
15
25
35
45
Fig. 7 - CT Dispersion map
O
Ta=25 C
VR=10V
n=30pcs
AVG:111nA AVG:18.8pF
O
Ta=25 C
F=1MHz
VR=0V
n=10pcs
f = 1 MHz
Ta = 25 C
Forward voltage (mV)
Reverse current (nA)
Capacitance between
terminals(pF)
Forward current (mA )
0.2 0.40
1
100
0.5
0.1
0.8
Forward voltage (V)
Fig. 1 - Forward characteristics
1000
0.6
0.3
0.1 0.7
10
O
-25C
O
25 C
O
75 C
O
125 C
150
QW-G1099
SMD Schottky Barrier Diode
Page 3
REV:C
Comchip Technology CO., LTD.
QW-G1099
Index hole
o
120
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End Start
d
E
F
B W
A
P
P0
P1
D1
D2
D
W1
T
C
Direction of Feed
Reel Taping Specification
Polarity
BCdD D2
D1
E F P P0P1T
SYMBOL
A
W W1
(mm)
(inch) 0.026 0.004±0.045 0.004±0.024 0.004±0.061 + 0.004 7.008 0.04±2.362 MIN. 0.512 0.008±
SYMBOL
(mm)
(inch) 0.069 0.004±0.138 0.002±0.157 0.004±0.157 0.004±0.079 0.004±0.009 0.002±0.315 0.008±0.531 MAX.
0.75 0.10± 1.15 0.10±
4.00 0.10±
1.55 + 0.10
3.50 0.05±1.75 0.10±
60.0 MIN. 13.0 0.20±0.60 0.10±
4.00 0.10± 2.00 0.10± 0.22 0.05± 8.00 0.20± 13.5 MAX.
178 1±
0402
(SOD-923F)
0402
(SOD-923F)
SMD Schottky Barrier Diode
Page 4
REV:C
Comchip Technology CO., LTD.
Marking Code
BQ
Park Number
CDBQR0130R-HF
Marking Code
BQ
QW-G1099
Suggested PAD Layout
SIZE
(inch)
0.030
(mm)
0.750
0.500
0.700
0.020
0.028
1.250 0.049
E0.250 0.010
Standard Package
A
B
C
D
A
C
B
E
D
0402/SOD-923F
Case Type
Qty per Reel
(Pcs)
5000
0402/SOD-923F
Reel Size
(inch)
7
