DATA SH EET
Product data sheet
Supersedes data of 1999 Apr 15 2004 Jan 21
DISCRETE SEMICONDUCTORS
PMBT4401
NPN switching transistor
db
ook, halfpage
M3D088
2004 Jan 21 2
NXP Semiconductors Product data sheet
NPN switching transistor PMBT4401
FEATURES
High current (max. 600 mA)
Low voltage (max. 40 V).
APPLICATIONS
Industrial and consumer switching applicatio ns .
DESCRIPTION
NPN switching tran sistor in a SOT23 plastic package.
PNP complement: PMBT4403.
MARKING
Note
1. * = p : Made in Hong Kong .
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
PMBT4401 *2X
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT23 ) and symbo l .
handbook, halfpage
21
3
MAM255
Top view
2
3
1
ORDERING INFORMATION
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
PMBT4401 plastic surface mounted package; 3 leads SOT23
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter 60 V
VCEO collector-emitter voltage open base 40 V
VEBO emitter-base voltage open collector 6 V
ICcollector current (DC) 600 mA
ICM peak collector current 800 mA
IBM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C; note 1 250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
2004 Jan 21 3
NXP Semiconductors Pr oduct data shee t
NPN switching transistor PMBT4401
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp 300 µs; δ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth (j-a) thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector-base cut-of f current IE = 0; VCB = 60 V 50 nA
IEBO emitter-base cu t-off current IC = 0; VEB = 6 V 50 nA
hFE DC current gain VCE = 1 V; (see Fig.2)
IC = 0.1 mA 20
IC = 1 mA 40
IC = 10 mA 80
IC = 150 mA; note 1 100 300
IC = 500 mA; VCE = 2 V; note 1 40
VCEsat collector-emitter saturation
voltage IC = 150 mA; IB = 15 mA; note 1 400 mV
IC = 500 mA; IB = 50 mA; note 1 750 mV
VBEsat base-emitt er saturation voltage IC = 150 mA; IB = 15 mA; note 1 950 mV
IC = 500 mA; IB = 50 mA; note 1 1.2 V
Cccollector capacitance IE = Ie = 0; VCB = 5 V; f = 1 MHz 8pF
Ceemitter cap a citance IC = Ic = 0; VEB = 500 mV; f = 1 MHz 30 pF
fTtransition freque ncy IC = 20 mA; VCE = 10 V; f = 100 MHz 250 MHz
Switching times (between 10% and 90% levels); (see Fig.3)
ton turn-on time ICon = 150 mA; IBon = 15 mA;
IBoff = 15 mA 35 ns
tddelay time 15 ns
trrise time 20 ns
toff turn-off time 250 ns
tsstorage time 200 ns
tffall time 60 ns
2004 Jan 21 4
NXP Semiconductors Pr oduct data shee t
NPN switching transistor PMBT4401
handbook, full pagewidth
0
300
100
200
MGD811
10111010
2103
hFE
IC mA
VCE = 1 V
Fig.2 DC current gain; typical values.
handbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB(probe)
450
(probe)
450
oscilloscope oscilloscope
V
BB
Vi
V
CC
Fig.3 Test circuit for switching times.
Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf 3 ns.
R1 = 68 ; R2 = 325 ; RB = 325 ; RC = 160 .
VBB = 3.5 V; VCC = 29.5 V.
Oscilloscope: input impedance Zi = 50 .
2004 Jan 21 5
NXP Semiconductors Pr oduct data shee t
NPN switching transistor PMBT4401
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Jan 21 6
NXP Semiconductors Pr oduct data shee t
NPN switching transistor PMBT4401
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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General Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such information.
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reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, au thorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in pe rs onal injury, death or seve re
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefor e s uc h inclusion and/or use is at
the customer’s own risk .
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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infringement and limitation of liability, unless explicitly
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regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/04/pp7 Date of releas e : 2004 Jan 21 Document order number: 9397 750 12462