PUMD20,115 - NEXPERIA

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

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Should be replaced with:

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Kind regards,

Team Nexperia

1. Product proﬁle

1.1 General description

NPN/PNP Resistor-Equipped Transistors (RET).

1.2 Features

■Built-in bias resistors

■Simpliﬁes circuit design

■Reduces component count

■Reduces pick and place costs

1.3 Applications

■Low current peripheral driver

■Control of IC inputs

■Replaces general-purpose transistors in digital applications

1.4 Quick reference data

PEMD20; PUMD20

NPN/PNP resistor-equipped transistors;

R1 = 2.2 kΩ, R2 = 2.2 kΩ

Rev. 01 — 2 May 2005 Product data sheet

Table 1: Product overview

Type number Package PNP/PNP

complement NPN/NPN

complement

Philips JEITA

PEMD20 SOT666 - PEMB20 PEMH20

PUMD20 SOT363 SC-88 PUMB20 PUMH20

Table 2: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - 50 V

IOoutput current (DC) - - 100 mA

R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ

R2/R1 bias resistor ratio 0.8 1 1.2

Product data sheet Rev. 01 — 2 May 2005 2 of 10

Philips Semiconductors PEMD20; PUMD20

NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

2. Pinning information

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

Table 3: Pinning

Pin Description Simpliﬁed outline Symbol

1 GND (emitter) TR1

2 input (base) TR1

3 output (collector) TR2

4 GND (emitter) TR2

5 input (base) TR2

6 output (collector) TR1

001aab555

6 45

1 32

65 4

123

TR1 TR2

R2 R1

006aaa143

Table 4: Ordering information

Type number Package

Name Description Version

PEMD20 - plastic surface mounted package; 6 leads SOT666

PUMD20 SC-88 plastic surface mounted package; 6 leads SOT363

Table 5: Marking codes

Type number Marking code[1]

PEMD20 6H

PUMD20 T6*

Product data sheet Rev. 01 — 2 May 2005 3 of 10

Philips Semiconductors PEMD20; PUMD20

NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reﬂow soldering is the only recommended soldering method.

Table 6: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor; for the PNP transistor with negative polarity

VCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base - 50 V

VEBO emitter-base voltage open collector - 10 V

VIinput voltage TR1

positive - +12 V

negative - −10 V

input voltage TR2

positive - +10 V

negative - −12 V

IOoutput current (DC) - 100 mA

ICM peak collector current - 100 mA

Ptot total power dissipation Tamb ≤25 °C

SOT363 [1] - 200 mW

SOT666 [1] [2] - 200 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Per device

Ptot total power dissipation Tamb ≤25 °C

SOT363 [1] - 300 mW

SOT666 [1] [2] - 300 mW

Product data sheet Rev. 01 — 2 May 2005 4 of 10

Philips Semiconductors PEMD20; PUMD20

NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reﬂow soldering is the only recommended soldering method.

7. Characteristics

Table 7: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

Rth(j-a) thermal resistance from

junction to ambient in free air

SOT363 [1] - - 625 K/W

SOT666 [1] [2] - - 625 K/W

Per device

Rth(j-a) thermal resistance from

junction to ambient in free air

SOT363 [1] - - 416 K/W

SOT666 [1] [2] - - 416 K/W

Table 8: Characteristics

amb

= 25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Per transistor; for the PNP transistor with negative polarity

ICBO collector-base cut-off

current VCB = 50 V; IE= 0 A - - 100 nA

ICEO collector-emitter

cut-off current VCE = 30 V; IB=0A - - 1 µA

VCE = 30 V; IB=0A;

Tj= 150 °C--50µA

IEBO emitter-base cut-off

current VEB =5V; I

C=0A - - 2 mA

hFE DC current gain VCE =5V; I

C=20mA 30 - -

VCEsat collector-emitter

saturation voltage IC= 10 mA; IB= 0.5 mA - - 150 mV

VI(off) off-state input

voltage VCE =5V; I

C= 1 mA - 1.2 0.5 V

VI(on) on-state input

voltage VCE = 0.3 V; IC=20mA 2 1.6 - V

R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ

R2/R1 bias resistor ratio 0.8 1 1.2

Cccollector capacitance VCB = 10 V; IE=i

e=0A;

f = 1 MHz

TR1 (NPN) - - 2.5 pF

TR2 (PNP) - - 3 pF

Product data sheet Rev. 01 — 2 May 2005 5 of 10

Philips Semiconductors PEMD20; PUMD20

NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

VCE =5V

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−40 °C

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−40 °C

Fig 1. TR1 (NPN): DC current gain as a function of

collector current; typical values Fig 2. TR1 (NPN): Collector-emitter saturation voltage

as a function of collector current; typical values

VCE = 0.3 V

(1) Tamb =−40 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

VCE =5V

(1) Tamb =−40 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

Fig 3. TR1 (NPN): On-state input voltage as a function

of collector current; typical values Fig 4. TR1 (NPN): Off-state input voltage as a function

of collector current; typical values

IC (mA)

10−1102

101

006aaa015

102

103

hFE

(3)

(2)

(1)

IC (mA)

110

006aaa014

102

103

VCEsat

(mV)

(1)

(3)

(2)

IC (mA)

10−1102

101

006aaa016

102

VI(on)

(V)

10−1

(1)

(3)

(2)

006aaa017

IC (mA)

10−210110−1

VI(off)

(V)

10−1

(1)

(2)

(3)

Product data sheet Rev. 01 — 2 May 2005 6 of 10

Philips Semiconductors PEMD20; PUMD20

NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

VCE =−5V

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−40 °C

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−40 °C

Fig 5. TR2 (PNP): DC current gain as a function of

collector current; typical values Fig 6. TR2 (PNP): Collector-emitter saturation voltage

as a function of collector current; typical values

VCE =−0.3 V

(1) Tamb =−40 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

VCE =−5V

(1) Tamb =−40 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

Fig 7. TR2 (PNP): On-state input voltage as a function

of collector current; typical values Fig 8. TR2 (PNP): Off-state input voltage as a function

of collector current; typical values

IC (mA)

−10−1−102

−10−1

006aaa192

102

103

hFE

(1)

(2)

(3)

IC (mA)

−1−102

−10

006aaa193

−102

−103

VCEsat

(mV)

−10

(1) (2) (3)

IC (mA)

−10−1−102

−10−1

006aaa194

−10

−1

−102

VI(on)

(V)

−10−1

(3)

(2)(1)

006aaa195

IC (mA)

−10−2−10−1−10−1

−1

−10

VI(off)

(V)

−10−1

(1)

(3)

(2)

Product data sheet Rev. 01 — 2 May 2005 7 of 10

Philips Semiconductors PEMD20; PUMD20

NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

8. Package outline

9. Packing information

[1] For further information and the availability of packing methods, see Section 15.

[2] T1: normal taping

[3] T2: reverse taping

Fig 9. Package outline SOT363 (SC-88) Fig 10. Package outline SOT666

04-11-08Dimensions in mm

0.25

0.10

0.3

0.2

pin 1

index

1.3

0.65

2.2

2.0 1.35

1.15

2.2

1.8 1.1

0.8

0.45

0.15

132

465

Dimensions in mm 04-11-08

1.7

1.5

1.7

1.5

1.3

1.1

0.18

0.08

0.27

0.17

0.5

pin 1 index

123

456

0.6

0.5

0.3

0.1

Table 9: Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 4000 8000 10000

PEMD20 SOT666 2 mm pitch, 8 mm tape and reel - - -315 -

4 mm pitch, 8 mm tape and reel - -115 - -

PUMD20 SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165

Product data sheet Rev. 01 — 2 May 2005 8 of 10

Philips Semiconductors PEMD20; PUMD20

NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

10. Revision history

Table 10: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

PEMD20_PUMD20_1 20050502 Product data sheet - 9397 750 14419 -

Philips Semiconductors PEMD20; PUMD20

NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

Product data sheet Rev. 01 — 2 May 2005 9 of 10

11. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

14. Trademarks

Notice — All referenced brands, product names, service names and

trademarks are the property of their respective owners.

15. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Level Data sheet status[1] Product status[2] [3] Deﬁnition

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights. Date of release: 2 May 2005

Document number: 9397 750 14419

Published in The Netherlands

Philips Semiconductors PEMD20; PUMD20

NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

16. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 7

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . . 9

12 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

15 Contact information . . . . . . . . . . . . . . . . . . . . . 9