AUIRF2907Z - International Rectifier

AUIRF2907Z

07/23/2010

www.irf.com 1

AUTOMOTIVE GRADE

HEXFET® Power MOSFET

PD - 97545

Features

●Advanced Process Technology

●Ultra Low On-Resistance

●175°C Operating Temperature

●Fast Switching

●Repetitive Avalanche Allowed up to

Tjmax

●Lead-Free, RoHS Compliant

●Automotive Qualified *

Description

Specifically designed for Automotive applications, this

HEXFET® Power MOSFET utilizes the latest process-

ing techniques to achieve extremely low on-resistance

per silicon area. Additional features of this design are

a 175°C junction operating temperature, fast switching

speed and improved repetitive avalanche rating . These

features combine to make this design an extremely

efficient and reliable device for use in Automotive

applications and a wide variety of other applications.

GDS

Gate Drain Source

TO-220AB

AUIRF2907Z

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (TA) is 25°C, unless otherwise specified.

HEXFET® is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

Parameter Units

@ T

= 25°C Continuous Drain Current, V

@ 10V (Silicon Limited) A

@ T

= 100°C Continuous Drain Current, V

@ 10V (Silicon Limited)

@ T

= 25°C Continuous Drain Current, V

@ 10V

(Package Limited)

Pulsed Drain Current

= 25°C Maximum Power Dissipation W

Linear Derating Factor W/°C

Gate-to-Source Voltage V

Single Pulse Avalanche Energy (Thermally Limited)

(tested) Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and °C

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case )

Mounting torque, 6-32 or M3 screw

Thermal Resistance

Parameter Typ. Max. Units

θJC

Junction-to-Case

––– 0.50

θCS

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

θJA

Junction-to-Ambient ––– 62

Max.

170

120

680

10 lbf•in (1.1N•m)

300

2.0

± 20

270

690

See Fig.12a,12b,15,16

300

-55 to + 175

V(BR)DSS 75V

RDS(on) max. 4.5mΩ

ID (Silicon Limited) 170A

ID (Package Limited) 75A

AUIRF2907Z

2www.irf.com

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Limited by TJmax, starting TJ = 25°C, L=0.095mH,

RG = 25Ω, IAS = 75A, VGS =10V.

Part not recommended for use above this value.

ISD ≤ 75A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C.

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

Coss eff. is a fixed capacitance that gives the same

charging time as Coss while VDS is rising from

0 to 80% VDSS.

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical

repetitive avalanche performance.

This value determined from sample failure population,

starting TJ = 25°C, L=0.095mH, RG = 25Ω, IAS = 75A, VGS =10V.

Rθ is measured at TJ of approximately 90°C.

TO-220 device will have an Rth of 0.45°C/W.

Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. T

p. Max. Units

V(BR)DSS Drain-to-Source Breakdown Volta

e75––––––V

∆ΒVDSS

∆TJ Breakdown Volta

e Temp. Coefficient ––– 0.069 ––– V/°C

RDS(on) Static Drain-to-Source On-Resistance ––– 3.5 4.5 mΩ

VGS(th) Gate Threshold Volta

e 2.0 ––– 4.0 V

fs Forward Transconductance 180 ––– ––– S

IDSS Drain-to-Source Leaka

e Current ––– ––– 20

––– ––– 250

IGSS Gate-to-Source Forward Leaka

e ––– ––– 200 nA

Gate-to-Source Reverse Leaka

e ––– ––– -200

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. T

p. Max. Units

QgTotal Gate Char

e ––– 180 270

Qgs Gate-to-Source Char

e ––– 46 ––– nC

Qgd Gate-to-Drain ("Miller") Char

e ––– 65 –––

td(on) Turn-On Dela

Time –––19–––ns

trRise Time ––– 140 –––

td(off) Turn-Off Dela

Time –––97–––

tfFall Time ––– 100 –––

LDInternal Drain Inductance ––– 5.0 ––– nH Between lead,

6mm (0.25in.)

LSInternal Source Inductance ––– 13 ––– from packa

and center of die contact

Ciss Input Capacitance ––– 7500 ––– pF

Coss Output Capacitance ––– 970 –––

Crss Reverse Transfer Capacitance ––– 510 –––

Coss Output Capacitance ––– 3640 –––

Coss Output Capacitance ––– 650 –––

Coss eff. Effective Output Capacitance ––– 1020 –––

Diode Characteristics

Parameter Min. T

p. Max. Units

ISContinuous Source Current ––– ––– 75

(Body Diode) A

ISM Pulsed Source Current ––– ––– 680

(Body Diode)

c

VSD Diode Forward Voltage ––– ––– 1.3 V

trr Reverse Recovery Time ––– 41 61 ns

Qrr Reverse Recover

Char

e ––– 59 89 nC

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

RG = 2.5Ω

ID = 75A

VDS = 25V, ID = 75A

VDD = 38V

ID = 75A

VGS = 20V

VGS = -20V

VDS = 60V

VGS = 10V

Conditions

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 10V

MOSFET symbol

VGS = 0V

VDS = 25V

VGS = 0V, VDS = 60V, ƒ = 1.0MHz

Conditions

VGS = 0V, VDS = 0V to 60V

ƒ = 1.0MHz, See Fig. 5

TJ = 25°C, IF = 75A, VDD = 38V

di/dt = 100A/

TJ = 25°C, IS = 75A, VGS = 0V

showing the

integral reverse

p-n junction diode.

VDS = VGS, ID = 250µA

VDS = 75V, VGS = 0V

VDS = 75V, VGS = 0V, TJ = 125°C

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 75A

AUIRF2907Z

www.irf.com 3

 Qualification standards can be found at International Rectifiers web site: http//www.irf.com/

 Exceptions to AEC-Q101 requirements are noted in the qualification report.

Qualification Information†

TO-220AB N/A

RoHS Compliant Yes

ESD

Machine Model Class M4 (425V)

AEC-Q101-002

Human Body Model Class H2 (4000V)

AEC-Q101-001

Charged Device Model Class C4 (1000V)

AEC-Q101-005

Qualification Level

Automotive

(per AEC-Q101)

††

Comments: This part number(s) passed Automotive

qualification. IR’s Industrial and Consumer qualification

level is granted by extension of the higher Automotive

level.

Moisture Sensitivity Level

AUIRF2907Z

4www.irf.com

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance

vs. Drain Current

0.1 110 100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

ID, Drain-to-Source Current (A)

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

≤60µs PULSE WIDTH

Tj = 25°C

4.5V

0.1 110 100

VDS, Drain-to-Source Voltage (V)

100

1000

ID, Drain-to-Source Current (A)

4.5V

≤60µs PULSE WIDTH

Tj = 175°C

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

2 4 6 8 10

VGS, Gate-to-Source Voltage (V)

0.1

100

1000

ID, Drain-to-Source Current (Α)

TJ = 25°C

TJ = 175°C

VDS = 25V

≤60µs PULSE WIDTH

0 25 50 75 100 125 150

ID,Drain-to-Source Current (A)

100

150

200

Gfs, Forward Transconductance (S)

TJ = 25°C

TJ = 175°C

VDS = 10V

380µs PULSE WIDTH

AUIRF2907Z

www.irf.com 5

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

110 100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C, Capacitance(pF)

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

0 50 100 150 200

QG Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

VGS, Gate-to-Source Voltage (V)

VDS= 60V

VDS= 38V

VDS= 15V

ID= 90A

0.0 0.5 1.0 1.5 2.0 2.5

VSD, Source-to-Drain Voltage (V)

100

1000

ISD, Reverse Drain Current (A)

TJ = 25°C

TJ = 175°C

VGS = 0V

1 10 100

VDS, Drain-to-Source Voltage (V)

0.1

100

1000

10000

ID, Drain-to-Source Current (A)

OPERATION IN THIS AREA

LIMITED BY R DS(on)

Tc = 25°C

Tj = 175°C

Single Pulse

100µsec

1msec

10msec

Limited by package

nce

AUIRF2907Z

6www.irf.com

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current vs.

Case Temperature

Fig 10. Normalized On-Resistance

vs. Temperature

-60 -40 -20 020 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

RDS(on) , Drain-to-Source On Resistance

(Normalized)

ID = 90A

VGS = 10V

25 50 75 100 125 150 175

TC , Case Temperature (°C)

100

120

140

160

180

ID, Drain Current (A)

Limited By Package

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

Thermal Response ( Z thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)

0.279 0.000457

0.221 0.003019

τJ

τ1

τ2

R1R2

τC

Ci i/Ri

Ci= τi/Ri

AUIRF2907Z

www.irf.com 7

QGS QGD

Charge

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

Fig 14. Threshold Voltage vs. Temperature

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

VGS

VCC

DUT

-75 -50 -25 025 50 75 100 125 150 175 200

TJ , Temperature ( °C )

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS(th) Gate threshold Voltage (V)

ID = 250µA

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

200

400

600

800

1000

1200

EAS , Single Pulse Avalanche Energy (mJ)

TOP 9.0A

13A

BOTTOM 75A

AUIRF2907Z

8www.irf.com

Fig 15. Typical Avalanche Current Vs.Pulsewidth

Fig 16. Maximum Avalanche Energy

vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of Tjmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 12a, 12b.

4. PD (ave) = Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. Iav = Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed

Tjmax (assumed as 25°C in Figure 15, 16).

tav = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Iav = 2DT/ [1.3·BV·Zth]

EAS (AR) = PD (ave)·tav

1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

0.1

100

Avalanche Current (A)

0.05

Duty Cycle = Single Pulse

0.10

Allowed avalanche Current vs

avalanche pulsewidth, tav

assuming ∆Tj = 25°C due to

avalanche losses

0.01

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

100

150

200

250

300

EAR , Avalanche Energy (mJ)

TOP Single Pulse

BOTTOM 1% Duty Cycle

ID = 75A

AUIRF2907Z

www.irf.com 9

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D = P. W .

Period

* V

GS = 5V for Logic Level Devices







RGVDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T



VDS

90%

10%

VGS

d(on)

d(off)

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

10V

VDD

Fig 18a. Switching Time Test Circuit

Fig 18b. Switching Time Waveforms

AUIRF2907Z

10 www.irf.com

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

TO-220AB packages are not recommended for Surface Mount Application.

TO-220AB Part Marking Information

AUIRF2907Z

YWWA

XX or XX

Date Code

Y= Year

WW= Work Week

A= Automotive, LeadFree

Part Number

IR Logo

Lot Code

AUIRF2907Z

www.irf.com 11

Ordering Information

Base

art Packa

e T

e Standard Pac

Com

lete Part Number

Form Quantit

AUIRF2907Z TO-220 Tube 50 AUIRF2907Z

AUIRF2907Z

12 www.irf.com

IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsid-

iaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other

changes to its products and services at any time and to discontinue any product or services without notice.

Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific

requirements with regards to product discontinuance and process change notification. All products are sold

subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in

accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent

IR deems necessary to support this warranty. Except where mandated by government requirements, testing

of all parameters of each product is not necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible

for their products and applications using IR components. To minimize the risks with customer products and

applications, customers should provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without

alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduc-

tion of this information with alterations is an unfair and deceptive business practice. IR is not responsible or

liable for such altered documentation. Information of third parties may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for

that product or service voids all express and any implied warranties for the associated IR product or service

and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical

implant into the body, or in other applications intended to support or sustain life, or in any other application

in which the failure of the IR product could create a situation where personal injury or death may occur. Should

Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify

and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even

if such claim alleges that IR was negligent regarding the design or manufacture of the product.

IR products are neither designed nor intended for use in military/aerospace applications or environments

unless the IR products are specifically designated by IR as military-grade or “enhanced plastic.” Only products

designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such

use of IR products which IR has not designated as military-grade is solely at the Buyer’s risk, and that they

are solely responsible for compliance with all legal and regulatory requirements in connection with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the

specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part

number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated

products in automotive applications, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

233 Kansas St., El Segundo, California 90245

Tel: (310) 252-7105