DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS8050 NPN medium power 25 V transistor Product specification Supersedes data of 2002 Nov 18 2004 Aug 10 Philips Semiconductors Product specification NPN medium power 25 V transistor FEATURES PSS8050 QUICK REFERENCE DATA * High total power dissipation SYMBOL * High current capability. PARAMETER MAX. UNIT VCEO collector-emitter voltage 25 V IC collector current (DC) 1.5 A APPLICATIONS * Medium power switching and muting PINNING * Amplification PIN * Portable radio output amplifier (class-B, push-pull). DESCRIPTION DESCRIPTION 1 collector 2 base 3 emitter NPN transistor in a SOT54 (TO-92) plastic package. PNP complement: PSS8550. handbook, halfpage MARKING TYPE NUMBER 1 2 3 MARKING CODE MSB033 PSS8050C S8050C PSS8050D S8050D Fig.1 Simplified outline (SOT54). LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 40 VCEO collector-emitter voltage open base - 25 V VEBO emitter-base voltage open collector - 6 V IC collector current (DC) - 1.5 A ICM peak collector current - 2 A IB base current (DC) - 300 mA IBM peak base current - 1 A Ptot total power dissipation Tamb 25 C; note 1 - 850 mW Tamb 25 C; note 2 - 900 mW Tamb 25 C; note 3 - 1 W +150 C V Tstg storage temperature -65 Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Operated under pulsed conditions: pulse width tp 1 s; duty cycle 0.75%. 2004 Aug 10 2 Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT in free air; note 1 147 K/W in free air; note 2 139 K/W in free air; note 3 125 K/W Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Operated under pulsed conditions: pulse width tp 1 s; duty cycle 0.75%. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = 35 V; IE = 0 - - 100 nA VCB = 35 V; IE = 0; Tamb = 150 C - - 50 A ICEO collector-emitter cut-off current VCE = 25 V; IB = 0 - - 100 nA IEBO emitter-base cut-off current VEB = 6 V; IC = 0 - - 100 nA hFE DC current gain IC = 5 mA; VCE = 1 V 45 - - IC = 800 mA; VCE = 1 V 40 - - PSS8050C 120 - 200 PSS8050D 160 - 300 DC current gain IC = 100 mA; VCE = 1 V VCEsat collector-emitter saturation voltage IC = 800 mA; IB = 80 mA - 165 500 mV VBEsat base-emitter saturation voltage IC = 800 mA; IB = 80 mA - - 1.2 V VBEon base-emitter turn-on voltage IC = 10 mA; VCE = 1 V - - 1 V fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 100 - - MHz Cc collector capacitance VCB = 10 V; IE = ie = 0; f = 1 MHz - - 10 pF 2004 Aug 10 3 Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050 MLD946 400 MLD947 1200 handbook, halfpage handbook, halfpage hFE VBE (mV) 1000 300 (1) (1) 800 200 (2) (2) 600 (3) 100 (3) 400 0 10-1 1 10 102 200 10-1 103 104 IC (mA) 1 PSS8050C VCE = 1 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. PSS8050C VCE = 1 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MLD948 103 handbook, halfpage 10 102 103 104 IC (mA) Base-emitter voltage as a function of collector current; typical values. MLD950 1400 handbook, halfpage VBEsat (mV) VCEsat (mV) 1000 (1) (2) 102 (1) (3) (2) 600 (3) 10 10-1 1 10 102 200 10-1 103 104 IC (mA) 1 PSS8050C IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. PSS8050C IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Aug 10 4 10 102 103 104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050 MLD949 103 handbook, halfpage MLD951 2.5 IC handbook, halfpage RCEsat (A) () (1) 2 (2) (3) (4) (5) (6) 102 1.5 (7) 10 (8) 1 (9) 1 (10) (1) 0.5 (2) (3) 0 10-1 1 10 102 0 103 104 IC (mA) 0 0.5 2 1.5 VCE (V) PSS8050C IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. PSS8050C (1) IB = 55 mA. (2) IB = 49.5 mA. (3) IB = 44 mA. Fig.6 Fig.7 Equivalent on-resistance as a function of collector current; typical values. 2004 Aug 10 1 5 (4) IB = 38.5 mA. (5) IB = 33 mA. (6) IB = 27.5 mA. (7) IB = 22 mA. (8) IB = 16.5 mA. (9) IB = 11 mA. (10) IB = 5.5 mA. Collector current as a function of collector-emitter voltage; typical values. Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050 MLD952 400 MLD953 1200 handbook, halfpage handbook, halfpage hFE VBE (mV) 1000 (1) 300 (1) 800 (2) 200 (2) 600 (3) 100 (3) 400 0 10-1 1 102 10 200 10-1 103 104 IC (mA) 1 PSS8050D VCE = 1 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. PSS8050D VCE = 1 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.8 Fig.9 DC current gain as a function of collector current; typical values. MLD954 103 handbook, halfpage 10 102 103 104 IC (mA) Base-emitter voltage as a function of collector current; typical values. MLD956 1400 handbook, halfpage VCEsat VBEsat (mV) (mV) 102 1000 (1) (1) (2) (2) (3) (3) 600 10 1 10-1 1 10 102 200 10-1 103 104 IC (mA) 1 10 102 103 104 IC (mA) PSS8050D IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. PSS8050D IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Aug 10 6 Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050 MLD955 103 handbook, halfpage MLD957 2.5 IC handbook, halfpage RCEsat (1) (A) () (2) (3) (4) (5) (6) 2 102 1.5 (7) 10 (8) (9) 1 (10) 1 (1) 0.5 (2) (3) 0 10-1 1 10 102 0 103 104 IC (mA) 0 0.5 1 2 1.5 VCE (V) PSS8050D IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. PSS8050D (1) IB = 55 mA. (2) IB = 49.5 mA. (3) IB = 44 mA. Fig.12 Equivalent on-resistance as a function of collector current; typical values. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 2004 Aug 10 7 (4) IB = 38.5 mA. (5) IB = 33 mA. (6) IB = 27.5 mA. (7) IB = 22 mA. (8) IB = 16.5 mA. (9) IB = 11 mA. (10) IB = 5.5 mA. Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 2004 Aug 10 REFERENCES IEC JEDEC JEITA TO-92 SC-43A 8 EUROPEAN PROJECTION ISSUE DATE 97-02-28 04-06-28 Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Aug 10 9 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA76 (c) Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp10 Date of release: 2004 Aug 10 Document order number: 9397 750 13682