TOSHIBA 2SA1943 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SA1943 POWER AMPLIFIER APPLICATIONS Unit in mm 20.5MAX. #33 0.2 2 @ Complementary to 25C5200 1 -|-* pe @ Recommended for 100 W High Fidelity Audio Frequency | 2 . oS of A Amplifier Output Stage. n alc , MAXIMUM RATINGS (Ta = 25C) S +i CHARACTERISTIC SYMBOL | RATING UNIT $25 | 3 1.0 - 0.25 Collector-Base Voltage VCBO 230 Vv 5a5+0.15 5 4540.15 Collector-Emitter Voltage VCEO 230 Vv Emitter-Base Voltage VEBO 5 Vv aS a Collector Current Ic 15 A *e nl Base Current Ip 1.5 A + Collector Power Dissipation P 150 W 1. BASE (Te = 25C) 2. COLLECTOR (HEAT SINK) Junction Temperature Tj 150 C 3. EMITTER Storage Temperature Range Tstg 55~150 C JEDEC _ EIAJ TOSHIBA 2-21F1A ELECTRICAL CHARACTERISTICS (Ta = 25C) Weight : 9.75 g (Typ.) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current IcBo Vcp = 2380V, Ip = 0 |-5.0] A Emitter Cut-off Current IkBO VeBp = -5V, Ic =0 | -5.0| A Collector-Emitter Breakdown Voltage 'V (BR) CEO| Ic = 50mA, Ip = 0 230} Vv hFE (1) Vv = -5V,I = -1A 55| 160 DC Current Gain (Note) CE c hrp(2) |VoR = -5V,IG=-7A 35 60; Collector-Emitter Saturation Voltage VCE (sat) |Ic = 8A, Ip = -0.8A 15/-3.0|] V Base-Emitter Voltage VBE VcE=-5V,Ic = -7A | -10/-15]) V Transition Frequency fp VcE = -5V,I=--1A 30; | MHz Collector Output Capacitance | Cop Ves = 10V, Ip = 0, 360 | pF o f= 1 MHz (Note) : hpp (1) Classification R: 55~110, O : 80~160 QOQ7O7EAA2 @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfu failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook" etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. nection or 2000-10-27 1/3TOSHIBA Ic (A) COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE VcR (sat) () I VCE MMON EMITTER 'c = 25C -2 -4 -6 -8 -10 COLLECTOR-EMITTER VOLTAGE Vcf (V) VCE (sat) Ic Te = 100C 25 COMMON EMITTER Ic/Ig = 10 0.01 -0.1 -1 10 100 COLLECTOR CURRENT Ic (A) Ic (A COLLECTOR CURRENT DC CURRENT GAIN bpp Iq (A) COLLECTOR CURRENT 300 100 30 10 2SA1943 Ic VBE MMON EMITTER CE=-5V Te = 100C -0.4 -0.8 -12 -16 2.0 BASE-EMITTER VOLTAGE VpE (V) hrE Ic Te = 100C 25 25 COMMON EMITTER Vom = -5V -0.1 -1 10 100 3 0.01 COLLECTOR CURRENT I (A) SAFE OPERATING AREA 50 Hc. MAX. (PULSED) 3X x 30TTO MAX. NTN (CONTINUOUS) | _ N N \ L-10 msiX 10 t Terre NY \. i TTP ritt 7) N \ 100 ms \ 5 \ i \ \ -3|DC OPERATION \ k \ | | Te = 25C N \ \ 1 th 4 \ -05 \-\ -0.3 \ % SINGLE \\ NONREPETITIVE PULSE Te = 25C 01] CURVES MUST BE x DERATED LINEARLY _0.05| WITH INCREASE IN EVcgo MAX. TEMPERATURE. Ht 0.03 3 10 30 100 300 1000 COLLECTOR-EMITTER VOLTAGE VcE (V) 000707EAA2' @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 2000-10-27 2/3TOSHIBA 2SA1943 rth tw 10 CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. (SINGLE NONREPETITIVE PULSE) 1 INFINITE HEAT SINK CCIW) Tth 0.1 TRANSIENT THERMAL RESISTANCE 0.01 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH tw (s) 2000-10-27 3/3