© 2003 IXYS All rights reserved
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
Weight 30 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1mA 550 V
VGS(th) VDS = VGS, ID = 8mA 2.5 5.0 V
IGSS VGS = ±30 V, VDS = 0 ±200 nA
IDSS VDS = VDSS TJ = 25°C 100 µA
VGS = 0 V TJ = 125°C5 mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 72 mΩ
Note 1
DS99030B(10/03)
HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
IXFN 72N55Q2 VDSS = 550 V
ID25 = 72 A
RDS(on)= 72 mΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 550 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ550 V
VGS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C72A
IDM TC= 25°C, pulse width limited by TJM 288 A
IAR TC= 25°C72A
EAR TC= 25°C60mJ
EAS TC= 25°C 5.0 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 20 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 890 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOL 50/60 Hz, RMS, t = 1 minute 2500 V
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Double metal process for low
gate resistance
•miniBLOC, with Aluminium nitride
isolation
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
•DC-DC converters
•Switched-mode and resonant-mode
power supplies
•DC choppers
•Pulse generators
Advantages
•Easy to mount
•Space savings
•High power density
Preliminary Data Sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 72N55Q2
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25 Note 1 40 57 S
Ciss 10500 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1500 pF
Crss 230 pF
td(on) 30 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 23 ns
td(off) RG = 1 Ω (External) 58 ns
tf10 ns
Qg(on) 258 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 65 nC
Qgd 123 nC
RthJC 0.14 K/W
RthCK 0.05 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 72 A
ISM Repetitive; 288 A
pulse width limited by TJM
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr 250 ns
QRM 1.2 µC
IRM 8A
IF = 25A
-di/dt = 100 A/µs
VR = 100 V
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
miniBLOC, SOT-227 B Outline
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
© 2003 IXYS All rights reserved
IXFN 72N55Q2
Fig. 2. Extended Output Characte ristics
@ 25 deg. C
0
20
40
60
80
100
120
140
160
180
0 2 4 6 8 101214161820
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
5V
6V
7V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
9
18
27
36
45
54
63
72
024681012
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
9
18
27
36
45
54
63
72
0123456
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D25
V
alue vs.
Junction Temperature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S (on)
- Normalize
d
I
D
= 72A
I
D
= 36A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Normalized to I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0 20 40 60 80 100 120 140 160 180
I
D
- Amperes
R
D S (on)
- Normalize
d
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 72N55Q2
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Fig. 11. Capacitance
100
1000
10000
100000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - pF
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 40 80 120 160 200 240 280
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 275V
I
D
= 36A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
10
20
30
40
50
60
70
80
90
100
3.544.555.566.57
V
G S
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 12. Maxim um Transient Thermal
Resistance
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
1 10 100 1000
Pulse Width - milliseconds
R
(th) J C
-
(ºC/W)
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
0 20 40 60 80 100 120 140 160
I
D
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
20
40
60
80
100
120
140
160
180
200
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V
S D
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
