CONFIDENTIAL MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1035-C 1 of 7
CM2400HC-34N
●IC ……………………… 2400 A
●VCES …………………… 1700 V
●Insulated Type
●1-element in a Pack
●AlSiC Baseplate
●Trench Gate IGBT : CSTBTTM
●Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
Prepared by
Date
S.Iura Revision: C
I.Umezaki 5-Sep.-2011
COMPANY PROPRIETARY
NOT TO BE REPRODUCED OR DISCLOSED WITHOUT SPECIFIC
WRITTEN PERMISSION OF MITSUBISHI ELECTRIC CORPORATION
CONFIDENTIAL MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1035-C 2 of 7
MAXIMUM RATINGS
Symbol Item Conditions Ratings Unit
VCES Collector-emitter voltage VGE = 0V, Tj = 25 °C 1700 V
VGES Gate-emitter voltage VCE = 0V, Tj = 25 °C ± 20 V
IC DC, Tc = 75 °C 2400 A
ICM Collector current Pulse (Note 1) 4800 A
IE DC 2400 A
IEM Emitter current (Note 2) Pulse (Note 1) 4800 A
Pc Maximum power dissipation (Note 3) Tc = 25 °C, IGBT part 13100 W
Viso Isolation voltage RMS, sinusoidal, f = 60Hz, t = 1min. 4000 V
Tj Junction temperature −40 ~ +150 °C
Top Operating temperature −40 ~ +125 °C
Tstg Storage temperature −40 ~ +125 °C
Tpsc Maximum short circuit pulse width VCC =1200V, VCE ≤ VCES, VGE =15V, Tj =125°C 10 µs
ELECTRICAL CHARACTERISTICS
Limits
Symbol Item Conditions
Min Typ Max Unit
Tj = 25 °C — — 8.0
ICES Collector cutoff current VCE = VCES, VGE = 0V Tj = 125 °C — 6.0 16.0 mA
VGE(th) Gate-emitter threshold voltage VCE = 10 V, IC = 240 mA, Tj = 25 °C 6.0 7.0 8.0 V
IGES Gate leakage current VGE = VGES, VCE = 0V, Tj = 25°C — — 0.5 µA
Cies Input capacitance — 352 — nF
Coes Output capacitance — 19.2 — nF
Cres Reverse transfer capacitance
VCE = 10 V, VGE = 0 V, f = 100 kHz
Tj = 25 °C
— 5.6 — nF
Qg Total gate charge VCC = 850 V, IC = 2400 A
VGE = ±15V, Tj = 25 °C — 24.5 — µC
Tj = 25 °C — 2.15 2.80
VCE(sat) Collector-emitter saturation voltage IC = 2400 A (Note 4)
VGE = 15 V Tj = 125 °C — 2.40 — V
td(on) Turn-on delay time — — 1.50 µs
tr Turn-on rise time — — 0.70 µs
Eon(10%) Turn-on switching energy (Note 5)
VCC = 850 V, IC = 2400 A
VGE = ±15 V, RG(on) = 0.7 Ω
Tj = 125 °C, Ls = 100 nH
Inductive load — 0.64 — J/P
td(off) Turn-off delay time — — 3.00 µs
tf Turn-off fall time — — 0.60 µs
Eoff(10%) Turn-off switching energy (Note 5)
VCC = 850 V, IC = 2400 A
VGE = ±15 V, RG(off) = 1.6 Ω
Tj = 125 °C, Ls = 100 nH
Inductive load — 0.84 — J/P
Tj = 25 °C — 2.60 3.30
VEC Emitter-collector voltage (Note 2) IE = 2400 A (Note 4)
VGE = 0 V Tj = 125 °C — 2.30 — V
trr Reverse recovery time (Note 2) — — 1.50 µs
Qrr Reverse recovery charge (Note 2) — 620 — µC
Erec (10%) Reverse recovery energy (Note 2),(Note 5)
VCC = 850 V, IE = 2400 A
VGE = ±15 V, RG(on) = 0.7 Ω
Tj = 125 °C, Ls = 100 nH
Inductive load — 0.38 — J/P
CONFIDENTIAL MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1035-C 3 of 7
THERMAL CHARACTERISTICS
Limits
Symbol Item Conditions
Min Typ Max
Unit
Rth(j-c)Q Thermal resistance Junction to Case, IGBT part — — 9.5 K/kW
Rth(j-c)R Thermal resistance Junction to Case, FWDi part — — 21.0 K/kW
Rth(c-f) Contact thermal resistance
Case to Fin,
λ
grease
= 1W/m·K, D
(c-f)
= 100 µm
— 8.0 — K/kW
MECHANICAL CHARACTERISTICS
Limits
Symbol Item Conditions
Min Typ Max
Unit
Mt M8: Main terminals screw 7.0 — 20.0 N·m
Ms M6: Mounting screw 3.0 — 6.0 N·m
Mt
Mounting torque
M4: Auxiliary terminals screw 1.0 — 3.0 N·m
m Mass — 0.8 — kg
CTI Comparative tracking index 600 — — —
da Clearance 19.5 — — mm
dS Creepage distance 32.0 — — mm
LP CE Parasitic stray inductance — 16 — nH
RCC’+EE’ Internal lead resistance Tc = 25 °C — 0.14 — mΩ
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
Note 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
Note 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
Note 4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Note 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
CONFIDENTIAL MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1035-C 4 of 7
PERFORMANCE CURVES
TRANSFER CHARACTERISTICS OUTPUT CHARACTERISTICS
(TYPICAL) (TYPICAL)
0
1000
2000
3000
4000
5000
0123456
Collector - Emitter Voltage [V]
Collector Current [A]
VGE = 8V
Tj = 125°C
VGE = 20V
VGE = 15V
VGE = 10V
VGE = 12V
0
1000
2000
3000
4000
5000
0 5 10 15
Gate - Em itter Voltage [V]
Collector Current [A]
Tj = 125°C
Tj = 25°C
VCE
= 20V
COLLECTOR-EMITTER SATURATION VOLTAGE FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL) CHARACTERISTICS (TYPICAL)
0
1000
2000
3000
4000
5000
01234
Collector-Emitter Saturation Voltage [V]
Collector Current [A]
Tj = 25°C
VGE = 15V
Tj = 125°C
0
1000
2000
3000
4000
5000
01234
Emitter-Collector Voltage [V]
Emitter Current [A]
Tj = 125°C
Tj = 25°C
CONFIDENTIAL MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1035-C 5 of 7
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
1
10
100
1000
10000
0.1 1 10 100
Collector-Emitter Voltage [V]
Capacitance [nF]
Cies
VGE = 0V, Tj = 25°C
f = 100kHz
Coes
Cres
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
0
0.5
1
1.5
2
2.5
3
0 1000 2000 3000 4000 5000
Collector Current [A]
Switching Energies [J/P]
Erec
VCC = 850V, VGE = ±15V
RG(on) = 0.7 Ω, RG(off) = 1.6 Ω
Tj = 125°C , Inductive load
Eoff
Eon
GATE CHARGE CHARACTERISTICS
(TYPICAL)
-15
-10
-5
0
5
10
15
20
0102030
Gate Charge [µC]
Gate-Emitter Voltage [V]
40
VCE
= 850V, IC = 2400A
Tj = 25°C
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
0
1
2
3
4
5
024681012
Gate Resistance [Ω]
Switching Energies [J/P]
Erec
VCC = 850V, IC = 2400A
VGE = ±15V, Tj = 125°C
Inductive load
Eoff
Eon
CONFIDENTIAL MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1035-C 6 of 7
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
0.01
0.1
1
10
100 1000 10000
Collector Current [A]
Switching Times [µs]
tf
VCC = 850V, VGE = ±15V
RG(on) = 0.7 Ω, RG(off) = 1.6 Ω
Tj = 125°C, Inductive load
tr
td( on)
td(off)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
0
0.2
0.4
0.6
0.8
1
1.2
0.001 0.01 0.1 1 10
Tim e [s]
Normalized Transient Thermal impedance
Rth(j-c)Q = 9.5 K/kW
Rth(j-c)R = 21.0 K/kW
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
0
1
10
100
100 1000 10000
Emitter Current [A]
Reverse Recovery Time [µs]
10
100
1000
10000
Reverse Recovery Current [A]
trr
VCC = 850V, VGE = ±15V
RG(on) = 0.7 Ω
Tj = 125°C, Inductive load
Irr
CONFIDENTIAL MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1035-C 7 of 7
PERFORMANCE CURVES
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
0
1000
2000
3000
4000
5000
6000
0 500 1000 1500 2000
Collector-Emitter Voltage [V]
Collector Current [A]
VCC ≤ 1200V, VGE = ±15V
Tj = 125°C , RG(off) ≥ 1.6 Ω
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
0
500
1000
1500
2000
2500
3000
0 500 1000 1500 2000
Collector-Emitter Voltage [V]
Reverse Recovery Current [A]
VCC ≤ 1200V, di/dt ≤ 4700A/µs
Tj = 125°C
SHORT CIRCUIT SAFE OPERATING AREA
(SCSOA)
0
5000
10000
15000
20000
25000
0 500 1000 1500 2000
Collector-Emitter Voltage [V]
Collector Current [A]
VCC ≤ 1200V, VGE = ±15V
RG(on) ≥ 0.7Ω, RG(off) ≥ 1.6Ω
Tj = 125°C , tpsc ≤ 10µs
