DIODE MODULE Spec.No.SR2-SP-09003 R1 MDM750H65E2 P1 TENTATIVE Datasheet FEATURES Low noise recovery: Ultra soft fast recovery diode. High reverse recovery capability: Super HiRC Structure. High reliability, high durability diodes. Isolated heat sink (terminal to base). CIRCUIT DIAGRAM C(K) C(K) E(A) E(A) ABSOLUTE MAXIMUM RATINGS (TC=25 ) Item Symbol Unit MDM750H65E2 Repetitive Peak Reverse Voltage DC Forward Current 1ms Junction Temperature Storage Temperature Terminals-base lsolation Test Voltage Terminal 1-Terminal 2 Screw Torque Terminals (M8) Mounting (M6) VRRM IF IFM Tj Tstg VISO VISO T-T - V 6,500 750 1500 -40 +125 -40 +125 10,200 (AC 1 minute) 10,200 (AC 1 minute) 10 6 Notes: (1) Recommended Value 91N*m Forward Voltage Drop Reverse Recovery Time Reverse Recovery Loss VRMS N*m (1) (2) (2) Recommended Value 5.50.5N*m ELECTRICAL CHARECTERISTICS Item Symbol Unit Repetitive Reverse Current A IRRM mA VF V trr Err(10%) Err(full) s J/P J/P PACKAGE CHARECTERISTICS Item Symbol Unit Min. Typ. Max. - 10 3.6 3.9 0.8 2.2 2.4 tbd tbd tbd tbd - Min. Typ. Max. Terminal Resistance Terminal Stray Inductance Thermal Impedance Comparative tracking index RCE LsCE Rth(j-c) CTI m nH K/W - 0.3 36 600 Contact Thermal Impedance Rth(c-f) K/W - 0.007 Test Conditions VAK=6,500V, Tj=125 IF=750A, Tj=25 , at chip level IF=750A, Tj=125 , at chip level VCC=3,600V, Ic=750A, L=200nH o Tj=125 C Rg=8.2 (3) Test Conditions per arm per arm 0.017 Junction to case - Case to fin (grease=1W/(mK), Heat-sink flatness 50um) Notes:(3) Counter arm; MBN750H65E2 VGE=+/-15V RG value is the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. http://store.iiic.cc/ DIODE MODULE Spec.No.SR2-SP-09003 R1 MDM750H65E2 TENTATIVE Datasheet Ls DUT LLOAD Vcc Rg G/D MBN750H65E2 Fig.1 Switching test circuit Ic Vce P2 Ls= VL t 0 VL dIc d t=tL ( ) tL Fig.2 Definition of stray inductance Vce 0.1Vce Irm 0.5Irm 0.1IF 0 t trr IF -Ic t3 t1 t2 t4 t2 Err(10%)= IFVce dt t1 t4 Err(Full)= IFVce dt t3 Fig.3 Definition of switching loss http://store.iiic.cc/ DIODE MODULE Spec.No.SR2-SP-09003 R1 MDM750H65E2 P3 TENTATIVE Datasheet STATIC CHARACTERISTICS TYPICAL VGE=0V Tc=25 Tc=125 1400 Forward Current , IF (A) 1200 1000 800 600 400 200 0 0 1 2 3 4 5 Forward Voltage, VF(V) 6 7 (At chip level) DYNAMIC CHARACTERISTICS Target 3.0 Target 3.0 Err(Full) 2.5 Reverse Recovery Loss , Err (J/pulse) Reverse Recovery Loss , Err (J/pulse) 2.5 Err(10%) 2.0 1.5 Conditions VGE=15VRg(on)=8.2 Vcc=3600VL200nHTj=125 Inductive load 1.0 Vce 0.1Vce Irm 0.5Irm 0.1IF 0 Err(full) Err(10%) 2.0 1.5 Co nditions VGE=15VIF=750A Vcc=3600VL200nHTj=125 Inductive load 1.0 Vce 0.1Vce Irm 0.5Irm 0.1IF 0 t t -Ic -Ic t9 0.5 trr IF trr IF t11 t9 0.5 t12 t10 Err(10%)= Err(10%)= IF Vce dt t12 t10 IFVce dt t11 t10 t11 t10 Err(Full)= t11 t12 t12 Err(Full)= IFVce dt IFVce dt t9 t9 0.0 0.0 0 150 300 450 600 Forward Current , IF (A) 750 900 Recovery Loss vs. Forward Current http://store.iiic.cc/ 0 5 10 15 Gate Resistance , Rg ( ) 20 Recovery Loss vs. Gate Resistance 25 DIODE MODULE Spec.No.SR2-SP-09003 R1 MDM750H65E2 TENTATIVE Datasheet RecSOA Conditions: Ls 200nH, Vcc 4400V, - Ic 1500A, VGE=-15V, Rg(on) of across IGBT 8.2, 8.2 VGE of across IGBT =15V, o o -40 C Tc 125 C, Conduction pulse width of diode 30 s 1600 1400 1200 IF [A] 1000 800 600 400 200 0 0 1000 2000 3000 4000 5000 6000 7000 Anode - cathode voltage [V] (at chip level) RecSOA TRANSIENT THERMAL IMPEDANCE 1.0E-01 FWD IGBT Zth(j-c) [K/W] 1.0E-02 1.0E-03 1.0E-04 1.0E-03 P4 1.0E-02 1.0E-01 Time [s] http://store.iiic.cc/ 1.0E+00 1.0E+01 DIODE MODULE Spec.No.SR2-SP-09003 R1 MDM750H65E2 P5 TENTATIVE Datasheet 48.5 OUTLINE DRAWING Unit in mm Weight: 1050(g) Negative environmental impact material Please note the following negative environmental impact materials are contained in the product in order to keep product characteristic and reliability level. Material Contained part Lead (Pb) and its compounds Solder http://store.iiic.cc/ DIODE MODULE Spec.No.SR2-SP-09003 R1 MDM750H65E2 P6 TENTATIVE Datasheet HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. 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