DIODE MODULE
Spec.No.SR2-SP-09003 R1
P
1
MDM750H65E2
TENTATIVE Datasheet
FEATURES
∗ Low noise recovery: Ultra soft fast recovery diode.
∗ High reverse recovery capability:
Super HiRC Structure.
∗ High reliability, high durability diodes.
∗ Isolated heat sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS
(TC=25
℃
)
Item Symbol Unit MDM750H65E2
Repetitive Peak Reverse Voltage V
RRM
V 6,500
DC I
F
750
Forward Current 1ms I
FM
A 1500
Junction Temperature Tj
℃
-40
～
+125
Storage Temperature Tstg
℃
-40
～
+125
Terminals-base V
ISO
10,200 (AC 1 minute)
lsolation Test
Voltage Terminal 1-Terminal 2
V
ISO T-T
V
RMS
10,200 (AC 1 minute)
Terminals (M8) - 10 (1)
Screw Torque Mounting (M6) - N·m 6 (2)
Notes: (1) Recommended Value 9±1N·m (2) Recommended Value 5.5±0.5N·m
ELECTRICAL CHARECTERISTICS
Item Symbol
Unit
Min.
Typ.
Max.
Test Conditions
Repetitive Reverse Current I
RRM
mA - 10 tbd
VAK=6,500V, Tj=125
℃
- 3.6
- IF=750A, Tj=25
℃
, at chip level
Forward Voltage Drop V
F
V - 3.9
tbd
IF=750A, Tj=125
℃
, at chip level
Reverse Recovery Time trr µs - 0.8
tbd
E
rr(10%)
J/P - 2.2
tbd
Reverse Recovery Loss Err(full)
J/P - 2.4
-
V
CC
=3,600V, Ic=750A, L=200nH
Tj=125
o
C Rg=8.2
Ω
(3)
PACKAGE CHARECTERISTICS
Item Symbol
Unit
Min.
Typ.
Max.
Test Conditions
Terminal Resistance R
CE
m
Ω
- 0.3
- per arm
Terminal Stray Inductance Ls
CE
nH - 36 - per arm
Thermal Impedance Rth(j-c)
K/W
- - 0.017
Junction to case
Comparative tracking index CTI - 600
-
Contact Thermal Impedance
Rth(c-f)
K/W
- 0.007
-
Case to fin (λgrease=1W/(m
･
K),
Heat-sink flatness ≤50um)
Notes:(3) Counter arm; MBN750H65E2 VGE=+/-15V
R
G
value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable R
G
value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
CIRCUIT DIAGRAM
C(K)
E(A)
C(K)
E(A)
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DIODE MODULE
Spec.No.SR2-SP-09003 R1
P
2
MDM750H65E2
TENTATIVE Datasheet
MBN750H65E2
Vcc
Ls
L
LOAD
DUT
Rg
G/D
Fig.2 Definition of stray inductance
Fig.3 Definition of switching loss
Ic
t
0
VL
tL
Vce
t=t
L
Ls=
V
L
dIc
d
ｔ
(
)
Fig.1 Switching test circuit
0.1IF
t3
t4
Vce
0.1Vce
0.5Irm
Irm
-Ic
trr
t2
t1
t
0
IF
t2
t1
Err(10%)=
∫
IF
･
Vce dt
Err(Full)=
∫
IF
･
Vce dt
t4
t3
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DIODE MODULE
Spec.No.SR2-SP-09003 R1
P
3
MDM750H65E2
TENTATIVE Datasheet
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
0
200
400
600
800
1000
1200
1400
0 1 2 3 4 5 6 7
Forward Voltage, VF(V)
Forward Current , IF (A)
TYPICAL
VGE=0V
Tc=25
℃
℃℃
℃
Tc=125
℃
℃℃
℃
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 150 300 450 600 750 900
Forward Current , IF (A)
Reverse Recovery Loss , Err (J/pulse)
Err(Full)
Err(10%)
Target
Recovery Loss vs. Forward Current
【
【 【
【Conditions
ConditionsConditions
Conditions】
】】
】
VGE=±15V、Rg(on)=8.2Ω
Vcc=3600V、L≒200nH、Tj=125℃
Inductive load
t12
t11
Err(10%)=
∫
IF
･
Vce dt
Err(Full)=
∫
IF
･
Vce dt
t10
t9
0.1IF
t9 t10
Vce
0.1Vce
0.5Irm
Irm
-Ic
trr
t12
t11
t
0
IF
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 5 10 15 20 25
Gate Resistance , Rg (
Ω
ΩΩ
Ω
)
Reverse Recovery Loss , Err (J/pulse)
Err(10%) Err(full)
Recovery Loss vs. Gate Resistance
Target
【
【 【
【Conditions
ConditionsConditions
Conditions】
】】
】
VGE=±15V、IF=750A
Vcc=3600V、L≒200nH、Tj=125℃
Inductive load
t12
t11
Err(10%)=
∫
IF
･
Vce dt
Err(Full)=
∫
IF
･
Vce dt
t10
t9
0.1IF
t9
t10
Vce
0.1Vce
0.5Irm
Irm
-Ic
trr
t12
t11
t
0
IF
(At chip level)
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DIODE MODULE
Spec.No.SR2-SP-09003 R1
P
4
MDM750H65E2
TENTATIVE Datasheet
RecSOA
TRANSIENT THERMAL IMPEDANCE
IGBT
FWD
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01
Time
[s]
Zth(j-c)
[K/W]
RecSOA
0
200
400
600
800
1000
1200
1400
1600
0 1000 2000 3000 4000 5000 6000 7000
Anode - cathode voltage [V] (at chip level)
IF [A]
Conditions:
Ls≤
≤≤
≤200nH, Vcc≤
≤≤
≤4400V, - Ic≤
≤≤
≤1500A, VGE=-15V,
Rg(on) of across IGBT ≥8.2Ω
≥8.2Ω ≥8.2Ω
≥8.2Ω, VGE of across IGBT =±15V,
-40
o
C≤
≤≤
≤Tc≤
≤≤
≤125
o
C, Conduction pulse width of diode ≥
≥≥
≥30µ
µµ
µs
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DIODE MODULE
Spec.No.SR2-SP-09003 R1
P
5
MDM750H65E2
TENTATIVE Datasheet
OUTLINE DRAWING
Unit in mm Weight: 1050(g)
Negative environmental impact material
Please note the following negative environmental impact materials are contained in the
product in order to keep product characteristic and reliability level.
Material Contained part
Lead (Pb) and its compounds Solder
48.5
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DIODE MODULE
Spec.No.SR2-SP-09003 R1
P
6
MDM750H65E2
TENTATIVE Datasheet
HITACHI POWER SEMICONDUCTORS
For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address http://www.hitachi.co.jp/products/power/pse/
Notices
NoticesNotices
Notices
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3. In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5. In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8. The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
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