SFH615AA/AGB/AGR 5.3 kV TRIOS Optocoupler High Reliability FEATURES * High Current Transfer Ratios - at 5 mA: 50-600% - at 1 mA: 60% typical (>13) * Low CTR Degradation * Good CTR Linearity Depending on Forward Current * Isolation Test Voltage, 5300 VACRMS * High Collector-Emitter Voltage, VCEO=70 V * Low Saturation Voltage * Fast Switching Times * Field-Effect Stable by TRIOS (TRansparent IOn Shield) * Temperature Stable * Low Coupling Capacitance * End-Stackable, .100"(2.54 mm) Spacing * High Common-Mode Interference Immunity (Unconnected Base) * Underwriters Lab File #52744 * VDE 0884 Available with Option 1 * SMD Option - See SFH6106/16/56 Data Sheet Dimensions in inches (mm) 2 Pin One I.D. .268 (6.81) .255 (6.48) The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm spacing. Creepage and clearance distances of >8 mm are achieved with option 6. This version complies with IEC 950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Anode 1 4 Collector 3 Emitter Cathode 2 3 4 .190 (4.83) .179 (4.55) .305 (7.75) .045 (1.14) .030 (.76) .150 (3.81) .130 (3.30) .135 (3.43) .115 (2.92) 4 Typ. 10 Typ. .040 (1.02) .030 (.76 ) .022 (.56) .018 (.46) DESCRIPTION The SFH615AA/AGB/AGR features a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. 1 3-9 1.00 (2.54) Typ. .012 (.30) .008 (.20) Maximum Ratings Emitter Reverse Voltage...................................................................................... 6 V DC Forward Current........................................................................... 60 mA Surge Forward Current (tP10 s) ....................................................... 2.5 A Total Power Dissipation................................................................... 100 mW Detector Collector-Emitter Voltage ..................................................................... 70 V Emitter-Collector Voltage ........................................................................ 7 V Collector Current................................................................................ 50 mA Collector Current (tP1 ms).............................................................. 100 mA Total Power Dissipation................................................................... 150 mW Package Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, part 2, Nov. 74.................................................................... 5300 VACRMS Creepage ...........................................................................................7 mm Clearance ..........................................................................................7 mm Insulation Thickness between Emitter and Detector ...................... 0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0 303, part 1....................................................175 Isolation Resistance VIO=500 V, TA=25C .....................................................................1012 VIO=500 V, TA=100C ...................................................................1011 Storage Temperature Range................................................. -55 to +150C Ambient Temperature Range ................................................ -55 to +100C Junction Temperature .........................................................................100C Soldering Temperature (max. 10 s. Dip Soldering Distance to Seating Plane 1.5 mm)...............................................260C 1 Characteristics (TA=25C) Description Symbol Unit Condition Emitter (IR GaAs) Forward Voltage VF 1.25 (1.65) V IF=60 mA Reverse Current IR 0.01 (10) A VR=6 V Capacitance C0 13 pF VR=0 V, f=1 MHz Thermal Resistance RthJA 750 K/W Capacitance CCE 5.2 pF Thermal Resistance RthJA 500 K/W Collector-Emitter Saturation Voltage VCESAT 0.25 (0.4) V Coupling Capacitance CC 0.4 pF Detector (Si Phototransistor) VCE=5 V, f=1 MHz Package IF=10 mA, IC=2.5 mA Current Transfer Ratio (IC/IF at VCE=5 V) and Collector-Emitter Leakage Current Description AA AGB AGR IC/ IF (IF=5 mA) 50-600 100-600 100-300 % Collector-Emitter Leakage Current, ICEO VCE=10 V 10 (100) 10 (100) 10 (100) nA Switching Operation (with saturation) IF=5 mA 1.9 K VCC=5 V IF=5 mA Turn-on Time tON 2.0 s Turn-off Time tOFF 25 s 47 SFH615AA/AGB/AGR 2 Figure 1. Current transfer ratio (typ.) vs. temperature IF=10 mA, VCE=0.5 V Figure 2. Output characteristics (typ.) Collector current vs. collector-emitter voltage TA=25C Figure 3. Diode forward voltage (typ.) vs. forward current Figure 4. Transistor capacitance (typ.) vs. collector-emitter voltage TA=25C, f=1 MHz Figure 5. Permissiable pulse handling capability. Fwd. current vs. pulse width Pulse cycle D=parameter, TA=25C Figure 6. Permissible power dissipation vs. ambient temp. 20 pF C 15 10 5 CCE 0 10-2 10-1 10-0 101 V Ve 102 Figure 7. Permissible diode forward current vs. ambient temp. SFH615AA/AGB/AGR 3