1
FEATURES
• High Current Transfer Ratios
– at 5 mA: 50–600%
– at 1 mA: 60% typical (>13)
• Low CTR Degradation
• Good CTR Linearity Depending on Forward
Current
• Isolation Test Voltage, 5300 VACRMS
• High Collector-Emitter Voltage, VCEO=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS (TRansparent
IOn Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100"(2.54 mm) Spacing
• High Common-Mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
• VDE 0884 Available with Option 1
• SMD Option – See SFH6106/16/56 Data Sheet
DESCRIPTION
The SFH615AA/AGB/AGR features a high current
transfer ratio, low coupling capacitance and high
isolation voltage. These couplers have a GaAs
infrared emitting diode emitter, which is optically
coupled to a silicon planar phototransistor detec-
tor, and is incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal
transmission between two electrically separated
circuits.
The couplers are end-stackable with 2.54 mm
spacing.
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with
IEC 950 (DIN VDE 0805) for reinforced insulation
up to an operation voltage of 400 V
RMS
or DC.
Maximum Ratings
Emitter
Reverse Voltage...................................................................................... 6 V
DC Forward Current...........................................................................60 mA
Surge Forward Current (t
P
≤
10
µ
s).......................................................2.5 A
Total Power Dissipation................................................................... 100 mW
Detector
Collector-Emitter Voltage ..................................................................... 70 V
Emitter-Collector Voltage ........................................................................ 7 V
Collector Current................................................................................50 mA
Collector Current (t
P
≤
1 ms).............................................................. 100 mA
Total Power Dissipation................................................................... 150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74....................................................................5300 VAC
RMS
Creepage...........................................................................................
≥
7 mm
Clearance ..........................................................................................
≥
7 mm
Insulation Thickness between Emitter and Detector ......................
≥
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1....................................................
≥
175
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C.....................................................................
≥
10
12
Ω
V
IO
=500 V, T
A
=100
°
C...................................................................
≥
10
11
Ω
Storage Temperature Range................................................. –55 to +150
°
C
Ambient Temperature Range................................................ –55 to +100
°
C
Junction Temperature .........................................................................100
°
C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
≥
1.5 mm)...............................................260
°
C
.268 (6.81)
.255 (6.48)
12
43
.190 (4.83)
.179 (4.55)
Pin One I.D.
.045 (1.14)
.030 (.76)
4°
Typ.
1.00 (2.54)
Typ.
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 ) 10°
Typ.
3°–9°
.305
(7.75)
.022 (.56)
.018 (.46) .012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
1
2
4
3
Collector
Emitter
Anode
Cathode
Dimensions in inches (mm)
SFH615AA/AGB/AGR
5.3 kV TRIOS
Optocoupler
High Reliability
2
SFH615AA/AGB/AGR
Characteristics
(T
A
=25
°
C)
Current T ransfer Ratio
(I
C
/I
F
at V
CE
=5 V)
and Collector-Emitter Leakage Current
Switching Operation
(with saturation)
Description Symbol Unit Condition
Emitter (IR GaAs)
Forward Voltage V
F
1.25 (
≤
1.65) V I
F
=60 mA
Reverse Current I
R
0.01 (
≤
10)
µ
AV
R
=6 V
Capacitance C
0
13 pF V
R
=0 V, f=1 MHz
Thermal Resistance R
thJA
750 K/W
Detector (Si Phototransistor)
Capacitance C
CE
5.2 pF V
CE
=5 V, f=1 MHz
Thermal Resistance R
thJA
500 K/W
Package
Collector-Emitter Saturation Voltage V
CESAT
0.25 (
≤
0.4) V I
F
=10 mA, I
C
=2.5 mA
Coupling Capacitance C
C
0.4 pF
Description AA AGB AGR
I
C
/ I
F
(I
F
=5 mA) 50–600 100–600 100–300 %
Collector-Emitter Leakage Current, I
CEO
V
CE
=10 V 10 (
≤
100) 10 (
≤
100) 10 (
≤
100) nA
IF=5 mA 1.9 KΩVCC=5 V
47 Ω
I
F
=5 mA
Turn-on Time t
ON
2.0
µ
s
Turn-off Time t
OFF
25
µ
s
3
SFH615AA/AGB/AGR
Figure 1. Current transfer ratio (typ.) Figure 2. Output characteristics (typ.) Figure 3. Diode forward voltage
vs. temperature Collector current vs. collector-emitter (typ.) vs. forward current
I
F
=10 mA, V
CE
=0.5 V
v oltage
T
A
=25
°
C
Figure 4. Transistor capacitance Figure 5. Permissiable pulse handling Figure 6. Permissible power
(typ.) vs. collector-emitter voltage capability. Fwd. current vs. pulse dissipation vs. ambient temp.
T
A
=25
°
C, f=1 MHz
width
Pulse cycle D=parameter, T
A
=25
°
C
Figure 7. Permissible diode
forward current vs. ambient temp.
20
15
10
0
5
pF
C
10-2 10-1 10-0 101102
V
Ve
CCE