© Semiconductor Components Industries, LLC, 2012
June, 2012 − Rev. 11
1Publication Order Number:
MMBT5401LT1/D
MMBT5401LT1G,
SMMBT5401LT1G,
MMBT5401LT3G
High Voltage Transistor
PNP Silicon
Features
•AEC−Q101 Qualified and PPAP Capable
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −150 Vdc
Collector−Base Voltage VCBO −160 Vdc
Emitter−Base Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC−500 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate Above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA 556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate Above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
Device Package Shipping†
ORDERING INFORMATION
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
MMBT5401LT3G SOT−23
(Pb−Free)
10,000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBT5401LT1G SOT−23
(Pb−Free)
3,000 Tape & Reel
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2L M G
G
2L = Specific Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
SMMBT5401LT1G SOT−23
(Pb−Free)
3,000 Tape & Reel
MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−150 −
Vdc
Collector−Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
−160 −
Vdc
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
−5.0 −
Vdc
Collector−Base Cutoff Current
(VCB = −120 Vdc, IE = 0)
(VCB = −120 Vdc, IE = 0, TA = 100°C)
ICBO
−
−
−50
−50
nAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −1.0 mAdc, VCE = −5.0 Vdc)
(IC = −10 mAdc, VCE = −5.0 Vdc)
(IC = −50 mAdc, VCE = −5.0 Vdc)
hFE
50
60
50
−
240
−
−
Collector−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
−
−
−0.2
−0.5
Vdc
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat)
−
−
−1.0
−1.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz)
fT
100 300
MHz
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−6.0
pF
Small Signal Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hfe
40 200
−
Noise Figure
(IC = −200 mAdc, VCE = −5.0 Vdc, RS = 10 W, f = 1.0 kHz)
NF
−8.0
dB
MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G
http://onsemi.com
3
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
30
100
150
200
0.1
h , CURRENT GAIN
0.5 2.0 3.0 100.2 0.3
20
1.0 5.0
FE
TJ = 125°C
25°C
-55°C
70
50
20 30 50 100
VCE = - 1.0 V
VCE = - 5.0 V
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
0.1 0.5 2.0 100.2 1.0 5.0 20 50
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05
Figure 3. Collector Cut−Off Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
, COLLECTOR CURRENT (A)μIC
103
0.10.3 0.2
102
101
100
10-1
10-2
10-3
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
IC = 1.0 mA 10 mA 30 mA 100 mA
VCE = 30 V
IC = ICES
TJ = 125°C
75°C
25°C
REVERSE FORWARD
MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G
http://onsemi.com
4
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0
0.03
0.05
0.08
0.10
0.15
0.18
0.20
0.10.010.0010.0001
0.2
0.3
0.4
0.5
0.7
0.8
0.9
1.0
Figure 6. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
0.13
IC/IB = 10
150°C
−55°C
25°C0.6
IC/IB = 10
150°C
−55°C
25°C
0.4
0.9
VCE = 10 V
150°C
−55°C
25°C
Figure 7. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
2.5
C, CAPACITANCE (pF)
100
TJ = 25°C
Cibo
Figure 8. Switching Time Test Circuit
VR, REVERSE VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENT (mV/ C)°θ
Figure 9. Capacitances
10.2 V
Vin
10 ms
INPUT PULSE
VBB
+8.8 V
100
RB
5.1 k
0.25 mF
Vin 100 1N914
Vout
RC
VCC
-30 V
3.0 k
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
Values Shown are for IC @ 10 mA
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 1000.3 3.0 30
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
TJ = - 55°C to 135°C
qVC for VCE(sat)
qVB for VBE(sat)
Cobo
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
0.2 0.5 1.0 2.0 5.0 10 200.3 3.0
0.7 7.0
MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G
http://onsemi.com
5
t, TIME (ns)
1000
100
200
300
500
700
10
20
30
50
70
0.2 0.5 1.0 2.0 5.0 10 200.3 3.0 30 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 10. Turn−On Time
IC/IB = 10
TJ = 25°C
td @ VBE(off) = 1.0 V
VCC = 120 V
tr @ VCC = 30 V
tr @ VCC = 120 V
t, TIME (ns)
2000
100
200
300
500
700
20
30
50
70
0.2 0.5 1.0 2.0 5.0 10 200.3 3.0 30 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 11. Turn−Off Time
1000 tf @ VCC = 120 V
tf @ VCC = 30 V
ts @ VCC = 120 V
IC/IB = 10
TJ = 25°C
Figure 12. Current Gain Bandwidth Product Figure 13. Safe Operating Area
IC, COLLECTOR CURRENT (A) VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
10
100
1000
1000100101
0.001
0.01
0.1
1
fT
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
IC, COLLECTOR CURRENT (A)
VCE = 1 V
TA = 25°C
1 Sec
10 mSec
MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G
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6
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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