BSS84AK,215 - NXP Semiconductors

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) p lastic package using Trench MOSFET

technology.

1.2 Features and benefits

Logic-level compatible

Very fast switching

Trench MOSFET technology

ESD protection up to 1 kV

AEC-Q101 qualified

1.3 Applications

Relay driver

High-speed line driver

High-side loadswitch

Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

BSS84AK

50 V, 180 mA P-channel Trench MOSFET

Rev. 1 — 23 May 2011 Product data sheet

SOT23

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj=25°C ---50V

VGS gate-source voltage -20 - 20 V

IDdrain current VGS =-10V; T

amb =25°C [1] ---180mA

Static chara cteristics

RDSon drain-source on-state

resistance VGS =-10V; I

D=-100mA;

Tj=25°C -4.57.5Ω

Product data sheet Rev. 1 — 23 May 2011 2 of 16

NXP Semiconductors BSS84AK

50 V, 180 mA P-channel Tre nch MO SF ET

2. Pinning information

3. Ordering information

4. Marking

[1] % = placeholder for manufacturing site code

Table 2. Pinning info rmation

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

SOT23 (T O-236AB)

2Ssource

3 D drain

sym146

Table 3. Orderi ng information

Type number Package

Name Description Version

BSS84AK TO-236AB plastic surface-mounted package; 3 leads SOT23

Table 4. Marking codes

Type number Marking code[1]

BSS84AK %VS

Product data sheet Rev. 1 — 23 May 2011 3 of 16

NXP Semiconductors BSS84AK

50 V, 180 mA P-channel Tre nch MO SF ET

5. Limiting values

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[3] Measured between all pins.

Table 5. Limiting values

In accordance with the Absolute Maxi mum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj=25°C - -50 V

VGS gate-source voltage -20 20 V

IDdrain current VGS =-10V; T

amb =25°C [1] - -180 mA

VGS =-10V; T

amb = 100 °C [1] - -120 mA

IDM peak drain current Tamb = 25 °C; single pulse; tp≤10 µs - -0.7 A

Ptot total power dissipation Tamb =25°C [2] - 350 mW

[1] - 420 mW

Tsp =25°C - 1140 mW

Tjjunction temperature -55 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Source-drain diode

ISsource current Tamb =25°C [1] - -180 mA

ESD maximum rating

VESD electrostatic discharge voltage HBM [3] - 1000 V

Fig 1. Normalized total power dissipation as a

function of junctio n temp erat u re Fig 2. Normalized continuous drain current as a

function of junction temp erat ure

Tj (°C)

-75 17512525 75-25

001aao121

120

Pder

(%)

Tj (°C)

-75 17512525 75-25

001aao122

120

Ider

(%)

Product data sheet Rev. 1 — 23 May 2011 4 of 16

NXP Semiconductors BSS84AK

50 V, 180 mA P-channel Tre nch MO SF ET

IDM is single pulse

(1) tp = 1 ms

(2) tp = 10 ms

(3) tp = 100 ms

(4) DC; Tsp = 25 °C

(5) DC; Tamb = 25 °C; drain mountin g pad 1 cm2

Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source

voltage

001aao123

VDS (V)

-10-1 -102

-10-1

-10-2

-1

(A)

-10-3

(1)

(2)

(3)

(4)

(5)

Product data sheet Rev. 1 — 23 May 2011 5 of 16

NXP Semiconductors BSS84AK

50 V, 180 mA P-channel Tre nch MO SF ET

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from junction to ambient in free air [1] - 310 370 K/W

[2] - 260 300 K/W

Rth(j-sp) thermal resistance from junction to solder poi nt - - 115 K/W

FR4 PCB, standard footprint

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, mounting pad for drain 1 cm2

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

017aaa015

(s)

−3

10110

−2

−1

th(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33

0.25 0.2

0.1 0.05

0.02

0.01

017aaa016

(s)

−3

10110

−2

−1

th(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33

0.25 0.2

0.1 0.05

0.02

0.01

Product data sheet Rev. 1 — 23 May 2011 6 of 16

NXP Semiconductors BSS84AK

50 V, 180 mA P-channel Tre nch MO SF ET

7. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source breakdown

voltage ID= -10 µA; VGS =0V; T

j=25°C -50--V

VGSth gate-source threshold voltage ID= -250 µA; VDS =V

GS; Tj= 25 °C -1.1 -1.6 -2.1 V

IDSS drain leakage current VDS =-50V; V

GS =0V; T

j=25°C ---1µA

VDS =-50V; V

GS =0V; T

j= 150 °C - - -2 µA

IGSS gate leakage current VGS =-20V; V

DS =0V; T

j= 25 °C - - -10 µA

VGS =20V; V

DS =0V; T

j= 25 °C - - -10 µA

RDSon drain-source on-state

resistance VGS =-10V; I

D= -100 mA; Tj=25°C - 4.5 7.5 Ω

VGS =-10V; I

D= -100 mA; Tj= 150 °C - 8 13.5 Ω

VGS =-5V; I

D=-100mA; T

j=25°C - 5.7 8.5 Ω

gfs forward transconductance VDS =-10V; I

D=-100mA; T

j= 25 °C - 150 - mS

Dynamic character i stics

QG(tot) total gate charge VDS =-25V; I

D=-200mA; V

GS =-5V;

Tj=25°C - 0.26 0.35 nC

QGS gate-source charge - 0.12 - nC

QGD gate-drain charge - 0.09 - nC

Ciss input capacitance VDS = -25 V; f = 1 MHz; VGS =0V;

Tj=25°C - 2436pF

Coss output capacitance - 4.5 - pF

Crss reverse transfer capacitance - 1.3 - pF

td(on) turn-on delay time VDS =-30V; R

L=250Ω; VGS =-10V;

RG(ext) =6Ω; Tj=25°C - 1326ns

trrise time - 11 - ns

td(off) turn-off delay time - 48 96 ns

tffall time - 25 - ns

Source-drain diode

VSD source-drain voltage IS=-115mA; V

GS =0V; T

j= 25 °C -0.48 -0.85 -1.2 V

Product data sheet Rev. 1 — 23 May 2011 7 of 16

NXP Semiconductors BSS84AK

50 V, 180 mA P-channel Tre nch MO SF ET

Tj = 25 °C Tj = 25 °C; VDS = -5 V

(1) minimum values

(2) typical values

(3) maximum values

Fig 6. Outp ut characteristics; drain current as a

function of drain-source volta ge; typ ical values Fig 7. Sub-threshold drain current as a function of

gate-source voltage

Tj = 25 °C

(1) VGS = -3.0 V

(2) VGS = -3.5 V

(3) VGS = -4.0 V

(4) VGS = -5.0 V

(5) VGS = -10.0 V

ID = -200 mA

(1) Tj = 150 °C

(2) Tj = 25 °C

Fig 8. Drain-source on-state resistance as a function

of drain current; typical values Fig 9. Dr ain-source on-state resistance as a function

of gate-source voltage; typical value s

VDS (V)

0-4-3-1 -2

001aao124

-0.10

-0.05

-0.15

-0.20

(A)

-3.5 V

-3.0 V

-2.5 V

VGS = -10 V -4.0 V

001aao125

-10-4

-10-5

-10-3

(A)

-10-6

VGS (V)

0 -2.5-2.0-1.0 -1.5-0.5

(1) (2) (3)

ID (A)

0 -0.4-0.3-0.1 -0.2

001aao126

RDSon

(Ω)

(1) (2) (3)

(4)

(5)

VGS (V)

0 -10-8-4 -6-2

001aao127

RDSon

(Ω)

(1)

(2)

Product data sheet Rev. 1 — 23 May 2011 8 of 16

NXP Semiconductors BSS84AK

50 V, 180 mA P-channel Tre nch MO SF ET

VDS > ID x RDSon

(1) Tj = 25 °C

(2) Tj = 150 °C

Fig 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values Fig 11. Normalized drain-source on-state resistance as

a function of junctio n temperature; typical

values

ID = -0.25 mA; VDS = VGS

(1) maximum values

(2) typical values

(3) minimum values

f = 1 MHz, VGS = 0 V

(1) Ciss

(2) Coss

(3) Crss

Fig 12. Gate-source threshold voltage as a function of

junction temperature Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

VGS (V)

0-4-3-1 -2

001aao128

-0.10

-0.05

-0.15

-0.20

(A)

(1)

(2)

Tj (°C)

-60 180120060

001aao129

1.0

0.5

1.5

2.0

Tj (°C)

-60 180120060

001aao130

-1

-2

-3

VGS(th)

(V)

(1)

(2)

(3)

001aao131

VDS (V)

-10-1 -102

-10-1

102

(pF)

(1)

(2)

(3)

Product data sheet Rev. 1 — 23 May 2011 9 of 16

NXP Semiconductors BSS84AK

50 V, 180 mA P-channel Tre nch MO SF ET

ID = -0.2 A; VDS = -25 V; Tamb = 25 °C

Fig 14. Gate-source voltage as a function of gate

charge; typical values Fig 15. Gate charge waveform definitions

VGS = 0 V

(1) Tj = 150 °C

(2) Tj = 25 °C

Fig 16. Source current as a functio n of so urce-drain voltage; typical values

001aao132

QG (nC)

0 0.60.40.2

-4

-6

-2

-8

-10

VGS

(V)

003aaa508

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

VSD (V)

0 -1.2-0.8-0.4

001aao133

-0.1

-0.2

-0.3

(A)

(1) (2)

Product data sheet Rev. 1 — 23 May 2011 10 of 16

NXP Semiconductors BSS84AK

50 V, 180 mA P-channel Tre nch MO SF ET

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - St re ss te st qu alif ication for discrete semiconductors, and is

suitable for use in auto motive applications.

Fig 17. Duty cycle definition

006aaa812

duty cycle δ =

Product data sheet Rev. 1 — 23 May 2011 11 of 16

NXP Semiconductors BSS84AK

50 V, 180 mA P-channel Tre nch MO SF ET

9. Package outline

Fig 18. Package outline SOT23 (TO-236AB)

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2 0.95

1.9 2.5

2.1

0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

Product data sheet Rev. 1 — 23 May 2011 12 of 16

NXP Semiconductors BSS84AK

50 V, 180 mA P-channel Tre nch MO SF ET

10. Soldering

Fig 19. Reflow soldering footprint for SOT23 (TO-236AB)

Fig 20. Wave soldering footprint for SOT23 (TO-236AB)

solder lands

solder resist

occupied area

solder paste

sot023_

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Product data sheet Rev. 1 — 23 May 2011 13 of 16

NXP Semiconductors BSS84AK

50 V, 180 mA P-channel Tre nch MO SF ET

11. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BSS84AK v.1 20110523 Product data sheet - -

Product data sheet Rev. 1 — 23 May 2011 14 of 16

NXP Semiconductors BSS84AK

50 V, 180 mA P-channel Tre nch MO SF ET

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) described in this document may have changed since this docu ment was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modificat ions or additions.

NXP Semiconductors does not give any representati ons or warranties as to

the accuracy or completeness of informati on included herein and shall have

no liability for the consequences of use of such info rmation.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict wit h the short data sheet, th e

full data sheet shall pre va il.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this d ocument is be lieved to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incide ntal,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersed es an d r eplaces all inf ormation supplied pri or

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applicati ons or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo m er(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Document status [1] [2] Product status [3] Definition

Objective [short] data sheet Development This document contai ns data from the objective specification for product development.

Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 23 May 2011 15 of 16

NXP Semiconductors BSS84AK

50 V, 180 mA P-channel Tre nch MO SF ET

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document ma y be interpret ed or

construed as an of fer to se ll product s that is op en for accept ance or the grant ,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) d escribed herein may

be subject to export control regulat i ons. Export might require a prior

authorization from national authorities.

12.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIF ARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BSS84AK

50 V, 180 mA P-channel Tre nch MO SF ET

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 23 May 2011

Document identifier : BS S84AK

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . .5

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . .10

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . .10

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .11

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .13

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .14

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15

13 Contact information. . . . . . . . . . . . . . . . . . . . . .15